ST2N5400 [SEMTECH]
PNP Silicon Epitaxial Planar Transistors; PNP硅外延平面晶体管
| 型号： | ST2N5400 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistors |
| 文件： | 总3页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2N5400 / 2N5401
PNP Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier applications.
As complementary types the NPN transistors
ST 2N5550 and ST 2N5551 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25oC)
Symbol
-VCEO
-VCEO
-VCBO
-VCBO
-VEBO
-IC
Value
Unit
V
Collector Emitter Voltage
Collector Base Voltage
ST 2N5400
ST 2N5401
ST 2N5400
ST 2N5401
120
150
V
130
V
160
V
Emitter Base Voltage
Collector Current
5
V
600
mA
mW
oC
oC
Power Dissipation
Ptot
6251)
Junction Temperature
Storage Temperature Range
Tj
150
TS
-55 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
ST 2N5400 / 2N5401
Characteristics at Tamb=25 oC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
ST 2N5400
ST 2N5401
ST 2N5400
ST 2N5401
ST 2N5400
ST 2N5401
hFE
hFE
hFE
hFE
hFE
hFE
30
50
40
60
40
50
-
-
-
-
-
-
-
-
-
-
-
-
-
at-VCE=5V, -IC=1mA
-
180
240
-
at -VCE=5V, -IC=10mA
at -VCE=5V, -IC=50mA
-
Collector Emitter Breakdown Voltage
-V(BR)CEO
-V(BR)CEO
120
150
-
-
-
-
V
V
at -IC=1mA
ST 2N5400
ST 2N5401
Collector Base Breakdown Voltage
-V(BR)CBO
-V(BR)CBO
130
160
-
-
-
-
V
V
at -IC=100μA
ST 2N5400
ST 2N5401
Emitter Base Breakdown Voltage
at -IE=10μA
-V(BR)EBO
5
-
-
V
Collector Cutoff Current
at -VCB=100V
ST 2N5400
ST 2N5401
-ICBO
-ICBO
-
-
-
-
100
50
nA
nA
at -VCB=120V
Emitter Cutoff Current
at -VEB=3V
-IEBO
-
-
50
nA
Collector Saturation Voltage
at -IC=10mA, -IB=1mA
at -IC=50mA, -IB=5mA
Base Saturation Voltage
at -IC=10mA, -IB=1mA
at -IC=50mA, -IB=5mA
Gain Bandwidth Product
-VCE sat
-VCE sat
-
-
-
-
0.2
0.5
V
V
-VBEsat
-VBEsat
-
-
-
-
1
1
V
V
at -VCE=10V,-IC=10mA,f=100MHz ST 2N5400
ST 2N5401
fT
fT
100
100
-
-
400
400
MHz
MHz
Collector Base Capacitance
at -VCB=10V, f=1MHz
CCBO
-
-
6
pF
Noise Figure
F
-
-
-
-
8
at -VCE=5V,-IC=200μA,RG=2kΩ,f=30HZ…15kHZ
Thermal Resistance Junction to Ambient
dB
RthA
2001)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
ST 2N5400 / 2N5401
Ptot-Ta
IC - VBE
Ambient Temperature Ta ( ℃ )
Base Emitter Voltage VBE (V)
V C E ( s a t ) , V B E ( s a t ) - I C
f T - I C
VBE(sat)
VCE(sat)
C o l l e c t o r C u r r e n t IC ( m A )
C o l l e c t o r C u r r e n t IC ( m A )
Cob - VCB
Collector Base Voltage VCB (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated: 07/12/2002
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