SML20J175 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
| 型号： | SML20J175 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SML20J122
SOT–227 Package Outline.
Dimensions in mm (inches)
1 1.8 (0 .4 6 3 )
1 2.2 (0 .4 8 0 )
31 .5 (1 .2 4 0)
31 .7 (1 .2 4 8)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
8 .9 (0 .35 0 )
9 .6 (0 .37 8 )
7 .8 (0 .3 07 )
8 .2 (0 .3 22 )
4 .1 (0 .16 1)
4 .3 (0 .16 9)
W
=
Hex Nut M 4
(4 places)
4 .8 (0 .18 7)
4 .9 (0 .19 3)
(4 places)
H =
1
2
3
R
POWER MOSFETS
4.0 (0 .1 57 )
4.2 (0 .1 65 )
0 .7 5 (0.03 0)
0 .8 5 (0.03 3)
4
VDSS
200V
112A
3.3 (0.129)
3.6 (0.143)
5.1 (0.2 01 )
5.9 (0.2 32 )
4.0 (0.157)
=
(2 Places)
ID(cont)
R
14.9 (0.587)
15.1 (0.594)
1 .9 5 (0 .07 7 )
2.1 4 (0 .0 84 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
Ω
RDS(on) 0.019
S
D
G
38.0 (1.496)
38.2 (1.504)
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
* Source terminals are shorted
internally. Current handling
capability is equal for
S
either Source terminal.
• Popular SOT–227 Package
D
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
G
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
Drain – Source Voltage
200
112
V
A
A
V
DSS
Continuous Drain Current
I
I
D
1
Pulsed Drain Current
448
DM
Gate – Source Voltage
±30
V
V
GS
V
Gate – Source Voltage Transient
±40
GSM
Total Power Dissipation @ T
Derate Linearly
= 25°C
500
W
case
P
D
4
W/°C
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
–55 to 150
300
T , T
J
STG
°C
A
T
L
1
Avalanche Current (Repetitive and Non-Repetitive)
112
I
AR
1
Repetitive Avalanche Energy
30
E
E
AR
AS
mJ
2
Single Pulse Avalanche Energy
1300
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T = 25°C, L = 579µH, R = 25Ω, Peak I = 112A
J
G
L
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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SML20J122
STATIC ELECTRICAL RATINGS (T
= 25°C unless otherwise stated)
case
Characteristic
Test Conditions
Min. Typ. Max. Unit
BV
I
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
V
V
V
V
V
V
= 0V , I = 250µA
200
V
DSS
GS
DS
DS
GS
DS
DS
GS
GS
D
= V
50
DSS
µA
DSS
(V
= 0V)
= 0.8V
, T = 125°C
500
GS
DSS
C
I
Gate – Source Leakage Current
Gate Threshold Voltage
= ±30V , V
= 0V
±100 nA
GSS
DS
V
= V
> I
, I = 1.0mA
D
2
4
V
A
Ω
GS(TH)
GS
x R
Max
D(ON)
DS(ON)
2
I
On State Drain Current
112
D(ON)
= 10V
= 10V , I = 0.5 I [Cont.]
2
R
Drain – Source On State Resistance
0.019
DS(ON)
D
D
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
C
C
C
Input Capacitance
V
V
= 0V
9700
iss
GS
DS
Output Capacitance
= 25V
2250
680
320
44
pF
nC
oss
rss
Reverse Transfer Capacitance
f = 1MHz
3
Q
Q
Q
t
Total Gate Charge
V
V
= 10V
g
GS
DD
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
= 0.5 V
DSS
gs
gd
I = I [Cont.] @ 25°C
155
20
D
D
V
= 15V
d(on)
GS
DD
t
t
t
V
= 0.5 V
35
r
DSS
ns
Turn-off Delay Time
Fall Time
I = I [Cont.] @ 25°C
55
d(off)
f
D
D
R
= 0.6Ω
7
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
Min. Typ. Max. Unit
I
I
Continuous Source Current (Body Diode)
1
112
A
S
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
448
SM
2
V
t
V
= 0V , I = – I [Cont.]
1.3
V
SD
GS
S
D
Reverse Recovery Time
Reverse Recovery Charge
I = – I [Cont.] , dl / dt = 100A/µs
340
5
ns
µC
rr
S
D
s
Q
I = – I [Cont.] , dl / dt = 100A/µs
S D s
rr
THERMAL CHARACTERISTICS
Characteristic
Min. Typ. Max. Unit
R
R
Junction to Case
0.25
°C/W
40
θJC
Junction to Ambient
θJA
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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