2N6800LCC4 [SEME-LAB]

N–CHANNEL ENHANCEMENT MODE; N沟道增强模式

2N6800LCC4


型号：	2N6800LCC4
厂家：	SEME LAB
描述：	N–CHANNEL ENHANCEMENT MODE N沟道增强模式晶体晶体管脉冲
文件：	总2页 (文件大小：97K)
下载：	下载PDF数据表文档文件

2N6800TXV

Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 FAIRCHILD

2N6800U

N-CHANNEL MOSFET

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38 MICROSEMI

2N6801

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-39

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33 ETC

2N6802

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.5A I(D) | TO-39

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48 ETC

2N6802

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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52 ETC

2N6802

N-CHANNEL MOSFET

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11 MICROSEMI

2N6802

N–CHANNEL ENHANCEMENT

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52 SEME-LAB

2N6802

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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13 ETC

2N6802

POWER MOS FIELD-EFFECT TRANSISTORS

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13 NJSEMI

2N6802U

N-CHANNEL MOSFET

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15 MICROSEMI

2N6804

P-CHANNEL MOSFET

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307 MICROSEMI

2N6804

-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package

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482 ETC

2N6804_12

This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.

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77 MAS

2N6804E3

Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PIN

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1 MICROSEMI

2N6804PBF

Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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1 IRF

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