SEMIX202GB066HDS_06 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX202GB066HDS_06 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：1179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 202GB066HDs
ꢋ
ꢏ '()ꢕ6 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
Values
Units
IGBT
ꢔꢕꢖꢉ
1..
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9..
ꢔ
;
$
$
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;
ꢕ
;
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= 9. *** > &:( ꢗ&'(ꢘ
)ꢕ
ꢔꢊꢈꢂꢒ
;ꢕ6 & ꢃꢊꢆ*
9...
ꢔ
®
SEMiX 2s
Inverse diode
$
$
$
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;
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ꢋꢍ ꢏ '( ꢗ8.ꢘ )ꢕ6 ꢋ- ꢏ &:( )ꢕ
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Trench IGBT Modules
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$
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;
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SEMiX 202GB066HDs
ꢋ
ꢏ '()ꢕ6 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
ꢔ4ꢖꢗꢑꢎꢘ
ꢔ4ꢖ ꢏ ꢔꢕꢖ6 $ꢕ ꢏ 5 ꢃ;
(68
ꢔ
Target Data
$
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.6&
ꢃ;
ꢔ
ꢕꢖꢉ
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ꢌꢕꢖ
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& ꢗ.6@ꢘ
96( ꢗ1ꢘ
ꢔ4ꢖ ꢏ &( ꢔ6 ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
'6:( ꢗ96'(ꢘ
ꢃB
Features
ꢔꢕꢖꢗꢈꢐꢑꢘ
$ꢕꢆꢂꢃ ꢏ '.. ;6 ꢔ4ꢖ ꢏ &( ꢔ6
&69( ꢗ&6:ꢘ
&6@ ꢗ'6&ꢘ
ꢔ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ6 ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Dꢕꢖ
ꢇꢆ%ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ%ꢊꢑꢊꢂꢆꢈ
&'6&
.6:(
.65(
&8
ꢆ?
ꢆ?
ꢆ?
ꢆꢁ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢔ4ꢖ ꢏ .6 ꢔꢕꢖ ꢏ '( ꢔ6 ꢏ & !ꢁC
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
Typical Applications
#
ꢑꢅꢌꢃꢊꢆꢐꢒ=ꢍꢎꢊꢚ6 ꢋꢍꢏ '( ꢗ&'(ꢘ )ꢕ
.6: ꢗ&ꢘ
ꢃB
ꢕꢕE>ꢖꢖE
!ꢐꢑꢌꢊ" ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
#ꢅꢈꢂꢆꢐꢆꢑ $ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ $ꢆꢛꢅꢌꢑꢅꢌ
ꢀ
ꢀ
ꢀ
ꢑ%ꢗꢂꢆꢘFꢑꢌ
ꢔꢕꢕ ꢏ 5.. ꢔ6 $ꢕꢆꢂꢃ ꢏ '.. ;
ꢔ4ꢖ ꢏ =8F>&(ꢔ
11 F :8
ꢆꢈ
ꢆꢈ
ꢑ%ꢗꢂ ꢘFꢑ
(9( F @(
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
#4ꢂꢆ ꢏ #4ꢂ ꢏ 96' G6 ꢋ- ꢏ &(. )ꢕ
1 ꢗ8ꢘ
ꢃH
Remarks
Inverse Diode
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ
ꢔ? ꢏ ꢔꢖꢕ
$
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&69 ꢗ&69ꢘ
&61
ꢔ
ꢀ
)ꢕ6 ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢋ ꢏ&'()ꢕ ꢃꢐ"*
ꢕ
ꢔꢗꢋAꢘ
ꢌꢋ
ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
& ꢗ.68(ꢘ
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ꢗ'.5ꢘ
&6&
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ꢔ
ꢃB
;
+ꢌꢂ%ꢇꢍꢑ ꢌꢅꢒꢊꢐ,ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ%
ꢀ
ꢂꢌ ꢋ ꢏ&(.)ꢕ
-
$
$?ꢆꢂꢃ ꢏ '.. ;3 ꢋ- ꢏ '( ꢗ&(.ꢘ )ꢕ
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ꢗ(5ꢘ
2ꢕ
ꢕꢕ
ꢔ4ꢖ ꢏ =&( ꢔ
ꢗ16(ꢘ
ꢃH
Thermal characteristics
#
#
#
ꢚꢅꢌ $4Jꢋ
.6''
.69
KFL
KFL
KFL
ꢑꢎꢗ-=ꢍꢘ
ꢚꢅꢌ $ꢆꢛꢅꢌꢈꢅ Mꢊꢂ%ꢅ
ꢚꢅꢌ ?LM
ꢑꢎꢗ-=ꢍꢘM
ꢑꢎꢗ-=ꢍꢘ?M
#
ꢚꢅꢌ ꢃꢂ%ꢇꢒꢅ
.6.9(
KFL
ꢑꢎꢗꢍ=ꢈꢘ
Temperature sensor
#
ꢋꢍ ꢏ '( )ꢕ
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59'.
OG
K
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Mechanical data
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( F(
Rꢃ
ꢄ
ꢙ
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GB
1
05-04-2006 GES
© by SEMIKRON
SEMiX 202GB066HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
05-04-2006 GES
© by SEMIKRON
SEMiX 202GB066HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward characteristic
3
05-04-2006 GES
© by SEMIKRON
SEMiX 202GB066HDs
Fig. 13 Typ. CAL diode recovered charge
4J
ꢚꢊꢆꢂꢇꢑ ꢉꢖ!ꢊS 'ꢈ
ꢕꢐꢈꢅ ꢉꢖ!ꢊS 'ꢈ
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
05-04-2006 GES
© by SEMIKRON
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