SK10GD126ET_07 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK10GD126ET_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：689K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK10GD126ET
# , -. /ꢁ0 ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
1ꢁ23
#4 , -. /ꢁ
6-77
6.
1
'
'
%
#4 , 6.7 /ꢁ
#ꢊ , -. /ꢁ
#ꢊ , 87 /ꢁ
ꢁ
66
%
%
ꢁ9:, - ꢗ %ꢁꢍꢂꢃ
6;
< -7
67
'
1
ꢁ9:
1&23
ꢇꢄꢊꢆ
®
1ꢁꢁ , ;77 1= 1&2 > -7 1= #4 , 6-. /ꢁ
1ꢁ23 ? 6-77 1
@ꢊ
SEMITOP 3
Inverse Diode
IGBT Module
%
#4 , 6.7 /ꢁ
#ꢊ , -. /ꢁ
#ꢊ , 87 /ꢁ
-.
6A
'
'
)
%
%)9:, - ꢗ %)ꢍꢂꢃ
B7
'
)9:
SK10GD126ET
Module
%
'
/ꢁ
/ꢁ
1
ꢇꢘ9:3ꢛ
#
CD7 EEE F6.7
CD7 EEE F6-.
-.77
+4
Preliminary Data
#
ꢊꢇꢌ
1ꢋꢊꢂꢔ
'ꢁ0 6 ꢃꢋꢍE
Features
# , -. /ꢁ0 ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
1&2ꢘꢇꢕꢛ
1&2 , 1ꢁ20 %ꢁ , 70B ꢃ'
.
.08
;0.
1
ꢃ'
ꢃ'
ꢍ'
ꢍ'
1
%
1&2 , 7 10 1ꢁ2 , 1ꢁ23
1ꢁ2 , 7 10 1&2 , -7 1
#4 , -. /ꢁ
707.
ꢁ23
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ꢁ'( ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ )*ꢙ
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ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
#4 , 6-. /ꢁ
#4 , -. /ꢁ
%
6-7
60-
&23
#4 , 6-. /ꢁ
#4 , -. /ꢁ
1ꢁ27
6
Typical Applications
#4 , 6-. /ꢁ
#4 , -./ꢁ
70G
8A
1
%ꢍ+ꢉꢏꢇꢉꢏ
ꢏꢁ2
1&2 , 6. 1
66B
-06
ꢃH
ꢃH
1
ꢀ
#4 , 6-./ꢁ
#4 , -./ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , 6-./ꢁꢆꢕꢋꢄꢔꢉ+E
6B8
60A
-0-
1ꢁ2ꢘꢊꢅꢇꢛ
%ꢁꢍꢂꢃ , 8 '0 1&2 , 6. 1
1
ꢁꢋꢉꢊ
70;
ꢍ)
ꢍ)
ꢁꢂꢉꢊ
1ꢁ2 , -.0 1&2 , 7 1
ꢓ , 6 :ꢒI
707BA
ꢁꢏꢉꢊ
707-G
ꢍ)
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
8.
B7
6
ꢍꢊ
ꢍꢊ
ꢃJ
ꢍꢊ
ꢍꢊ
9&ꢂꢍ , A. H
9&ꢂꢓꢓ , A. H
1ꢁꢁ , ;771
2ꢂꢍ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
%ꢁꢍꢂꢃ, 8'
#4 , 6-. /ꢁ
1&2,<6.1
DB7
G7
2ꢂꢓꢓ
6
ꢃJ
9ꢇꢕꢘ4Cꢊꢛ
ꢄꢉꢏ %&ꢚ#
-
KL*
GD-ET
1
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
1) , 12ꢁ
%)ꢍꢂꢃ , 8 '= 1&2 , 7 1
#4 , -. /ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , 6-. /ꢁꢆꢕꢋꢄꢔꢉ+E
#4 , -. /ꢁ
60G
-
-0-
1
1
1)7
6
606
70G
DA
1
#4 , 6-. /ꢁ
#4 , -. /ꢁ
708
D7
.B
1
ꢏ)
ꢃH
ꢃH
#4 , 6-. /ꢁ
#4 , 6-. /ꢁ
®
%
%)ꢍꢂꢃ , 6. '
-6
'
SEMITOP 3
99:
Mꢏꢏ
2ꢏꢏ
ꢈꢋLꢈꢇ , CB77 'L@ꢊ
1ꢁꢁ, ;771
B0.
@ꢁ
60D
ꢃJ
KL*
!ꢃ
ꢌ
IGBT Module
9ꢇꢕꢘ4Cꢊꢛꢙ
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
-06
-0.
:
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍN
-0-.
ꢊ
ꢐ
B7
SK10GD126ET
Temperature sensor
9677
#ꢊ ,677/ꢁ ꢘ9-.,.NHꢛ
DGB<.O
H
Preliminary Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢔꢇꢏꢅꢓꢅꢊꢇ !"# ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ %&ꢚ#
ꢁ'( ꢇꢉꢆꢕꢍꢂꢔꢂꢌ$ )*ꢙ
%ꢍꢇꢉꢌꢏꢅꢇꢉꢈ !#ꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
Typical Applications
%ꢍ+ꢉꢏꢇꢉꢏ
ꢀ
GD-ET
2
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
21-02-2007 SCT
© by SEMIKRON
SK10GD126ET
UL recognized file
no. E 63 532
ꢁꢅꢊꢉ #.- ꢘ3ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ0 ꢋꢍ ꢇꢕꢉ "ꢁꢚ0 ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊP -ꢃꢃꢛ
ꢁꢅꢊꢉ # .-
&ꢙC2#
5
21-02-2007 SCT
© by SEMIKRON
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