SK10DGDL12T7ETE1 [SEMIKRON]

Bridge Rectifier Diode,;


型号：	SK10DGDL12T7ETE1
厂家：	SEMIKRON INTERNATIONAL
描述：	Bridge Rectifier Diode,
文件：	总7页 (文件大小：360K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SK10DGDL12T7ETE1

Absolute Maximum Ratings

Symbol Conditions

IGBT 1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E1

I_CRM= 2 x I_Cnom

V_CC= 800 V

3-phase bridge rectifer +

brake chopper + 3-phase

bridge inverter

t_psc

T_j

_GE≤ 15 V

_CES≤ 1200 V

T_j= 175 °C

µs

°C

-40 ... 175

Evaluation Sample

SK10DGDL12T7ETE1

Target Data

Absolute Maximum Ratings

Symbol Conditions

IGBT 2

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

Features*

• Low inductive design

• Press-Fit contact technology

• Rugged mounting due to integrated

mounting clamps

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

• Trenchstop7 IGBT technology

• Robust and soft switching CAL4F

diode technology

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 2 x I_Cnom

V_CC= 800 V

_GE≤ 15 V

T_j= 175 °C

t_psc

T_j

µs

°C

_CES≤ 1200 V

-40 ... 175

Typical Applications

Absolute Maximum Ratings

Symbol Conditions

Diode 1

• Motor drives

• Air conditioning

• Auxiliary Inverters

Values

Unit

T_j= 25 °C

V_RRM

I_F

1600

A²s

°C

Remarks

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

• IGBT1: inverter IGBT

• IGBT2: brake IGBT

• Diode1: rectifier diode

• Diode2: APD inverter

• Diode3: FWD brake

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Fnom

I_FSM

i²t

10 ms, sin 180°, T_j= 150 °C

200

-40 ... 175

T_j

DGDL-ET

Rev. 0.2 – 12.02.2020

SK10DGDL12T7ETE1

Absolute Maximum Ratings

Symbol Conditions

Diode 2

Values

Unit

T_j= 25 °C

V_RRM

I_F

1200

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

SEMITOP^®E1

I_FRM= 3 x I_Fnom

10 ms

sin 180°

T_j= 25 °C

T_j= 150 °C

3-phase bridge rectifer +

brake chopper + 3-phase

bridge inverter

Evaluation Sample

SK10DGDL12T7ETE1

Target Data

T_j

-40 ... 175

°C

Absolute Maximum Ratings

Symbol Conditions

Diode 3

V_RRM

I_F

Values

Unit

T_j= 25 °C

1200

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

Features*

• Low inductive design

• Press-Fit contact technology

• Rugged mounting due to integrated

mounting clamps

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

• Trenchstop7 IGBT technology

• Robust and soft switching CAL4F

diode technology

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

I_FRM= 3 x I_Fnom

10 ms

sin 180°

T_j= 25 °C

T_j= 150 °C

T_j

-40 ... 175

°C

Absolute Maximum Ratings

Symbol Conditions

Module

I_t(RMS)

T_stg

Values

Unit

Typical Applications

• Motor drives

∆T_terminalat PCB joint = 30 K, per pin

-40 ... 125

2500

°C

• Air conditioning

• Auxiliary Inverters

V_isol

AC, sinusoidal, t = 1 min

Remarks

• IGBT1: inverter IGBT

• IGBT2: brake IGBT

• Diode1: rectifier diode

• Diode2: APD inverter

• Diode3: FWD brake

DGDL-ET

Rev. 0.2 – 12.02.2020

SK10DGDL12T7ETE1

Characteristics

Symbol Conditions

IGBT 1

min.

typ.

max.

Unit

I_C= 10 A

T_j= 25 °C

V_CE(sat)

1.60

1.82

1.75

1.96

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.75

107

5.8

1.00

0.83

113

6.45

mΩ

chiplevel

V_GE= 15 V

chiplevel

SEMITOP^®E1

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE= V_CE, I_C= 0.22 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.15

1.9

t.b.d.

