SK60GB125_06 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK60GB125_06 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总4页 (文件大小：731K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 60 GB 125
$ * +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
%
0+11
3 +1
%
%
7
7
ꢁ/'
%
2/'
(
(
$ꢊ * +, ꢘ41 -ꢁ5
,0 ꢘ6,
016 ꢘ:1
ꢁ
ꢇꢄ 9 0 ꢃꢊ5 $ꢊ * +, ꢘ41 -ꢁ5
ꢁ8
$
< =1 >>> ? 0,1
-ꢁ
;
Inverse/Freewheeling CAL diode
(
$ꢊ * +, ꢘ41 -ꢁ5
,: ꢘ64
7
7
@
®
(@8 * < (ꢁ8
ꢇꢄ 9 0 ꢃꢊ5 $ꢊ * +, ꢘ41 -ꢁ5
00= ꢘ64
SEMITOP 3
$
< =1 >>> ? 0,1
-ꢁ
;
$
$
< =1 >>> ? 0+,
+A1
-ꢁ
-ꢁ
ꢊꢇꢌ
IGBT Module
$ꢉꢏꢃꢋꢍꢅꢔꢊ. 01 ꢊ
ꢊꢂꢔ
%
7ꢁ ,1 ꢒB. ꢏ>ꢃ>ꢊ> 0 ꢃꢋꢍ> C 0 ꢊ
+,11 C 6111
%
ꢋꢊꢂꢔ
SK 60 GB 125
$ * +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
Preliminary Data
min.
typ.
max. Units
%
(ꢁ * ,1 7. $; * +, ꢘ0+, -ꢁ
6.+ ꢘ6.4,
,.,
%
ꢁ/ꢘꢊꢅꢇ
Features
%
%ꢁ/ * %2/5 (ꢁ * ,1 7
=.,
A.,
1.A
%
2/ꢘꢇꢕ
ꢁꢋꢉꢊ
%ꢁ/ * 0, %5 %2/ * 1 %5 0 8ꢒB
6.=
ꢍ@
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ
ꢀ
ꢀ
ꢀ
Dꢇꢕꢘ;<ꢊ
ꢄꢉꢏ (2ꢚ$
ECF
ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ
ECF
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG
ꢇꢈꢘꢂꢍ
ꢇꢏ
ꢇꢈꢘꢂꢓꢓ
ꢇꢓ
%
ꢁꢁ * A11 % . %2/ * 3 0, %
41
A,
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢋꢍꢌ ꢅꢔꢑꢃꢋꢍꢋꢑꢃ
ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢚꢁ
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ!
(ꢁ * =, 7. $; * 0+, -ꢁ
D2ꢂꢍ * D2ꢂꢓꢓ * 66 H
,6I
++
ꢀ
ꢀ
ꢀ
"#$ ꢇꢉꢆꢕꢍꢂꢔꢂꢌ!
/ꢂꢍ ? /ꢂꢓꢓ
(ꢍꢈꢑꢆꢇꢋ&ꢉ ꢔꢂꢅꢈ
00
ꢃJ
%
ꢐꢋꢇꢕ ꢄꢂꢊꢋꢇꢋ&ꢉ ꢆꢂꢉꢓꢓꢋꢆꢋꢉꢍꢇ
ꢆꢉꢘꢊꢅꢇ
Inverse\Freewheeling CAL diode
Typical Applications
'ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ
(ꢍ&ꢉꢏꢇꢉꢏ
'ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
)#'
%@ * %/ꢁ
(@ * ,1 75 $; * +, ꢘ0+, -ꢁ
+ ꢘ0.4
%
%
%
$; * 0+, -ꢁ
0
0.+
++
ꢘ$ꢎ
ꢀ
ꢀ
ꢀ
ꢀ
ꢏ$
$; * 0+, ꢘ -ꢁ
0A
ꢃH
Dꢇꢕꢘ;<ꢊ
1.I
ECF
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG
(
(
@ * ,1 75 %D * A11 %
ꢈ(@Cꢈꢇ * <411 7CLꢊ
2/ * 1 %5 $; * 0+, -ꢁ
=1
4
7
DD8
Kꢏꢏ
Lꢁ
/
%
+
ꢃJ
ꢂꢓꢓ
Mechanical data
80
ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏMꢑꢉ
+.,
"ꢃ
ꢌ
ꢐ
+I
ꢁꢅꢊꢉ
'/8($ꢎ#N
6
$ +:
GB
1
19-10-2006 DIL
© by SEMIKRON
SK 60 GB 125
Fig.5 Typical output characteristic, Tj=25°C
Fig.6 Typical output characteristic, Tj=125°C
Fig.8 Turn-on / -off energy = f (RG)
Fig.10 Typ. capacitances vs. VCE
Fig.7 Turn-on / -off energy = f (IC)
Fig.9 Typ. gate charge characteristic
2
19-10-2006 DIL
© by SEMIKRON
SK 60 GB 125
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig. 14 Typ. CAL Diode forward characteristic
3
19-10-2006 DIL
© by SEMIKRON
SK 60 GB 125
UL Recognized
File no. E 63532
Dimensions in mm
ꢁꢅꢊꢉ $+:
2ꢚ
')22/'$/ꢙ ꢒꢎO/ꢙ(78/$/D @ꢎD $ꢒ/ 'ꢎOꢙ/D #("' 7"ꢙ $ꢒ/ 8ꢎ)"$("2 #("' (" $ꢒ/
#ꢁꢚG + ꢃꢃ
ꢁꢅꢊꢉ $+:
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2006 DIL
© by SEMIKRON
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