SK30GB128_07 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK30GB128_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：614K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK30GB128
" # *+ ,ꢁ% ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
$
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0*11
2+
$
3
3
ꢁ-
(
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8 *1
01
3
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ꢇꢄꢊꢆ
$
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=ꢊ
®
$ꢁ- < 0*11 $
SEMITOP 2
Inverse Diode
(
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"ꢊ # *+ ,ꢁ
"ꢊ # 41 ,ꢁ
2?
*+
3
3
>
IGBT Module
(
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(
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3
3
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2+1
> 6
SK30GB128
Freewheeling Diode
SK30GAL128
SK30GAR128
Preliminary Data
(
". # 0+1 ,ꢁ
"
ꢆꢅꢊꢉ # *+ ,ꢁ
ꢆꢅꢊꢉ # 41 ,ꢁ
2?
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2+1
> 6
Module
Features
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3
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ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
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ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚ
$
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ꢋꢊꢂꢔ
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇꢛ
!"# ꢂꢓꢇ !ꢑꢍꢆꢕ "ꢕꢏꢂꢑꢌꢕ
ꢇꢉꢆꢕꢍꢂꢔꢂꢌꢛ
ꢀ
ꢀ
" # *+ ,ꢁ% ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
min.
typ.
max. Units
$
ꢐꢋꢇꢕ ꢄꢂꢊꢋꢇꢋ&ꢉ ꢆꢂꢉꢓꢓꢋꢆꢋꢉꢍꢇ
ꢀ
ꢆꢉ%ꢊꢅꢇ
$
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A%+
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1%0
9%+
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Typical Applications
ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ'
(ꢍ&ꢉꢏꢇꢉꢏ
ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
)!
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ꢃD
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$
(ꢁꢍꢂꢃ # *+ 3% $7- # 0+ $
0%?
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2%?
ꢁ-ꢘꢊꢅꢇ'
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ꢍ>
ꢍ>
ꢁꢂꢉꢊ
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1%1E
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ꢇꢈꢘꢂꢍ'
ꢇꢏ
++
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ꢍꢊ
57ꢂꢍ # 0+ D
57ꢂꢓꢓ # 0+ D
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7-#80+$
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ꢇꢈꢘꢂꢓꢓ'
ꢇꢓ
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5ꢇꢕꢘ.@ꢊ'
ꢄꢉꢏ (7ꢚ"
0
HIJ
GB
GAL
GAR
1
08-03-2007 SCT
© by SEMIKRON
SK30GB128
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
$> # $-ꢁ
(>ꢍꢂꢃ # *+ 3: $7- # 1 $
". # *+ ,ꢁꢆꢕꢋꢄꢔꢉ&B
". # 0*+ ,ꢁꢆꢕꢋꢄꢔꢉ&B
*
*%+
*%2
$
$
0%4
$
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0
0%*
AA
$
>1
ꢏ>
(
". # 0*+ ,ꢁ
". # 0*+ ,ꢁ
2*
ꢃD
(>ꢍꢂꢃ # ** 3
*+
3
556
Kꢏꢏ
ꢈꢋIꢈꢇ # @+11 3I=ꢊ
ꢁꢁ# 911$
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
A%+
=ꢁ
-
$
0
ꢃG
ꢏꢏ
®
SEMITOP 2
5ꢇꢕꢘ.@ꢊ'ꢙ
0%*
HIJ
Freewheeling Diode
IGBT Module
$> # $-ꢁ
(>ꢍꢂꢃ # *+ 3: $7- # 1 $
". # *+ ,ꢁꢆꢕꢋꢄꢔꢉ&B
". # 0*+ ,ꢁꢆꢕꢋꢄꢔꢉ&B
*
*%+
*%2
$
$
0%4
$
". # 0*+ ,ꢁ
0
0%*
AA
$
$
>1
SK30GB128
ꢏ>
(
". # 0*+ ,ꢁ
". # 0*+ ,ꢁ
2*
SK30GAL128
SK30GAR128
Preliminary Data
(
>ꢍꢂꢃ # ** 3
*+2
A%+
3
556
Kꢏꢏ
ꢈꢋIꢈꢇ # @+11 3I=ꢊ
=ꢁ
-
$5#911$
0
ꢃG
HIJ
Mꢃ
ꢌ
ꢏꢏ
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
0%*
*
6ꢊ
ꢐ
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍL 60
Features
0E
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇꢛ
!"# ꢂꢓꢇ !ꢑꢍꢆꢕ "ꢕꢏꢂꢑꢌꢕ
ꢇꢉꢆꢕꢍꢂꢔꢂꢌꢛ
ꢀ
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
$
ꢐꢋꢇꢕ ꢄꢂꢊꢋꢇꢋ&ꢉ ꢆꢂꢉꢓꢓꢋꢆꢋꢉꢍꢇ
ꢀ
ꢆꢉ%ꢊꢅꢇ
Typical Applications
ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ'
(ꢍ&ꢉꢏꢇꢉꢏ
ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
)!
ꢀ
ꢀ
ꢀ
ꢀ
GB
GAL
GAR
2
08-03-2007 SCT
© by SEMIKRON
SK30GB128
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
08-03-2007 SCT
© by SEMIKRON
SK30GB128
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
08-03-2007 SCT
© by SEMIKRON
SK30GB128
UL recognized file
no. E 63 532
ꢁꢅꢊꢉ "4 ꢘ ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ% ꢋꢍ ꢇꢕꢉ !ꢁꢚ% ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊN *ꢃꢃ'
ꢁꢅꢊꢉ "4
735
ꢁꢅꢊꢉ "4
73O
ꢁꢅꢊꢉ "4
7ꢚ
5
08-03-2007 SCT
© by SEMIKRON
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