0.0066

157

3-phase bridge rectifer +

brake chopper + 3-phase

bridge inverter

Evaluation Sample

SK10DGDL12T7ETE1

Target Data

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= -15V...+15V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

t.b.d.

1.04

t.b.d.

_C= 10 A

_GE= +15/-15 V

E_on

t_d(off)

t_f

_{G on}= 8.2 Ω

_{G off}= 8.2 Ω

Features*

• Low inductive design

• Press-Fit contact technology

• Rugged mounting due to integrated

mounting clamps

T_j= 150 °C

E_off

1.75

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

per IGBT, λ_paste=0.8 W/(mK)

per IGBT, λ_paste=2.5 W/(mK)

R_th(j-s)

2.13

1.74

K/W

• Trenchstop7 IGBT technology

• Robust and soft switching CAL4F

diode technology

Characteristics

Symbol Conditions

IGBT 2

min.

typ.

max.

Unit

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

I_C= 10 A

T_j= 25 °C

V_CE(sat)

1.60

1.82

1.75

1.96

Typical Applications

_GE= 15 V

T_j= 150 °C

chiplevel

• Motor drives

• Air conditioning

• Auxiliary Inverters

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.75

107

5.8

1.00

0.83

113

6.45

mΩ

chiplevel

V_GE= 15 V

chiplevel

Remarks

• IGBT1: inverter IGBT

• IGBT2: brake IGBT

• Diode1: rectifier diode

• Diode2: APD inverter

• Diode3: FWD brake

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE= V_CE, I_C= 0.22 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.15

1.9

t.b.d.

0.0066

157

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= -15V...+15V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

t.b.d.

1.04

t.b.d.

_C= 10 A

_GE= +15/-15 V

E_on

t_d(off)

t_f

_{G on}= 8.2 Ω

_{G off}= 8.2 Ω

T_j= 150 °C

E_off

1.75

per IGBT, λ_paste=0.8 W/(mK)

per IGBT, λ_paste=2.5 W/(mK)

R_th(j-s)

2.13

1.74

K/W

DGDL-ET

Rev. 0.2 – 12.02.2020

SK10DGDL12T7ETE1

Characteristics

Symbol Conditions

Diode 1

min.

typ.

max.

Unit

I_F= 8 A

T_j= 25 °C

V_F

0.97

0.84

1.20

1.07

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_F0

0.89

0.73

1.09

0.92

chiplevel

r_F

mΩ

K/W

chiplevel

SEMITOP^®E1

T_j= 145 °C, V_RRM

I_R

R_th(j-s)

per Diode, λ_paste=0.8 W/(mK)

per Diode, λ_paste=2.5 W/(mK)

1.89

1.52

3-phase bridge rectifer +

brake chopper + 3-phase

bridge inverter

Evaluation Sample

SK10DGDL12T7ETE1

Target Data

Characteristics

Symbol Conditions

Diode 2

V_F

min.

typ.

max.

Unit

I_F= 8 A

T_j= 25 °C

2.33

2.35

2.65

2.68

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_F0

1.30

0.90

129

181

t.b.d.

1.50

1.10

144

198

mΩ

Features*

chiplevel

• Low inductive design

r_F

• Press-Fit contact technology

• Rugged mounting due to integrated

mounting clamps

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

• Trenchstop7 IGBT technology

• Robust and soft switching CAL4F

diode technology

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

chiplevel

I_F= 10 A

I_RRM

Q_rr

µC

V_GE= -15 V

T_j= 150 °C

E_rr

0.63

_CC= 600 V

per Diode, λ_paste=0.8 W/(mK)

per Diode, λ_paste=2.5 W/(mK)

R_th(j-s)

2.64

2.24

K/W

Characteristics

Typical Applications

Symbol Conditions

Diode 3

V_F

min.

typ.

max.

Unit

• Motor drives

• Air conditioning

• Auxiliary Inverters

I_F= 8 A

T_j= 25 °C

2.33

2.35

2.65

2.68

T_j= 150 °C

chiplevel

Remarks

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_F0

1.30

0.90

129

181

t.b.d.

