SGM2528 [SGMICRO]
5A, 12V Electronic Fuse (eFuse) with Thermal Shutdown;
| 型号： | SGM2528 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | 5A, 12V Electronic Fuse (eFuse) with Thermal Shutdown |
| 文件： | 总15页 (文件大小：726K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM2528
5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
GENERAL DESCRIPTION
FEATURES
The SGM2528 is a compact electronic fuse (eFuse)
with a complete set of protection functions. The wide
operating voltage range is specifically designed for
many popular DC buses. The SGM2528 provides
excellent accuracy, making it very suitable for many
system protection applications.
● Wide Input Voltage Range from 9V to 18V with
Surge up to 30V
● Extremely Low RDS(ON) for the Integrated
Protection Switch: 26mΩ (TYP)
● 3-State ENABLE/FAULT Pin, Bidirectional Interface
● Programmable Soft-Start Time
● Programmable Current Limit up to 5A
● Thermal Shutdown Options:
It provides accurate over-voltage (OV) and under-
voltage lockout (UVLO) protections, which ensure tight
supervision of bus voltages and eliminate the need for
supervisor circuits. The over-voltage (OV) protection
will clamp the eFuse output at a fixed level during input
voltage surges. During the input voltage transient, the
internal FET remains on, which allows the load to
continue to operate. If the transient duration remains
long, the accumulated heat will cause the eFuse
thermal shutdown. Once in thermal shutdown, latch-off
and auto-retry thermal options are available.
SGM2528A: Thermal Latch-Off with VCLAMP
SGM2528B: Thermal Auto-Retry with VCLAMP
SGM2528C: Thermal Latch-Off without VCLAMP
● Fault Output for Thermal Shutdown
● Accurate Under-Voltage Lockout
● Accurate Over-Voltage Clamp (SGM2528A and
SGM2528B)
● Available in a Green TDFN-3×3-10L Package
APPLICATIONS
The SGM2528 is available in a Green TDFN-3×3-10L
package.
Hard Drives
PCIE SSD
Motherboard Power Management
SG Micro Corp
OCTOBER 2022 – REV. A. 2
www.sg-micro.com
5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SGM
2528AD
XXXXX
SGM
2528BD
XXXXX
SGM
SGM2528A
SGM2528B
SGM2528C
TDFN-3×3-10L
TDFN-3×3-10L
TDFN-3×3-10L
SGM2528AXTD10G/TR
Tape and Reel, 4000
Tape and Reel, 4000
Tape and Reel, 4000
-40℃ to +125℃
-40℃ to +125℃
-40℃ to +125℃
SGM2528BXTD10G/TR
SGM2528CXTD10G/TR
2528CD
XXXXX
MARKING INFORMATION
NOTE: XXXXX = Date Code, Trace Code and Vendor Code.
X X X X X
Vendor Code
Trace Code
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
OVERSTRESS CAUTION
ABSOLUTE MAXIMUM RATINGS
Operating Input Voltage Range (VCC to GND) (1)
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
Steady-State .................................................. -0.3V to 18V
Transient (100ms).......................................... -0.6V to 25V
V
CC, SOURCE, ILIMIT to GND.............................. -0.3V to 25V
dV/dt, ENABLE/FAULT to GND........................ -0.3V to 5.5V
Package Thermal Resistance
TDFN-3×3-10L, θJA .................................................. 90℃/W
TDFN-3×3-10L, θJB .................................................. 54℃/W
TDFN-3×3-10L, θJC .................................................. 52℃/W
Junction Temperature.................................................+150℃
Storage Temperature Range.......................-65℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
HBM.............................................................................2000V
CDM ............................................................................1000V
NOTE: 1. Negative voltages can be withstood by the device
without damage as long as the power dissipation is limited to
the power rating allowed by the package.
DISCLAIMER
SG Micro Corp reserves the right to make any change in
RECOMMENDED OPERATING CONDITIONS
circuit design, or specifications without prior notice.
Operating Junction Temperature Range......-40℃ to +125℃
SG Micro Corp
www.sg-micro.com
OCTOBER 2022
2
5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
PIN CONFIGURATION
(TOP VIEW)
1
2
3
4
5
10
9
GND
dV/dt
SOURCE
SOURCE
SOURCE
SOURCE
SOURCE
VCC
8
ENABLE/FAULT
7
ILIMIT
NC
6
TDFN-3×3-10L
PIN DESCRIPTION
PIN
1
NAME
GND
FUNCTION
Ground.
Internal dV/dt Circuit. Leaving this pin open will allow the device to ramp up in 2ms. An
external capacitor between this pin and GND will set the slew rate according to the
application requirements.
