SKM75GB12V [SEMIKRON]
Target Data; 目标数据
| 型号： | SKM75GB12V |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Target Data |
| 文件： | 总3页 (文件大小：385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM75GB12V
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
121
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
91
ICnom
75
ICRM
ICRM = 3xICnom
225
VGES
-20 ... 20
SEMITRANS® 2
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
97
73
A
A
Tj = 175 °C
SKM75GB12V
IFnom
IFRM
IFSM
Tj
75
A
Target Data
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
225
A
Features
• VCE(sat) with positive temperature
coefficient
430
A
-40 ... 175
°C
Module
It(RMS)
Tstg
• High short circuit capability, self
limiting to 6 x Icnom
200
-40 ... 125
4000
A
°C
V
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
IC = 75 A
VCE(sat)
Tj = 25 °C
1.85
2.25
2.3
V
V
V
GE = 15 V
Tj = 150 °C
2.45
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.94
0.88
12.1
18.3
6.5
1.25
1.22
14.0
16.4
7
V
V
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 3 mA
VGE = 0 V
6
Tj = 25 °C
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
0.1
0.3
mA
mA
nF
nF
nF
nC
Ω
V
CE = 1200 V
Cies
Coes
Cres
QG
4.5
0.44
0.442
780
VCE = 25 V
GE = 0 V
V
RGint
td(on)
tr
10.0
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
VCC = 600 V
IC = 75 A
ns
V
GE = ±15 V
Eon
td(off)
tf
7.5
6
mJ
ns
R
R
G on = 1.3 Ω
G off = 1.3 Ω
ns
Eoff
Rth(j-c)
mJ
K/W
per IGBT
0.38
GB
© by SEMIKRON
Rev. 0 – 23.12.2009
1
SKM75GB12V
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 75 A
VF = VEC
Tj = 25 °C
2.2
2.1
2.5
2.4
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.3
0.9
1.5
1.1
V
V
11.6
16.1
37
13.2
17.6
mΩ
mΩ
A
SEMITRANS® 2
IF = 75 A
di/dtoff = 990 A/µs
IRRM
Qrr
12.6
µC
V
V
GE = ±15 V
CC = 600 V
Tj = 150 °C
Err
4.7
mJ
Rth(j-c)
per diode
0.58
30
K/W
Module
LCE
SKM75GB12V
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
Target Data
TC = 25 °C
RCC'+EE'
0.65
1
terminal-chip
TC = 125 °C
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Rth(c-s)
Ms
per module
0.04
0.05
5
to heat sink M6
3
to terminals M5
Mt
2.5
5
w
160
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
GB
2
Rev. 0 – 23.12.2009
© by SEMIKRON
SKM75GB12V
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 23.12.2009
3
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