SEMIX553GB128D [SEMIKRON]
SPT IGBT Modules; SPT IGBT模块
| 型号： | SEMIX553GB128D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | SPT IGBT Modules |
| 文件： | 总5页 (文件大小：1001K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 553GB128D
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Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢑꢚꢈꢅ
Values
Units
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SEMiX 3
Inverse Diode
SPT IGBT Modules
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SEMiX 553GB128D
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Preliminary Data
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Features
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ꢏꢅꢑꢒꢆꢂꢔꢂꢄꢕ
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ꢍ ',-ꢗ. ꢇꢆꢔꢅꢈꢈ ꢂꢏꢒꢅꢓ ꢊꢈꢅ ꢈ!ꢅꢑꢊꢎꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢑꢚꢈꢅ
min.
typ.
max. Units
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Typical Applications
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Remarks
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IJK
GB
1
20-04-2007 SCH
© by SEMIKRON
SEMiX 553GB128D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
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2?ꢆꢂꢃ ꢍ 3(( $; ꢖ9ꢘ ꢍ ( ꢖ
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SPT IGBT Modules
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SEMiX 553GB128D
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6ꢈ
!ꢅꢓ ꢃꢂ%ꢇꢔꢅ
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IJK
+ꢃ
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ꢄ
Preliminary Data
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ꢏꢂ ꢏꢅꢓꢃꢊꢆꢚꢔꢈ ꢙ68ꢛ
3
,
,
6ꢏ
'.,
Features
3((
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢉꢋꢌ ꢍ ꢉꢂꢎꢏꢐꢋꢇꢆꢑꢒꢐꢌꢒꢓꢂꢇꢄꢒ
ꢏꢅꢑꢒꢆꢂꢔꢂꢄꢕ
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ꢀ
Temperature sensor
51((
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ꢀ
ꢀ
ꢗꢘꢙꢈꢚꢏꢛ
ꢑꢂꢅꢎꢎꢊꢑꢊꢅꢆꢏ
ꢁꢊꢄꢒ ꢈꢒꢂꢓꢏ ꢑꢊꢓꢑꢇꢊꢏ ꢑꢚ!ꢚ#ꢊꢔꢊꢏꢕ
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
$ꢗ ꢊꢆ"ꢅꢓꢏꢅꢓ %ꢓꢊ"ꢅꢈ
&ꢋꢉ
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ꢀ
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This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
+ꢂꢏ ꢎꢂꢓ ꢆꢅ %ꢅꢈꢊꢄꢆ
ꢀ
GB
2
20-04-2007 SCH
© by SEMIKRON
SEMiX 553GB128D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
20-04-2007 SCH
© by SEMIKRON
SEMiX 553GB128D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
20-04-2007 SCH
© by SEMIKRON
SEMiX 553GB128D
ꢗꢚꢈꢅ ꢉꢘ6ꢊR 3
ꢋꢊꢆꢂꢇꢏ
9H
5
20-04-2007 SCH
© by SEMIKRON
相关型号：
SEMIX553GD128D
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