SPM6G140-060D-B [SENSITRON]
Insulated Gate Bipolar Transistor;
| 型号： | SPM6G140-060D-B |
| 厂家： | 
SENSITRON |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总12页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic
Isolation
DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 500uA, VGE = 0V
BVCES
600
-
-
-
V
A
Continuous Collector Current
TC = 25 OC
TC = 80 OC
Zero Gate Voltage Collector Current (For the module)
CE = 600 V, VGE=0V Ti=25oC
CE = 480 V, VGE=0V Ti=125oC
IC
-
140
140
ICES
-
-
V
2
mA
mA
V
15
Collector to Emitter Saturation Voltage,
IC = 90A, VGE = 15V,
Tj = 25 OC
Tj = 125 OC
VCE(SAT)
-
1.5
1.8
8.2
1.8
V
IGBT Internal Turn On Gate Resistance
IGBT Internal Turn Off Gate Resistance
-
-
-
-
-
-
-
-
Ohm
Ohm
Ohm
mJ
6.2
100
1.5
IGBT Internal Soft Shutdown Turn Off Gate Resistance
IGBT turn-on switching loss
V
CE = 300 V, IC = 50A Tj=25oC
IGBT turn-off switching loss
-
-
2.1
5
-
-
mJ
VCE = 300 V, IC = 50A Tj=25oC
Short Circuit Withstand Time, Conditions 300V DC link,
VGE=15V, Tjstart < 150 OC
usec
DC Bus Voltage Rate of Rise With 15V Supply Removed,
dv/dt
-
-
-
-
20
V/usec
oC/W
Junction To Case Thermal Resistance
0.22
RθJC
MODULE TOTAL WEIGHT
Total Weight
-
-
13
OZ
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 1
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Brake IGBT SPECIFICATIONS
Continuous Collector Current
TC = 25 OC
TC = 90 OC
IC
-
-
80
80
A
(Limited by Terminals)
Pulsed Collector Current, 0.5mS
ICM
-
-
200
A
IGBT Internal Gate Resistance
-
-
-
10
10
-
-
-
Ohm
K Ohm
IGBT Internal Gate Shunt Resistance
Junction To Case Thermal Resistance
0.28
oC/W
RθJC
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage
Continuous Forward Current, TC = 90 OC
PIV
IF
600
-
-
-
V
A
-
-
-
140
1.6
300
Diode Forward Voltage,
IF = 90A
VF
trr
1.4
200
V
Diode Reverse Recovery Time
nsec
(IF=80A, VRR=300V , di/dt = 1500 A/μs)
Diode switching loss
-
-
0.3
-
-
mJ
VCE = 300 V, IF = 50A Tj=25oC
Junction To Case Thermal Resistance
0.35
oC/W
RθJC
MODULE STORAGE AND OPERATING CONDITIONS
Operating Junction Temperature
Storage Ambient Temperature
Operating Case Temperature
Operating Ambient Temperature
Operating Altitude
Tj
-40
-55
-40
-40
-
-
150
150
85
oC
oC
oC
oC
Ft
TStorage
Tc
-
-
-
TA
105
-
50000
Vibration and shock requirements (1)
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 2
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Gate Driver
Supply Voltage, limits apply to Vcc
Vcc
14
15
0.3VDD
0.7VDD
12.2
11.8
12
16
V
V
Magnetic -Isolator Logic Low Input Threshold
ViL
-
-
Magnetic -Isolator Logic High Input Threshold
Under Voltage Lockout, positive going threshold Vcc,
Under Voltage Lockout, negative going threshold Vcc
