MWI50-12E6K [SENSITRON]
IGBT Module Sixpack; IGBT模块Sixpack
| 型号： | MWI50-12E6K |
| 厂家： | 
SENSITRON |
| 描述： | IGBT Module Sixpack |
| 文件： | 总2页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
MWI 50-12 E6K
IC25
VCES
VCE(sat) typ. = 2.4 V
= 51 A
= 1200 V
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
10, 23
14
18
17
22
21
8
7
13
11, 12
15, 16
19, 20
NTC
4
3
2
1
6
5
9, 24
Features
• NPT3 IGBTs
IGBTs
Symbol
VCES
Conditions
Maximum Ratings
- low saturation voltage
- positive temperature coefficient for
easy paralleling
TVJ = 25°C to 150°C
1200
20
V
- fast switching
VGES
V
- short tail current for optimized
performance also in resonant
circuits
IC25
IC80
TC = 25°C
TC = 80°C
51
36
A
A
• HiPerFREDTM diode:
ICM
VCEK
VGE = 15 V; RG = 39 Ω; TVJ = 125°C
RBSOA; clamped inductive load; L = 100 µH
70
VCES
A
µs
W
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
tSC
VCE = 900 V; VGE = 15 V; RG = 39 Ω; TVJ = 125°C
SCSOA; non-repetitive
10
Ptot
TC = 25°C
210
Symbol
VCE(sat)
Conditions
Characteristic Values
Typical Applications
(TVJ = 25°C, unless otherwise specified)
• AC drives
• power supplies with power factor
correction
min.
typ. max.
IC = 35 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.4
2.8
2.9
V
V
VGE(th)
ICES
IC = 1 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.3 mA
mA
1.2
IGES
VCE = 0 V; VGE
=
20 V
200 nA
td(on)
tr
td(off)
tf
Eon
Eoff
90
50
440
50
5.4
2.6
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = 15 V; RG = 39 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 35 A
2000
150
pF
nC
RthJC
RthCH
(per IGBT)
0.6 K/W
K/W
0.2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1 - 2
Advanced Technical Information
MWI 50-12 E6K
Diodes
Symbol
Equivalent Circuits for Simulation
Conduction
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
49
32
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IGBT (typ. at VGE = 15 V; TJ = 125°C)
IF = 35 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.6
1.8
2.9
V
V
V0 = 1.0 V; R0 = 44 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
IRM
trr
35
150
A
ns
IF = 35 A; diF/dt = -600 A/µs; TVJ = 100°C
VR = 600 V; VGE = 0 V
V0 = 1.5 V; R0 = 14 mΩ
RthJC
RthCH
(per Diode)
0.9 K/W
K/W
Thermal Response
0.3
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
R25
B25/85
T = 25°C
4.45
4.7
3510
5.0 kΩ
IGBT (typ.)
K
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
Module
Symbol
Free Wheeling Diode (typ.)
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
Conditions
Maximum Ratings
TVJ
TVJM
Tstg
operating
-40...+125
-40...+150
-40...+125
°C
°C
°C
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
Mounting torque (M4)
2.0 - 2.2
Nm
Symbol
Conditions
Characteristic Values
Dimensions in mm (1 mm = 0.0394")
min.
typ. max.
dS
dA
Creepage distance on surface
Strike distance in air
12.7
12.7
mm
mm
Weight
40
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
2 - 2
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