SKM400GAL125D [SEMIKRON]
Ultra Fast IGBT Modules; 超快速IGBT模块
| 型号： | SKM400GAL125D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Ultra Fast IGBT Modules |
| 文件： | 总4页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB125D
( 4 -5 6$ꢈ ꢌꢅꢇꢆꢍꢍ ꢉꢓꢃꢆꢔꢑꢏꢍꢆ ꢍꢕꢆꢂꢏꢙꢏꢆꢒ
Absolute Maximum Ratings
Symbol Conditions
ꢂ
Values
Units
IGBT
7$3ꢎ
*-..
:.. )+..,
ꢚ..
7
%
(ꢂ 4 -5 )9., 6$
ꢓꢕ 4 * ꢊꢍ
$
%
$2;
7<3ꢎ
= -.
7
(#>ꢈ )(ꢍꢓꢋ
,
(?@32%( ?ꢁ A (ꢍꢓꢋ
B :. CCC D *5. )*-5,
6$
7ꢏꢍꢉꢇ
%$ꢈ * ꢊꢏꢅC
:...
7
Inverse diode
TM
(ꢂ 4 -5 )9., 6$
+E. )-ꢚ.,
ꢚ..
%
%
SEMITRANS
3
!
ꢓꢕ 4 * ꢊꢍ
!2;
ꢓꢕ 4 *. ꢊꢍF ꢍꢏꢅCF (> 4 *5. 6$
-E..
%
!ꢎ;
Ultra Fast IGBT Modules
Freewheeling diode
(ꢂ 4 -5 )9., 6$
+E. )-ꢚ.,
ꢚ..
%
%
!
ꢓꢕ 4 * ꢊꢍ
!2;
SKM 400GB125D
SKM 400GAL125D
SKM 400GAR125D
ꢓꢕ 4 *. ꢊꢍF ꢍꢏꢅCF (> 4 *5. 6$
-E..
%
!ꢎ;
( 4 -5 6$ꢈ ꢌꢅꢇꢆꢍꢍ ꢉꢓꢃꢆꢔꢑꢏꢍꢆ ꢍꢕꢆꢂꢏꢙꢏꢆꢒ
Characteristics
Symbol Conditions
IGBT
ꢂ
min.
typ.
max. Units
7<3)ꢓꢃ,
7<3 4 7$3ꢈ $ 4 *- ꢊ%
:ꢈ5
5ꢈ5
ꢚꢈ5
7
ꢊ%
7
7<3 4 .ꢈ 7$3 4 7$3ꢎꢈ (> 4 -5 )*-5, 6$
(> 4 -5 )*-5, 6$
.ꢈ*5
.ꢈ:5
$3ꢎ
Features
7$3)(?,
ꢔ$3
*ꢈ: )*ꢈG,
ꢁ ꢂꢃꢄꢅꢅꢆꢇꢈ ꢃꢉꢊꢉꢋꢆꢅꢆꢉꢌꢍ ꢎꢏ
ꢐꢉꢑ ꢏꢅꢒꢌꢂꢓꢄꢅꢂꢆ ꢂꢄꢍꢆ
ꢎꢃꢉꢔꢓ ꢓꢄꢏꢇ ꢂꢌꢔꢔꢆꢅꢓ ꢑꢏꢓꢃ ꢇꢉꢑ
ꢓꢆꢊꢕꢆꢔꢄꢓꢌꢔꢆ ꢒꢆꢕꢆꢅꢒꢆꢅꢂꢆ
7<3 4 *5 7ꢈ (> 4 -5 )*-5, 6$
ꢊH
ꢀ
ꢀ
ꢀ
7$3)ꢍꢄꢓ,
$ꢅꢉꢊ 4 +.. %ꢈ 7<3 4 *5 7ꢈ ꢂꢃꢏꢕ ꢇꢆ#ꢆꢇ
+ꢈ+
+ꢈ95
7
$
ꢌꢅꢒꢆꢔ ꢙꢉꢇꢇꢉꢑꢏꢅꢋ ꢂꢉꢅꢒꢏꢓꢏꢉꢅꢍ
--
+ꢈ+
*ꢈ-
+.
:
ꢅ!
ꢅ!
ꢅ!
ꢅꢖ
ꢏꢆꢍ
$
7<3 4 .ꢈ 7$3 4 -5 7ꢈ ꢙ 4 * ;ꢖ1
ꢉꢆꢍ
ꢖꢏꢋꢃ ꢍꢃꢉꢔꢓ ꢂꢏꢔꢂꢌꢏꢓ ꢂꢄꢕꢄꢗꢏꢇꢏꢓꢘꢈ ꢍꢆꢇꢙ
$
*ꢈꢚ
-.