2
dV/dt
Enable or Fault Pin. This pin is a 3-state, bidirectional interface. Asserting ENABLE/FAULT
pin high enables the device. When the thermal shutdown occurs, the device sinks current
from ENABLE/FAULT, and pulls the pin low to alert the host (this pin is used as output
port).
ENABLE/
FAULT
3
Current Limit Pin. This pin is used to set the overload and short-circuit current limit levels by
placing a resistor.
4
5
ILIMIT
NC
No Connection.
6 - 10
SOURCE
VCC
Power Output Pins.
Exposed
Pad
Power Input Pin. Power input and supply voltage of the device.
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OCTOBER 2022
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
ELECTRICAL CHARACTERISTICS
(TJ = +25℃, VCC = 12V and dV/dt pin is open, unless otherwise noted.)
PARAMETER
Power FET
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Delay Time
tDLY
Enabling of chip to ID = 100mA with 1A resistive load
TJ = +25℃
386
26
38
20
5
µs
21
31
Kelvin On-Resistance
RDS(ON)
mΩ
TJ = +135℃
Off-State Output Voltage
Continuous Current
Thermal Latch
VOFF
ID
VCC = 18V, VGS = 0V, RL = ∞
200
mV
A
Shutdown Temperature
TSD
158
22
℃
℃
Decrease in die temperature for turn-on; does not
apply to latch-off options.
Thermal Hysteresis
THYST
Under/Over-Voltage Protection
Output Clamping Voltage
Under-Voltage Lockout
UVLO Hysteresis
VCLAMP
VUVLO
VHYST
Over-voltage protection, VCC = 18V
Turn on, voltage going high
14.5
8.2
15
8.5
15.5
8.8
V
V
V
0.83
Current Limit
Kelvin Short-Circuit Current Limit
Kelvin Overload Current Limit
dV/dt Circuit
ILIM-SC
ILIM-OL
RLIMIT = 77Ω
RLIMIT = 77Ω
0.5
1.3
0.95
3
1.4
A
A
Output Voltage Ramp Time
Maximum Capacitor Voltage
ENABLE/FAULT Pin
Logic Level Low
tSLEW
VMAX
Enable to VOUT = 11.7V
2
2.8
5.3
ms
V
VIN-LOW
VIN-MID
Output disabled
0.45
1.35
2.5
0.55
1.45
2.62
5.1
0.65
1.55
2.75
5.3
V
V
Logic Level Mid
Thermal fault, output disabled
Logic Level High
VIN-HIGH Output enabled
VIN-MAX
V
High State Maximum Voltage
Logic Low Sink Current
Power Supply
4.9
V
IIN-LOW
VENABLE = 0V
-15
-22
µA
Operating
Shutdown
110
48
140
Quiescent Current
IQ
µA
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OCTOBER 2022
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
TYPICAL PERFORMANCE CHARACTERISTICS
TJ = +25℃, unless otherwise noted.
UVLO Turn-On Voltage vs. Temperature
UVLO Hysteresis vs. Temperature
8.54
8.52
8.50
8.48
8.46
8.44
8.42
0.86
0.85
0.84
0.83
0.82
0.81
0.80
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
Output Clamping Voltage vs. Temperature
Output Clamping Voltage vs. Temperature
15.10
15.08
15.06
15.04
15.02
15.00
14.98
14.96
14.94
15.04
15.02
15.00
14.98
14.96
14.94
14.92
14.90
14.88
SGM2528A and SGM2528B
ILOAD = 0A
SGM2528A and SGM2528B
ILOAD = 0.1A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
Output Clamping Voltage vs. Temperature
SGM2528A and SGM2528B
Output Clamping Voltage vs. Temperature
15.02
15.00
14.98
14.96
14.94
14.92
14.90
14.88
14.86
14.84
SGM2528A and SGM2528B
ILOAD = 1A
15.00 ILOAD = 0.5A
14.98
14.96
14.94
14.92
14.90
14.88
14.86
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃, unless otherwise noted.
Current Limit vs. RLIMIT for Kelvin Current Sensing
Current Limit vs. RLIMIT for Direct Current Sensing
10
10
OL
OL
SC
SC
1
1
0.1
0.1
10
100
10
100
RLIMIT for Kelvin Current Sensing (Ω)
RLIMIT for Direct Current Sensing (Ω)
Direct Current Sensing Levels vs. Temperature
Kelvin Current Sensing Levels vs. Temperature
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
OL
OL
SC
SC
RLIMIT = 15Ω
RLIMIT = 27Ω
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
Kelvin Current Sensing Levels vs. Temperature
Kelvin Current Sensing Levels vs. Temperature
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
OL
OL
SC
SC
RLIMIT = 33Ω
RLIMIT = 77Ω
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃, unless otherwise noted.