Internal Bootstrap Capacitor Value
ViH
-
-
V
VCCUV
VCCUV
11.8
12.7
V
11.3
12.2
V
-
-
-
-
-
-
uF
V
Desaturation Detection, High Input Threshold Voltage
Desaturation Detection, Low Input Threshold Voltage
8.0
7.0
V
tond
tr
toffd
tf
-
-
-
-
650
100
800
200
nsec
Logic Input to Phase Output Turn On Delay
Output Turn On Rise Time
Logic Input to Phase Output Turn Off Delay
Output Turn Off Fall Time
800
150
1200
200
at VCC=600V, IC=50A, TC = 25
Dead Time Requirement, for Shoot Through Prevention
Magnetic -Isolator Operating Input Common Mode Voltage
Magnetic -Isolator Operating Input Common Mode Transient
750
1000
-
nsec
V
-
-
-
-
1000
15
KV/usec
Module Isolation
Gnd2 Isolation To Phase Lines, and to Gnd1
-
2500
2500
-
-
-
-
VDC
VDC
(Device will be tested at 3000V for 10 seconds), leakage less
than 10uA
Pin-To-Case Isolation Voltage, DC Voltage
(Device will be tested at 3000V for 10 seconds), leakage less
than 10uA
4.75
5
-
5.25
30
V
+5V output, power supply
Referenced to Gnd1
-
mA
Maximum load current
+5V Input, Isolated power supply (2)
VDD
4.75
5
5.25
V
Referenced to Gnd2
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 3
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Base Plate Temperature (2)
Base Plate Temperature Sensor Output Gain
Referenced to Gnd2
Tco
-
-
-
6.25
424
-
-
-
mV/oC
Temperature Sensor Output DC Offset, at TC=25oC
Referenced to Gnd2
mV
oC
Accuracy, at temperature range from - 40 oC to 125oC
+/-4.0
DC Bus Current Sensor (Bi-directional Output)
Shunt Resistor Value
-
-
0.50
-
mOhm
V/A
Current Amplifier Gain, measured at Pin 22 and
Referenced to Gnd1 (Non-isolated output)
0.0023
0.0026
0.0030
10
Current Amplifier DC Offset (Zero DC Bus Current),
measured at Pin 22
-10
0
mV
Over-Current Set Point
75
85
120
A
Isolated PWM fixed frequency output at Pin 17
100
130
180
KHz
Isolated PWM output Duty cycle at Pin 17
-
-
-
-
91%
9%
, AT + 82 A
, AT - 82 A
Phase A, Phase B, and Phase C Current Sensors (Bi-directional Output) (2)
Current Amplifier Gain
+/-
0.0160
+/-0.0175
+/-
0.0195
V/A
V
Referenced to Gnd2
Output DC Reference at Pins 1, 3, 5
VDD/2
- 0.04
- 0.02
VDD/2
VDD/2
+0.04
+0.02
Current Amplifier DC Offset (Zero Phase Current)
Measured between Pins (1,2), (3,4), (5,6)
0
V
Offset temperature Drift mV/oC, Ta = -40oC to 125oC
-0.3
-
0
+0.3
-
mV/oC
A
Maximum Current Measurement Range
+/-110
(1) Unit is designed to meet Vibration and Shock requirements, Mil-STD-810F shall be used. (514.5 and 516.5
methods respectively).
(2) Phase current sensors and base plate temperature sensor are floating sensors referenced to Gnd2. An isolated
5V power supply shall be used to power these sensors.
