BUL76B [SEME-LAB]
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR; 高级分布式基站设计高电压高速NPN硅功率晶体管
| 型号： | BUL76B |
| 厂家： | 
SEME LAB |
| 描述： | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUL76B
SEME
LAB
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
MECHANICAL DATA
Dimensions in mm
10.2
4.5
HIGH SPEED NPN
1.3
SILICON POWER TRANSISTOR
3.6 Dia.
Designed for use in
electronic ballast applications
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
1
2 3
1.3
• HIGH CURRENT
• EFFICIENT POWER SWITCHING
0.85
0.5
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
2.54 2.54
TO-220
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
Collector – Base Voltage(I =0) 250V
E
case
V
V
V
CBO
CEO
EBO
Collector – Emitter Voltage (I = 0)
100V
10V
B
Emitter – Base Voltage (I = 0)
C
I
I
Continuous Collector Current
Base Current
70A
C
14A
B
P
Total Dissipation at T
= 25°C
85W
tot
case
Tj
Junction Temperature
Operating and Storage Temperature Range
150°C
–55 to +150°C
T
stg
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
BUL76B
SEME
LAB
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ELECTRICAL CHARACTERISTICS
V
V
V
Collector – Emitter Sustaining Voltage I = 100mA
100
250
10
CEO(sus)
(BR)CBO
(BR)EBO
C
Collector – Base Breakdown Voltage I = 1mA
V
C
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I = 1mA
E
V
= 240V
10
µA
CB
I
I
I
CBO
CEO
EBO
T = 125°C
100
C
V
V
= 90V
= 9V
100
10
µA
µA
CE
EB
T = 125°C
100
90
C
I = 1A
V
V
V
V
= 1V
= 1V
= 5V
= 5V
45
25
50
40
C
CE
CE
CE
CE
I = 15A
60
C
h
DC Current Gain
—
FE*
I = 10A
80
C
I = 18A
70
C
I = 10A
I = 1A
0.5
0.8
0.7
1.2
1.5
C
B
V
V
Collector – Emitter Saturation Voltage I = 20A
I = 2A
V
V
CE(sat)*
BE(sat)*
C
B
I = 20A
I = 4A
B
C
I = 10A
I = 1A
B
C
Base – Emitter Saturation Voltage
I = 20A
I = 2A
B
C
DYNAMIC CHARACTERISTICS
Transition Frequency
f
I = 0.2A
V = 4V
CE
20
MHz
pF
t
C
C
Output Capacitance
V
= 10V
CB
f = 1MHz
200
ob
* Pulse test t = 300µs , δ < 2%
p
Prelim. 2/97
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
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