SEMIX452GB176HDS [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX452GB176HDS |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：1022K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 452GB176HDs
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Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
IGBT
Values
Units
ꢔꢕꢖꢉ
ꢋ- ꢏ )* +ꢕ
'/((
12*
ꢔ
"
"
0ꢕ
ꢋ- ꢏ '*( +ꢕ
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ꢋꢍ ꢏ 3( +ꢕ
2'(
0ꢕ45
ꢔ8ꢖꢉ
ꢑꢚꢈꢍ
0ꢕ45ꢏ)60ꢕꢆꢂꢃ
7((
9 )(
'(
"
ꢔ
®
ꢔꢕꢕ ꢏ ')(( ꢔ: ꢔ8ꢖ ; )( ꢔ: ꢋ- ꢏ ')* +ꢕ
ꢔꢕꢖꢉ < '/(( ꢔ
=ꢈ
SEMiX 2s
Inverse Diode
Trench IGBT Modules
0>
ꢋ- ꢏ '*( +ꢕ
ꢋꢍ ꢏ )* +ꢕ
ꢋꢍ ꢏ 3( +ꢕ
23*
)7(
"
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0>45
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7((
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SEMiX 452GB176HDs
ꢑꢚ ꢏ '( ꢃꢈ: ꢈꢊꢆ?
ꢋ- ꢏ )* +ꢕ
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Module
0ꢑꢗ45ꢉꢘ
7((
"
+ꢕ
+ꢕ
ꢔ
Preliminary Data
ꢋꢛ-
@ 1( ??? A '*(
@ 1( ??? A ')*
1(((
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
"ꢕ, ' ꢃꢊꢆ?
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢋ
ꢏ )*+ꢕ, ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
min.
typ.
max. Units
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
ꢔ8ꢖꢗꢑꢎꢘ
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ꢋ- ꢏ )* +ꢕ
(,1*
Typical Applications
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ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢋ- ꢏ ')* +ꢕ
ꢋ- ꢏ )* +ꢕ
ꢋ- ꢏ ')* +ꢕ
ꢋ- ꢏ )*+ꢕ
ꢀ
ꢀ
ꢀ
ꢔꢕꢖ(
'
(,B
2,2
*,)
)
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','
1,)
7
ꢔ
ꢌꢕꢖ
ꢔ8ꢖ ꢏ '* ꢔ
ꢃC
ꢃC
ꢔ
Remarks
ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ ꢊꢈ ꢑꢅꢈꢑꢅ# &
ꢋ- ꢏ ')*+ꢕ
ꢀ
ꢔꢕꢖꢗꢈꢐꢑꢘ
0ꢕꢆꢂꢃ ꢏ 2(( ", ꢔ8ꢖ ꢏ '* ꢔ ꢋ- ꢏ )*+ꢕꢍꢎꢊꢚꢒꢅꢛ?
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),1*
),B
ꢔ
ꢏ'(((ꢔ ꢗꢐꢒꢒ ꢂꢑꢎꢅꢌ ꢈꢑꢐꢑꢊꢍ
ꢕꢕ
),1*
ꢔ
ꢚꢐꢌꢐꢃꢅꢑꢅꢌꢈ ꢐꢌꢅ ꢑꢅꢈꢑꢅ# &
ꢏ')((ꢔ
ꢕꢊꢅꢈ
)7,1
','
ꢆ>
ꢆ>
ꢔ
ꢕꢕ
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ )*, ꢔ8ꢖ ꢏ ( ꢔ
ꢏ ' 5ꢁD
ꢕꢌꢅꢈ
E8
(,33
ꢆ>
ꢆꢕ
)3((
ꢑ#ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ#ꢗꢂ ꢘ
21(
/*
ꢆꢈ
ꢆꢈ
ꢃF
ꢆꢈ
ꢆꢈ
48ꢂꢆ ꢏ 1 C
48ꢂ ꢏ 1 C
ꢔꢕꢕ ꢏ ')((ꢔ
0ꢕꢆꢂꢃꢏ 2(("
ꢋ- ꢏ ')* +ꢕ
'3(
B((
'(*
ꢑ
ꢖꢂ
''(
ꢃF
4ꢑꢎꢗ-@ꢍꢘ
ꢚꢅꢌ 08Gꢋ
(,(/2
HIJ
GB
1
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
Characteristics
Symbol Conditions
min.
typ.
',/
max. Units
ꢔ> ꢏ ꢔꢖꢕ
0>ꢆꢂꢃ ꢏ 2(( ": ꢔ8ꢖ ꢏ ( ꢔ
ꢋ- ꢏ )* +ꢕꢍꢎꢊꢚꢒꢅꢛ?
ꢋ- ꢏ ')* +ꢕꢍꢎꢊꢚꢒꢅꢛ?
ꢋ- ꢏ )* +ꢕ
',B
',B
',2
','
ꢔ
',/
','
(,B
)
ꢔ
ꢔ>(
ꢔ
ꢋ- ꢏ ')* +ꢕ
ꢋ- ꢏ )* +ꢕ
ꢔ
ꢌ>
ꢃC
ꢃC
ꢋ- ꢏ ')* +ꢕ
ꢋ- ꢏ ')* +ꢕ
),/
0445
Eꢌꢌ
0>ꢆꢂꢃ ꢏ 2(( "
27(
3*
"
®
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=ꢕ
SEMiX 2s
ꢖꢌꢌ
ꢔ8ꢖ ꢏ @'* ꢔ: ꢔꢕꢕ ꢏ ')(( ꢔ
ꢚꢅꢌ #ꢊꢂ#ꢅ
17
ꢃF
4ꢑꢎꢗ-@ꢍꢘK
(,'*
HIJ
Trench IGBT Modules
Module
Lꢕꢖ
'3
(,/
'
ꢆꢁ
ꢃC
ꢃC
4ꢕꢕMAꢖꢖM
ꢌꢅꢈ?, ꢑꢅꢌꢃꢊꢆꢐꢒ@ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ )* +ꢕ
ꢋꢍꢐꢈꢅꢏ ')* +ꢕ
SEMiX 452GB176HDs
4ꢑꢎꢗꢍ@ꢈꢘ
5ꢈ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
(,(1*
HIJ
Oꢃ
Oꢃ
ꢄ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆN 5*
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 57
2
*
*
Preliminary Data
5ꢑ
),*
ꢙ
)*(
Features
Temperature sensor
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
4'((
ꢋꢍꢏ'((+ꢕ ꢗ4)*ꢏ* NCꢘ
4ꢗꢋꢘꢏ4'((ꢅ6ꢚQG'((I')*ꢗ'Iꢋ@'Iꢋ'((ꢘR:
ꢋQHR: G
(,1B29*P
2**(9)P
NC
H
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ꢀ
G'((I')*
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
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ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢀ
ꢀ
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ ꢊꢈ ꢑꢅꢈꢑꢅ# &
ꢀ
ꢔ
ꢏ'(((ꢔ ꢗꢐꢒꢒ ꢂꢑꢎꢅꢌ ꢈꢑꢐꢑꢊꢍ
ꢕꢕ
ꢚꢐꢌꢐꢃꢅꢑꢅꢌꢈ ꢐꢌꢅ ꢑꢅꢈꢑꢅ# &
ꢏ')((ꢔ
ꢔ
ꢕꢕ
GB
2
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HDs
ꢕꢐꢈꢅ ꢉꢖ5ꢊS )ꢈ
%ꢊꢆꢂꢇꢑ
8G
5
17-04-2007 SCH
© by SEMIKRON
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