SEMIX553GB128DS_09 [SEMIKRON]
SPT IGBT Modules; SPT IGBT模块
| 型号： | SEMIX553GB128DS_09 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | SPT IGBT Modules |
| 文件： | 总6页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX553GB128Ds
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
533
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 150 °C
379
ICnom
300
ICRM
ICRM = 2xICnom
600
VGES
-20 ... 20
SEMiX® 3s
SPT IGBT Modules
SEMiX553GB128Ds
Features
VCC = 600 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-40 ... 150
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
421
289
A
A
Tj = 150 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
600
A
2300
A
• Homogeneous Si
-40 ... 150
°C
• SPT = Soft-Punch-Through technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
Characteristics
Symbol Conditions
IGBT
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
min.
typ.
max.
Unit
IC = 300 A
VCE(sat)
Tj = 25 °C
1.9
2.1
2.35
2.55
V
V
V
GE = 15 V
Tj = 125 °C
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VCE0
rCE
1
1.15
1.05
4.0
V
V
0.9
3.0
4.0
5
mΩ
mΩ
V
VGE = 15 V
5.0
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
4.5
6.5
0.1
0.3
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
V
Tj = 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
28.3
1.86
1.17
2880
1.33
185
65
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
ns
VCC = 600 V
IC = 300 A
ns
Eon
td(off)
tf
27
mJ
ns
RG on = 3 Ω
635
80
R
G off = 3 Ω
ns
Eoff
Rth(j-c)
33
mJ
K/W
per IGBT
0.061
GB
© by SEMIKRON
Rev. 8 – 16.12.2009
1
SEMiX553GB128Ds
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
VF = VEC
Tj = 25 °C
2.0
1.8
2.50
2.3
V
V
V
GE = 0 V
Tj = 125 °C
chip
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
VF0
rF
0.75
0.5
1.1
0.85
3.0
3.2
325
46
1.45
1.2
V
V
2.5
3.5
mΩ
mΩ
A
2.7
3.7
SEMiX® 3s
SPT IGBT Modules
SEMiX553GB128Ds
Features
IF = 300 A
di/dtoff = 5400 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 600 V
Tj = 125 °C
Err
17
mJ
Rth(j-c)
per diode
0.11
K/W
Module
LCE
20
0.7
1
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
Rth(c-s)
Ms
per module
0.04
• Homogeneous Si
to heat sink (M5)
3
5
5
• SPT = Soft-Punch-Through technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
to terminals (M6)
Mt
2.5
w
300
Temperatur Sensor
Typical Applications*
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
GB
2
Rev. 8 – 16.12.2009
© by SEMIKRON
SEMiX553GB128Ds
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 8 – 16.12.2009
3
SEMiX553GB128Ds
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 8 – 16.12.2009
© by SEMIKRON
SEMiX553GB128Ds
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 8 – 16.12.2009
5
SEMiX553GB128Ds
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
6
Rev. 8 – 16.12.2009
© by SEMIKRON
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