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 4
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Pinout
Pin
#
Function
Pin #
Function
1
ICd
18
VDD
DC offset of VDD/2 +/- 0.040V for Differential
Output Reading of Output at Pin 2
+5V Input
2
3
ICo, Phase C Current Sensor output
19
20
Return for all Input/outputs at Pins 1 to 18
(Signal Ground, Gnd2)
IBd
Isolated SD Input
DC offset of VDD/2 +/- 0.040V for Differential
Output Reading of Output at Pin 4
4
5
IBo, Phase B Current Sensor output
IAd
21
Itrip-Ref 1
DC offset of VDD/2 +/- 0.040V for Differential
Output Reading of Output at Pin 6
Adjustable Reference for over-Current Shutdown
6
7
IAo, Phase A Current Sensor output
22
23
Itrip-Ref 2
Adjustable Reference for over-Current Shutdown
+5V Output
TCo
Case Temperature Output with a gain of 6.25
mV/oC
8
9
Isolated Input for Low-side IGBT of Phase A
Isolated Input for High-side IGBT of Phase A
Isolated Input for Low -side IGBT of Phase B
24
25
+15V Rtn (Signal Ground, Gnd1)
+15V Input
10
26,27
Brake Terminal. Brake Resistor Shall be Connected
Between These Terminals and +VDC
11
Isolated Input for High-side IGBT of Phase B
28
Brake IGBT Gate Input
Brake IGBT Emitter input is internally connected to
DC Bus return
12
13
14
15
16
17
Isolated Input for Low-side IGBT of Phase C
Isolated Input for High-side IGBT of Phase C
Isolated Flt Clear Input
29 to 32
33 to 36
37 to 39
40 to 42
43 to 45
DC Bus return
DC Bus “+VDC” input
Phase C output
Isolated SD output
Phase B output
Isolated Flt output
Phase A output
Isolated Idco output
Case
Isolated
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 5
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
+15V
+15V-Rtn
Signal Ground
Gnd1
+VDC
LIN-A
HIN-A
LIN-B
Lin-A
Gnd2
+5V-in
Hin-A
Magnetic
PH-A
Lin-B
Hin-B
Lin-C
Isiolation
IAo = 2.5V
+/- 0.0175 IA
IAd = 2.5V
HIN-B
LIN-C
HIN-C
Flt-CLr
Flt
Encoder/
Decoder
Hin-C
+5V-in Gnd2
Flt-CLr
PH-B
SD Out
Flt
IBo = 2.5V
+/- 0.0175
SD
IBd = 2.5V
Idco
Gnd2
+5V-in
+5V-in
Gnd2
PH-C
ICo = 2.5V
+/- 0.0175 IC
ICd = 2.5V
SD Input
+5V-out
Analog to PWM
130KHz
BRK
G-Brk
10Ω
10KΩ
To-SD
R1
1KΩ
G=6.32
0.0005Ω
E-Brk
I trip-Ref 1
I trip-Ref 2
+VDC
Rtn
1nF
R2
5KΩ
5KΩ
Heat-Sink
Temperature
Sensor
TCo
10nF
Gnd2
Fig. 1. Block Diagram
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 6
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Figure 2. Mechanical Outline
Figure 3. Device Pinout and Marking
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 7
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Normalized Thermal Impedance Curves for Both IGBTs and Diodes
D = 0.50
D = 0.20
D = 0.10
D = 0.05
SINGLE PULSE
(THERMAL RESPONSE)
Figure 4. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
SINGLE PULSE
(THERMAL RESPONSE)
Figure 5. Normalized Transient Thermal Impedance, Junction-to-Case (Diode)
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 8
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Pin Descriptions
ICd (Pin 1 ) : A +2.5V DC offset used for differential output reading of ICo.
ICo (Pin 2): Hall current sensor output for phase C. The output can be measured between Pin2 and Pin 1
differentially. Zero current corresponds to zero output, current entering Phase C pins will produce positive output
voltage at Pin2, and current out of Phase C pins will produce negative output voltage at Pin2. Also, the output can
be measured as single ended between Pin2 and Pin19. In this case zero current will correspond to 2.5V output,
current entering Phase C pins will produce positive output voltage above 2.5V, and current out of Phase C pins will
produce positive output voltage below 2.5V.The sensitivity of this sensor is 0.018V/A.
IBd (Pin 3): A +2.5V DC offset used for differential output reading of IBo.
IBo (Pin 4): Hall current sensor output for phase B. The output can be measured between Pin4 and Pin 3
differentially. Zero current corresponds to zero output, current entering Phase B pins will produce positive output
voltage at Pin4, and current out of Phase B pins will produce negative output voltage at Pin4. Also, the output can
be measured as single ended between Pin4 and Pin19. In this case zero current will correspond to 2.5V output,
current entering Phase B pins will produce positive output voltage above 2.5V, and current out of Phase B pins will
produce positive output voltage below 2.5V. The sensitivity of this sensor is 0.018V/A.
IAd (Pin 5): A +2.5V DC offset used for differential output reading of IAo.
IAo (Pin 6 ): Phase A hall current sensor output. The output can be measured between Pin6 and Pin 5 differentially.
