SEMIX553GD128D [SEMIKRON]
Insulated Gate Bipolar Transistor, 540A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 33, 33 PIN;
| 型号： | SEMIX553GD128D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 540A I(C), 1200V V(BR)CES, N-Channel, CASE SEMIX 33, 33 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总4页 (文件大小：1419K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 553GD128D
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Absolute Maximum Ratings
Symbol Conditions
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Values
Units
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Characteristics
Symbol Conditions
IGBT
ꢑꢚꢈꢅ
min.
typ.
max. Units
SEMiX 553GD128D
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Features
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Typical Applications
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Mechanical data
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1
04-06-2004 FRM
© by SEMIKRON
SEMiX 553GD128D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
2
04-06-2004 FRM
© by SEMIKRON
SEMiX 553GD128D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 11 Typ. CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
04-06-2004 FRM
© by SEMIKRON
SEMiX 553GD128D
Fig. 13 Typ. CAL diode recovered charge
8M
ꢗꢚꢈꢅ ꢉꢘ5ꢊS 33
ꢗꢚꢈꢅ ꢉꢘ5ꢊS 33
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
04-06-2004 FRM
© by SEMIKRON
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