SSM2310 [SECOS]
N-Channel Enhancement Mode Power Mos.FET; N沟道增强模式电源Mos.FET
| 型号： | SSM2310 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM2310
3A, 60V,RDS(ON) 90m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-223
Description
The SSM2310 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SSM2310 is universally used for all commercial-
industrial surface mount applications.
Features
* Simple Drive Requirement
* Small Package Outline
Millimeter
Min. Max.
Millimeter
Min. Max.
13°TYP.
REF.
REF.
D
A
C
D
E
I
6.70
2.90
0.02
0°
7.30
3.10
0.10
10°
B
J
2.30 REF.
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
2 3 1 0
6.30
3.30
3.30
1.40
Date Code
0.60
0.25
0.80
0.35
G
H
G
D
S
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
Unit
V
60
±20
3.0
2.3
10
Gate-Source Voltage
VGS
V
A
Continuous Drain Current3, VGS @4.5V
ID@TA=25oC
3
oC
Continuous Drain Current, VGS @4.5V
ID@TA=70
A
A
Pulsed Drain Current1,2
IDM
oC
Total Power Dissipation
PD@TA=25
2.7
W
0.02
W/oC
oC
Linear Derating Factor
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
oC /W
Thermal Resistance Junction-ambient3
Rthj-a
Max.
45
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSM2310
3A, 60V,RDS(ON) 90m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
V
VGS=0V, ID=250uA
60
_
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Reference to 25oC, ID=1mA
V/oC
V
BVDS/ Tj
0.05
_
VGS(th)
1.0
_
VDS=VGS, ID=250uA
VGS= 20V
3.0
_
_
100
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
o
_
VDS=60V,VGS=0
C
Drain-Source Leakage Current (Tj=25 )
10
25
Drain-Source Leakage Current(Tj=70o
)
_
_
_
_
C
VDS=48V,VGS=0
VGS=10V, ID=3A
VGS=4.5V, ID=2A
90
Static Drain-Source On-Resistance
mΩ
RDS(ON)
_
_
_
120
Total Gate Charge2
10
_
Qg
6
ID=3A
_
_
VDS=48V
VGS= 4.5V
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Qgs
1.6
3
_
_
Qgd
Td(ON)
Tr
Turn-on Delay Time2
Rise Time
_
_
6
VDD=30V
ID=1A
_
_
_
5
VGS=10V
nS
_
Ω
RG=3.3
Td(Off)
Turn-off Delay Time
Fall Time
16
3
Ω
RD=30
_
_
_
_
T
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
780
_
Ciss
Coss
Crss
490
VGS=0V
VDS=25V
f=1.0MHz
pF
S
55
40
_
_
_
VDS=5V, ID=3A
Gfs
Forward Transconductance
Source-Drain Diode
Parameter
5
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
Forward On Voltage2
1.2
_
VSD
V
IS=1.2A, VGS=0V.
_
Trr
25
26
Reverse Recovery Time
Reverse Recovery Change
nS
nC
IS=3A, VGS=0V.
dl/dt=100A/us
_
_
Q
rr
Notes:
1.
2.
3.
Pulse width limited by Max. junction temperature.
≦
≦
Pulse width 300us, dutycycle 2%.
Surface mounted on 1 in2copper pad of FR4 board;120oC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSM2310
3A, 60V,RDS(ON) 90m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 6. Gate Threshold Voltage v.s.
Fig 5. Forward Characteristics of
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Reverse Diode
01-Jun-2002 Rev. A
Page 3 of 4
SSM2310
3A, 60V,RDS(ON) 90m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
120к/W
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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