On-Resistance vs. Supply Voltage
ILOAD = 0.5A
Output Voltage dV/dt Rate vs. Temperature
26.4
26.2
26.0
25.8
25.6
25.4
25.2
2.02
2.00
1.98
1.96
1.94
1.92
1.90
8
9
10
11
12
13
14
15
16
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Supply Voltage (V)
Power Dissipation vs. Thermal Trip Time
Body Diode Forward Characteristics
800
700
600
500
400
300
200
100
0
60
50
40
30
20
10
0
+50℃
+25℃
+80℃
0.1
1
10
100
Time (ms)
1000 10000 100000
0.5
0.55
0.6
0.65
0.7
0.75
0.8
Forward Voltage (V)
Input Transient Response
VCC = 15V to 25V
ILOAD = 0.1A
VCC
VLOAD
Time (50μs/div)
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OCTOBER 2022
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
TYPICAL APPLICATION CIRCUITS
6, 7, 8, 9, 10
11
VCC
SOURCE
+12V
SGM2528
RLIMIT
4
ILIMIT
3
ENABLE/
FAULT
2
dV/dt
Load
GND
1
ENABLE
GND
Figure 1. Application Circuit with Direct Current Sensing
7, 8, 9, 10
6
11
3
VCC
+12V
SOURCE
SGM2528
RLIMIT
4
ILIMIT
ENABLE/
FAULT
2
Load
dV/dt
GND
ENABLE
1
GND
Figure 2. Application Circuit with Kelvin Current Sensing
VCC
VCC
SOURCE
SOURCE
RLIMIT
RLIMIT
SGM2528
SGM2528
ENABLE/
FAULT
ENABLE/
FAULT
ILIMIT
ILIMIT
dV/dt
dV/dt
Load
Load
GND
GND
ENABLE
Figure 3. Common Thermal Shutdown
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
FUNCTIONAL BLOCK DIAGRAM
VCC
Charge
Pump
UVLO
Voltage
SOURCE
Clamp (1)
IIN_LOW
ENABLE/
Enable
Logic
Control
Current
Limit
ILIMIT
FAULT
dV/dt
dV/dt
Thermal
Shutdown
Control
SGM2528
GND
NOTE: 1. SGM2528A and SGM2528B versions.
Figure 4. Block Diagram
APPLICATION INFORMATION
rate of the output voltage is controlled by the internal
dV/dt circuit. The output voltage will ramp up in 2ms,
unless additional capacitor is placed at the dV/dt pin to
slow down the ramp-up rate.
Basic Operation
This device is a smart eFuse with enhanced built-in
protection circuitry. It provides robust protection for all
systems and applications powered from 9V to 18V.
The device will not shut down unless the temperature
exceeds the factory-set shutdown threshold. When
entering current limit mode, the device will not be shut
down, but the FET current will be limited to the value
set by the ILIMIT pin. When entering input over-voltage
clamp mode, the device will also not be shut down, but
the output voltage will be limited to 15V even the input
voltage is larger.
For hot plug boards, the device provides inrush current
control and programmable output ramp rate. The
SGM2528 integrates over-current and short-circuit
protections. The precision over-current limit helps
minimize over design of the input power supply. The
short-circuit protection with fast response isolates the
load from input immediately when the short-circuit is
detected. The device provides precision monitoring of
bus voltage for brown-out and over-voltage conditions,
and asserts fault for downstream system. The SGM2528
is designed to protect systems such as hard disks,
PCIE SSDs and motherboard systems.
Current Limit
The current mirror structure is applied to limit the peak
current of the device, which measures a small fraction
of the load current, so that the loss made by the
sensing resistor is reduced. In addition, current mirror
structure also reduces the cost of the sensing resistor.
The input voltage will be limited by the device's internal
control circuitry and then applied to the load. The slew
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
APPLICATION INFORMATION (continued)
The current limit circuit has two limit levels: a lower
current limit level will be triggered by the excessive load
where the gate voltage is high and the FET is fully on. A
higher current limit level will be triggered by a short-
circuit event, where the device is actively limiting the
current and the gate voltage is at an intermediate level.
Under-Voltage Lockout
The under-voltage lockout circuit monitors the input
voltage via a comparator with hysteresis. In its high
state, the internal output switch is enabled. A low level
on this pin will turn off the output switch.
dV/dt Circuit
There are two methods to bias the ILIMIT pin with a
sensing resistor (RLIMIT). They are shown in Figure 1
and Figure 2.