Zero current corresponds to zero output, current entering Phase A pins will produce positive output voltage at Pin6,
and current out of Phase A pins will produce negative output voltage at Pin6. Also, the output can be measured as
single ended between Pin6 and Pin19. In this case zero current will correspond to 2.5V output, current entering
Phase A pins will produce positive output voltage above 2.5V, and current out of Phase A pins will produce positive
output voltage below 2.5V. The sensitivity of this sensor is 0.018V/A.
TCo (Pin 7 ): An analog output of case temperature sensor. The sensor output gain is 6.25mV/oC, with 424 mV DC
offset. This sensor can measure both positive and negative oC. The internal impedance of this output is 4.99KΩ. The
internal block diagram of the temperature sensor is shown in Fig. 6.
4.99KΩ
Pin 7
Vo= (+6.25mV/oC )*ToC + 424 mV
10nF
Pin 19
Gnd2
Fig. 6 Temperature Sensor Internal Block Diagram
The output voltage reading vs temperature will be:
TCo = + 0.58V at Tc= +25oC
TCo = + 1.205V at Tc= +125oC
TCo = + 0.174V at Tc= -40oC
LinA (Pin 8) : An isolated drive input for Low-side IGBT of Phase A.
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 9
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
HinA (Pin 9): An isolated drive input for High-side IGBT of Phase A.
LinB- (Pin 10): An isolated drive input for Low-side IGBT of Phase B.
HinB (Pin 11): An isolated drive input for High-side IGBT of Phase B.
LinC (Pin 12): An isolated drive input for Low-side IGBT of Phase C.
HinC (Pin 13): An isolated drive input for High-side IGBT of Phase C.
Flt-Clr(Pin 14): A fault clear input. It can be used to reset a latching fault condition, due to desaturation protection.
Pin 14 an active high input. It is internally pulled down by 20.0KΩ. A latching fault due to desaturation can be cleared by
pulling this input high to +5V. It is recommended to activate fault clear input for more than 500 μsec at startup. To
charge boot-strap circuit at startup, it is recommended to turn on all low-side switches for 500 μsec while Flt-
Clr is active.
SD Out (Pin 15): Is internally activated due to desaturation protection, over-current shutdown, or under voltage
lockout. Desaturation shutdown is a latching feature. SD Out can be used as a fault condition output. A continuous
low output at SD out indicates a latching fault situation.
Flt (Pin 16): Is internally pulled down by 20.0KΩ. Pin 16, reports desaturation protection activation. When
desaturation protection is activated a low output for about 9 μsec is reported. If any other protection feature is
activated, it will not be reported by Pin 16.
Idco (Pin 17): Is DC bus bi-directional current sense output. The sensor output is isolated. It is a PWM signal with fixed
frequency and variable duty cycle. The PWM frequency is 130 KHz. The maximum duty cycle is 91%,
corresponding to 82 A. Minimum duty cycle is 9%, corresponding to –82A.
VDD, +5V-in (Pin 18): The +5V input biasing supply connection for the phase current sensors, magnetic isolators,
and temperature sensor. Pin 18 should be connected to an isolated 5V power supply, recommended limits are
4.75V to 5.25V. The return of this input is pin 19. Recommended power supply capability for VDD is about
50mA.
Gnd2 (Pin 19): The signal ground for +5V-in,. This pin is internally floating for flexibility. The phase current sensors and
temperature sensor are referenced to Gnd2. Gnd2 isolation from Gnd1 is over 2500V.
SD Input (Pin 20): The SD input. A high input will disable all gate drive signals. This input is internally pulled high to
+5V by 20 K ohms.
Itrip-Ref1 (Pin 21): An adjustable voltage divider reference for over-current shutdown.
Itrip-Ref2 (Pin 22): An adjustable voltage divider reference for over-current shutdown. The internal set point over-
current shutdown is 82A. The re-start delay time is about 0.50 msec. +5V Output ( Pin 23 ), is a +5V output.
Maximum output current is 30mA.
Gnd1 (Pin 24) :The signal ground for +15V-in,. This pin is internally connected to DC Bus return. No external
connection shall be established between Signal Gnd1 and +VDC Rtn. Gnd1 is isolated from Gnd2. Note that
Pins 21 to 23 are referenced to Gnd1.
