SEMIX303GB12VS [SEMIKRON]
High short circuit capability; 高抗短路能力强
| 型号： | SEMIX303GB12VS |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | High short circuit capability |
| 文件： | 总5页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX303GB12Vs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
IC
1200
448
342
300
900
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3xICnom
VCC = 600 V
-20 ... 20
SEMiX® 3s
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
327
244
300
A
A
A
A
A
Tj = 175 °C
SEMiX303GB12Vs
Features
IFnom
IFRM
IFSM
Tj
IFRM = 3xIFnom
900
tp = 10 ms, sin 180°, Tj = 25 °C
1485
-40 ... 175
• Homogeneous Si
°C
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Module
It(RMS)
Tstg
Tterminal = 80 °C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
Characteristics
Symbol Conditions
IGBT
• Electronic Welding
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C
max.
IC = 300 A
Tj = 25 °C
VCE(sat)
1.75
2.2
2.2
2.5
V
V
V
GE = 15 V
Tj = 150 °C
• Product reliability results are valid for
Tj=150°C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.94
0.88
2.7
4.4
6
1.04
0.98
3.9
5.1
6.5
V
V
m
m
V
mA
mA
nF
nF
nF
nC
• Dynamic values apply to the
following combination of resistors:
R
R
R
R
Gon,main = 1,0
Goff,main = 1,0
G,X = 2,2
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
5.5
E,X = 1,0
0.1
0.3
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
18.0
1.77
1.77
3300
2.50
470
72
26.5
665
109
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
ns
mJ
ns
ns
I
C = 300 A
V
GE = ±15 V
R
R
G on = 2.1
G off = 2.1
di/dton = 4200 A/µs
di/dtoff = 2600 A/µs
du/dtoff = 6600 V/
µs
Tj = 150 °C
Eoff
36.3
mJ
Rth(j-c)
per IGBT
0.1
K/W
GB
© by SEMIKRON
Rev. 2 – 16.02.2011
1
SEMiX303GB12Vs
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
Tj = 25 °C
VF = VEC
2.2
2.2
2.52
2.5
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.7
3.5
1.3
0.9
3.0
4.2
283
52
1.5
1.1
3.4
4.6
V
V
m
m
A
SEMiX® 3s
IF = 300 A
IRRM
Qrr
di/dtoff = 4600 A/µs
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
21.4
mJ
Rth(j-c)
per diode
0.19
K/W
Module
LCE
RCC'+EE'
SEMiX303GB12Vs
Features
20
0.7
1
nH
m
m
K/W
Nm
Nm
Nm
g
TC = 25 °C
res., terminal-chip
T
C = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
0.04
• Homogeneous Si
3
2.5
5
5
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
to terminals (M6)
w
300
Typical Applications*
Temperatur Sensor
• AC inverter drives
• UPS
R100
Tc=100°C (R25=5 k)
493 ± 5%
3550
±2%
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
K
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
R
R
R
R
Gon,main = 1,0
Goff,main = 1,0
G,X = 2,2
E,X = 1,0
GB
2
Rev. 2 – 16.02.2011
© by SEMIKRON
SEMiX303GB12Vs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 2 – 16.02.2011
3
SEMiX303GB12Vs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 16.02.2011
© by SEMIKRON
SEMiX303GB12Vs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 16.02.2011
5
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