ꢀ
ꢔꢆꢍ
ꢇꢏꢊꢏꢓꢏꢅꢋ ꢓꢉ ꢚ ꢛ
ꢐ$3
ꢂꢅꢉꢊ
!ꢄꢍꢓ " ꢍꢉꢙꢓ ꢏꢅ#ꢆꢔꢍꢆ $%ꢐ ꢒꢏꢉꢒꢆꢍ
ꢍꢉꢇꢄꢓꢆꢒ ꢂꢉꢕꢕꢆꢔ ꢗꢄꢍꢆꢕꢇꢄꢓꢆ ꢌꢍꢏꢅꢋ
&'$ &ꢏꢔꢆꢂꢓ $ꢉꢕꢕꢆꢔ 'ꢉꢅꢒꢏꢅꢋ
(ꢆꢂꢃꢅꢉꢇꢉꢋꢘ
ꢐꢄꢔꢋꢆ ꢂꢇꢆꢄꢔꢄꢅꢂꢆ )*+ ꢊꢊ, ꢄꢅꢒ
2$$ID33I
ꢔꢆꢍCꢈ ꢓꢆꢔꢊꢏꢅꢄꢇBꢂꢃꢏꢕ (ꢂ4 -5 )*-5, 6$
.ꢈ+5 ).ꢈ5,
ꢊH
ꢀ
ꢀ
ꢓꢒ)ꢉꢅ,
ꢓꢔ
ꢓꢒ)ꢉꢙꢙ,
ꢓꢙ
7$$ 4 ꢚ.. 7ꢈ $ꢅꢉꢊ 4 +.. %
2<ꢉꢅ 4 2<ꢉꢙꢙ 4 - Hꢈ (> 4 *-5 6$
7<3 4 = *5 7
G.
5.
ꢅꢍ
ꢅꢍ
ꢅꢍ
ꢅꢍ
5..
+-
ꢀ
ꢂꢔꢆꢆꢕꢄꢋꢆ ꢒꢏꢍꢓꢄꢅꢂꢆꢍ )-. ꢊꢊ,
3ꢉꢅ )3ꢉꢙꢙ
,
*G )*9,
ꢊJ
Inverse diode
Typical Applications
7! 4 73$
!ꢅꢉꢊ 4 +.. %F 7<3 4 . 7F (> 4 -5 )*-5,
- )*ꢈ9,
-ꢈ5
7
ꢎꢑꢏꢓꢂꢃꢆꢒ ꢊꢉꢒꢆ ꢕꢉꢑꢆꢔ ꢍꢌꢕꢕꢇꢏꢆꢍ ꢄꢓ
6$
ꢀ
ꢙ
/-.0ꢖ1
7)(?,
ꢔ(
(> 4 -5 )*-5, 6$
(> 4 -5 )*-5, 6$
*ꢈ*
+
*ꢈ-
+ꢈ+
7
ꢊH
%
ꢍꢑ
2ꢆꢍꢉꢅꢄꢅꢓ ꢏꢅ#ꢆꢔꢓꢆꢔꢍ ꢌꢕ ꢓꢉ *.. 0ꢖ1
ꢅꢒꢌꢂꢓꢏ#ꢆ ꢃꢆꢄꢓꢏꢅꢋ
ꢀ
ꢀ
ꢀ
!ꢅꢉꢊ 4 +.. %F (> 4 *-5 ) , 6$
95 )*:.,
*+ ):.,
22;
Kꢔꢔ
3ꢔꢔ
ꢒꢏLꢒꢓ 4 %LMꢍ
7<3 4 . 7
M$
3ꢇꢆꢂꢓꢔꢉꢅꢏꢂ ꢑꢆꢇꢒꢆꢔꢍ ꢄꢓ ꢙ / -. 0ꢖ1
ꢍꢑ
ꢊJ
FWD
7! 4 73$
7)(?,
! 4 +.. %F 7<3 4 . 7ꢈ (> 4 -5 )*-5, 6$
- )*ꢈ9,
-ꢈ5
7
7
(> 4 -5 )*-5, 6$
(> 4 -5 )*-5, 6$
ꢔ(
ꢊH
%
! 4 +.. %F (> 4 *-5 ) , 6$
22;
Kꢔꢔ
3ꢔꢔ
ꢒꢏLꢒꢓ 4 %LMꢍ
M$
7<3 4 . 7
ꢊJ
Thermal characteristics
2ꢓꢃ)>Bꢂ,
ꢕꢆꢔ <'(
.ꢈ.5
.ꢈ*-5
.ꢈ*-5
NLO
NLO
NLO
2ꢓꢃ)>Bꢂ,&
2ꢓꢃ)>Bꢂ,!&
ꢕꢆꢔ ꢅ#ꢆꢔꢍꢆ &ꢏꢉꢒꢆ
ꢕꢆꢔ !O&
2ꢓꢃ)ꢂBꢍ,
ꢕꢆꢔ ꢊꢉꢒꢌꢇꢆ
.ꢈ.+9
NLO
Mechanical data
;
ꢓꢉ ꢃꢆꢄꢓꢍꢏꢅ0 ;ꢚ
+
5
5
ꢁꢊ
ꢁꢊ
ꢍ
;
ꢓꢉ ꢓꢆꢔꢊꢏꢅꢄꢇꢍ ;ꢚ
-ꢈ5
GB
GAL
GAR
ꢓ
ꢑ
+-5
ꢋ
1
20-09-2005 RAA
© by SEMIKRON
SKM 400GB125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
20-09-2005 RAA
© by SEMIKRON
SKM 400GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
3
20-09-2005 RAA
© by SEMIKRON
SKM 400GB125D
UL Recognized
Dimensions in mm
File no. E 63 532
<'
$ꢄꢍꢆ & 5ꢚ
$ꢄꢍꢆ & 5G )P & 5ꢚ,
$ꢄꢍꢆ & 59 )P & 5ꢚ ,
<%ꢐ
<%2
$ꢄꢍꢆ & 5ꢚ
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
20-09-2005 RAA
© by SEMIKRON
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