1.50

1.10

144

198

mΩ

• IGBT1: inverter IGBT

• IGBT2: brake IGBT

• Diode1: rectifier diode

• Diode2: APD inverter

• Diode3: FWD brake

chiplevel

r_F

chiplevel

I_F= 10 A

I_RRM

Q_rr

µC

V_GE= -15 V

T_j= 150 °C

E_rr

0.63

_CC= 600 V

per Diode, λ_paste=0.8 W/(mK)

per Diode, λ_paste=2.5 W/(mK)

R_th(j-s)

2.64

2.24

K/W

DGDL-ET

Rev. 0.2 – 12.02.2020

SK10DGDL12T7ETE1

Characteristics

Symbol Conditions

Module

min.

typ.

max.

Unit

M_s

to heatsink

weight

1.6

2.3

Characteristics

Symbol Conditions

Temperature Sensor

min.

typ.

max.

Unit

SEMITOP^®E1

T_r= 100 °C

R₁₀₀

493 ± 5%

3550

±2%

B_100/125

R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K];

3-phase bridge rectifer +

brake chopper + 3-phase

bridge inverter

Evaluation Sample

SK10DGDL12T7ETE1

Target Data

Features*

• Low inductive design

• Press-Fit contact technology

• Rugged mounting due to integrated

mounting clamps

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

• Trenchstop7 IGBT technology

• Robust and soft switching CAL4F

diode technology

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

Typical Applications

• Motor drives

• Air conditioning

• Auxiliary Inverters

Remarks

• IGBT1: inverter IGBT

• IGBT2: brake IGBT

• Diode1: rectifier diode

• Diode2: APD inverter

• Diode3: FWD brake

DGDL-ET

Rev. 0.2 – 12.02.2020

SK10DGDL12T7ETE1

SEMITOP^®E1

DGDL-ET

Rev. 0.2 – 12.02.2020

SK10DGDL12T7ETE1

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.

*IMPORTANT INFORMATION AND WARNINGS

The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics

("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in

typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective

application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their

applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical

injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is

compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written

document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of

the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is

given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,

warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the

applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual

property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of

intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain

dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document

supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make

changes.

In accordance with the quality guidelines of SEMIKRON, we would like to point out that the products are evaluation samples. These evaluation

samples are not produced under quality conditions approaching those of series production, and are at the present time not included in the

SEMIKRON quality monitoring and control process. Neither the product nor the production process has to date gone through the SEMIKRON

internal authorization procedure. The evaluation samples may differ from the final series product in terms of their performance, applicability

and specification. SEMIKRON may make any amendments without any prior notification. SEMIKRON cannot and shall not promise or commit

itself to release and/or make available a final version or series product after the development phase. Evaluation samples may only be used in

line with their functionality and performance for function tests in the context of developments. Evaluation samples are not released for use in

serial products.

IMPORTANT: Evaluation samples must be commissioned and operated by qualified persons only. The user is responsible to use and operate

evaluation samples only in full accordance with all applicable regulations and standards, especially, but not limited to safety standards,

accident prevention and environmental regulations. We explicitly recommend to follow the applicable local implementation of EN50191.

If and when the customer sells evaluation samples to any third party the customer must inform the third party in advance of all notes, warnings,

reservations and obligations provided and imposed by SEMIKRON. SEMIKRON cannot and will not assume any responsibility with regard to

freedom from defects, functionality, and adaptation to and interaction with possible applications of the user or with regard to any other potential

risks resulting from use of evaluation samples. Therefore SEMIKRON explicitly excludes any warranty and liability; as far as legally possible.

The customer shall fully indemnify and hold harmless SEMIKRON from any and all risks, damages, losses, expenses and costs directly or

indirectly resulting out of or in connection with the commissioning, operation, system integration, sale, dissemination or any other kind of use

of evaluation samples by the customer and/or any third party, which has come into possession of evaluation samples through or because of

the customer. All know-how and all registerable and non-registerable copyrights and industrial property rights arising from or in connection with

these evaluation samples remain the exclusive property of SEMIKRON.

Rev. 0.2 – 12.02.2020

SK10DGDL12T7ETE1 [SEMIKRON]

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