SEMIX353GD176HDC_07 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX353GD176HDC_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：937K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 353GD176HDc
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ꢏ *+,ꢕ- ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ&
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
IGBT
Values
Units
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ꢋ. ꢏ *+ ,ꢕ
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1+)
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:ꢈ
SEMiX 33c
Inverse Diode
Trench IGBT Modules
%
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ꢋꢍ ꢏ *+ ,ꢕ
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SEMiX 353GD176HDc
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Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
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Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
min.
typ.
max. Units
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
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Typical Applications
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Remarks
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ꢕꢊꢅꢈ
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)-31
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ꢆ;
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ꢔ
ꢕꢕ
ꢕꢌꢅꢈ
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)-==
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ꢆꢈ
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ꢆꢈ
$
5ꢂꢆ ꢏ +-= A
ꢔꢕꢕ ꢏ (*))ꢔ
%ꢕꢆꢂꢃꢏ **+2
(++
@1)
(3)
$
ꢏ +-= A
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)-)3=
FGH
ꢑꢎꢗ.>ꢍꢘ
GD
1
17-04-2007 SCH
© by SEMIKRON
SEMiX 353GD176HDc
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
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%;ꢆꢂꢃ ꢏ **+ 27 ꢔ5ꢖ ꢏ ) ꢔ
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ꢋ. ꢏ (*+ ,ꢕꢍꢎꢊꢚꢒꢅꢛ<
ꢋ. ꢏ *+ ,ꢕ
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(-+
(-(
)-@
*
(-0+
(-0
ꢔ
ꢔ
ꢔ;)
(-1
ꢔ
ꢋ. ꢏ (*+ ,ꢕ
ꢋ. ꢏ *+ ,ꢕ
(-(
ꢔ
ꢌ;
ꢃA
ꢃA
ꢋ. ꢏ (*+ ,ꢕ
ꢋ. ꢏ (*+ ,ꢕ
*-0
®
%
%;ꢆꢂꢃ ꢏ **+ 2
*3)
31
2
SEMiX 33c
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:ꢕ
ꢔ5ꢖ ꢏ >(+ ꢔ7 ꢔꢕꢕ ꢏ (*)) ꢔ
4+
ꢃD
Trench IGBT Modules
$
ꢚꢅꢌ &ꢊꢂ&ꢅ
)-(1
FGH
ꢑꢎꢗ.>ꢍꢘI
Module
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*)
)-0
(
ꢆꢁ
ꢃA
ꢃA
SEMiX 353GD176HDc
$
ꢌꢅꢈ<- ꢑꢅꢌꢃꢊꢆꢐꢒ>ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ *+ ,ꢕ
ꢋꢍꢐꢈꢅꢏ (*+ ,ꢕ
ꢕꢕK?ꢖꢖK
$
ꢚꢅꢌ ꢃꢂ&ꢇꢒꢅ
)-)(4
FGH
Mꢃ
Mꢃ
ꢄ
ꢑꢎꢗꢍ>ꢈꢘ
Preliminary Data
"
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆL "+
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ "=
1
+
+
ꢈ
"
*-+
ꢑ
Features
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@))
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
Temperature sensor
$
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ꢋOFP7 E
)-4@16+N
1++)6*N
LA
F
())
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
E())G(*+
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
"ꢐꢑꢌꢊ# ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
$ꢅꢈꢂꢆꢐꢆꢑ %ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ %ꢆꢛꢅꢌꢑꢅꢌ
ꢀ
ꢀ
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ ꢊꢈ ꢑꢅꢈꢑꢅ& '
ꢀ
ꢔ
ꢏ()))ꢔ ꢗꢐꢒꢒ ꢂꢑꢎꢅꢌ ꢈꢑꢐꢑꢊꢍ
ꢕꢕ
ꢚꢐꢌꢐꢃꢅꢑꢅꢌꢈ ꢐꢌꢅ ꢑꢅꢈꢑꢅ& '
ꢏ(*))ꢔꢘ
ꢔ
ꢕꢕ
GD
2
17-04-2007 SCH
© by SEMIKRON
SEMiX 353GD176HDc
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
17-04-2007 SCH
© by SEMIKRON
SEMiX 353GD176HDc
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
17-04-2007 SCH
© by SEMIKRON
SEMiX 353GD176HDc
ꢕꢐꢈꢅ ꢉꢖ"ꢊQ 11ꢍ
Rꢊꢆꢂꢇꢑ
5I
5
17-04-2007 SCH
© by SEMIKRON
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