+15V-in (Vcc) (Pin 25): The +15V input biasing supply connection for the controller. Under-voltage lockout keeps
all outputs off for Vcc below 11.5V. Vcc pin should be connected to an isolated 15V power supply. Vcc
recommended limits are 14V to 16V , and shall not exceed 18V. The return of Vcc is pin 24. Recommended
power supply capability is about 70mA.
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 10
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Brk ( Pins 26,27 ), is Brake Terminal. Brake Resistor shall be connected between these terminals and +VDC. If the
brake resistor is inductive, a freewheeling diode shall be connected across this resistor.
Gbrk ( Pin 28 ), is Brake IGBT Gate Input. Brake IGBT Emitter is internally connected to DC Bus return.
+VDC Rtn ( Pins 29 to 32 ), is DC Bus return.
+VDC (Pins 33 to 36 ), is +DC Bus input.
PhC (Pins 37 to 39 ), is Phase C output.
PhB (Pins 40 to 42 ), is Phase B output.
PhA (Pins 43 to 45 ), is Phase A output.
A- DC Bus Charging from 15V
D1
Vcc
+15V
D2
R1
DS
DS
+VDC
100KΩ
R2
100KΩ
Q1H
Q1L
700
KΩ
VB
PhA
D3
700
KΩ
Gate
Driver
+15V Rtn
Sgnl Gnd1
+VDC Rtn
Figure 7. Charging Path from 15V Supply to DC Bus when DC Bus is off
•
•
•
•
Each IGBT is protected against desaturation.
D2 is the desaturation sense diode for the high-side IGBT
D3 is the desaturation sense diode for the low-side IGBT
When the DC bus voltage is not applied or below 15V, there is a charging path from the 15V supply to
the DC bus through D2 and D3 and the corresponding pull up 100K Ohm resistor. The charging current
is 0.15mA per IGBT. Total charging current is about 1.5mA.
•
Do not apply PWM signal if the DC bus voltage is below 20V.
B- Bias For Desaturation Detection Circuit:
The desaturation detection is done by diode D2 for the high side IGBT Q1H, and by diode D3 for the low side
IGBT Q1L. The internal detection circuit, input DSH for the high-side and input DSL for the low-side, is
biased by the local supply voltage VCC for the low side and VBS for the high side. When the IGBT is on the
corresponding detection diode is on. The current flowing through the diode is determined by the internal pull
resistor, R1 for the high side and R2 for the low side. To minimize the current drain from VCC and VBS, R1
and R2 are set to be 100KΩ. Lower value of R1 will overload the bootstrap circuit and reduce the bootstrap
capacitor holding time.
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 11
SENSITRON
SPM6G140-060D
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 4977, Rev. B
Cleaning Process:
Suggested precaution following cleaning procedure:
If the parts are to be cleaned in an aqueous based cleaning solution, it is recommended that the parts be baked
immediately after cleaning. This is to remove any moisture that may have permeated into the device during the
cleaning process. For aqueous based solutions, the recommended process is to bake for at least 2 hours at 125oC.
Do not use solvents based cleaners.
Recommended Soldering Procedure:
Signal pins 1-25: 210C for 10 seconds max
Power pins 26-45: 260C for 10 seconds max. Pre-warm module to 125C to aid in power pins soldering.
Ordering Information:
SPM6G140-060D is a standard product with all the features listed in the data sheet.
A, is a standard product with all the features listed in the data sheet except Pins 26, 27,28 are removed. The
associated circuits with these Pins are removed.
B, is a standard product with all the features listed in the data sheet except Pins 17,21,22,26, 27,28 are
removed or not connected. The associated circuits with these Pins are removed.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2004 Sensitron Semiconductor • 221 West Industry Court ꢀ Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798 • www.sensitron.com • sales@sensitron.com • Page 12
相关型号：
SPM6M020-060D
Three-Phase MOSFET BRIDGE With Gate Driver and Optical Isolation 600 VOLT 20 AMP
SENSITRON
©2020 ICPDF网 联系我们和版权申明