The SGM2528 is designed to control the inrush current
during hot plugging. This limits the voltage sag on the
backplane power supply voltage and prevents
unintended resets of the system power supply. A slew
rate controlled startup (dV/dt) regardless of the load is
realized by the internal circuit, which generates a fixed
slope ramp signal. The rising slope of the output
voltage is determined by this ramp and the scaling
factor.
For the direct current sensing method, since the
sensing resistor is placed between the ILIMIT pin and the
load, the bond wire resistance is inevitably included in
the current limit circuit. This resistor not only affects the
current limit accuracy, but may also vary slightly as the
impedance between the sensing resistor and the
SOURCE pin changes. Considering that the
5
If the dV/dt pin is left open, the output voltage ramps up
in approximately 2ms. By connecting an external
capacitor from this pin to ground, the user can get a
longer output ramp-up time. There is a constant current
source of about 100nA inside the dV/dt pin.
Considering the low current level of the current source,
it is recommended to connect a ceramic capacitor or a
low leakage capacitor to the dV/dt pin if necessary, and
external electrolytic capacitors are not recommended
for this pin.
SOURCE pins are connected in parallel, the
on-resistance of the device will be slightly reduced, and
the bond wire resistance of this pin is also one fifth of
the other pins.
For the Kelvin current sensing method, the sensing
resistor is placed between the ILIMIT pin and one of the
SOURCE pins. Since the current limit circuit senses the
voltage on the die, any bond wire resistance as well as
external impedance will not affect the current limit
levels. Compared with direct current sensing, this
method has only four SOURCE pins for power, which
will make the on-resistance slightly larger.
The total ramp time (t0-12) of output voltage for 0V to
12V can be calculated using the following equations:
t0-12 = 25.5e6 (5pF + CEXT
t0-12
)
(1)
Over-Voltage Clamp (SGM2528A and
SGM2528B)
CEXT
=
- 5pF
25.5e6
(2)
The over-voltage clamp circuit monitors the output
voltage. If the input voltage is larger than 15V, the
device will regulate the main integrated FET to make
the output voltage limited to 15V. This can not only
ensure the continuity of the device during transient
operation, but also protect the load. If the over-voltage
event lasts for a long time, the power consumption of
the main FET may overheat the device, then trigger the
thermal protection circuit which will turn off the device.
where:
EXT is in Farads.
t is in seconds.
C
If the device is turned off due to a fault, disable or input
power recycling, the output voltage will ramp up from
0V via the timing capacitor being discharging when it is
turned back on.
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
APPLICATION INFORMATION (continued)
input or toggling the ENABLE/FAULT pin. For auto-retry
Enable/Fault
devices, as long as the die temperature drops by more
than 22℃, the output will be enabled and the load will
power up again.
The ENABLE/FAULT not only controls the on/off state
of the internal FET, but also indicates whether the
device is shut down due to thermal protection, so it is a
multifunctional, bidirectional pin. The output of the
device turns on when the ENABLE/FAULT is high and
vice versa.
To increase the device trip time during transient events
at high power conditions, the thermal shutdown
temperature threshold is set high. Therefore, it is not
recommended to allow this device to work for a long
time in a working condition above +125℃.
Considering the 3-state operation of this pin, it should
be connected to an open drain or open collector circuit
instead of a circuit with a pull-up structure.
5.1V
As shown in Figure 5, if the device triggers thermal
protection and shuts down, the ENABLE/FAULT pin will
be pulled down to logic medium level (1.45V, TYP). The
voltage signal at this pin can be monitored by an
external circuit to obtain information on whether thermal
shutdown of the device has occurred. If this pin shares
an external open drain or open collector circuit with
another device in the family like Figure 3 shows, a
thermal shutdown failure of either device will cause
both devices to shut down.
Device Operational
Enable/Fault Signal
1.55V
Thermal Shutdown
1.35V
Shutdown, Thermal Reset
GND
Figure 5. Enable/Fault Signal Levels
There are two ways to enable the output of latched
thermal devices, either by pulling the ENABLE/FAULT
pin to ground through an external switch and then going
high, or when the input power is recycled. For
auto-retry devices, as long as the die temperature of
the device in the shutdown state is below the
temperature threshold, both devices will restart.
5.1V
15μA
Enable SD
2.62V
+
_
ENABLE/
FAULT
0.55V
Start-Up
Blanking
1.45V
Thermal Reset
Thermal SD
SD
Thermal
Shutdown
Thermal Shutdown
The SGM2528 integrates a temperature sensing circuit
for sensing the die temperature on the power FET. If
the temperature exceeds the temperature threshold
(158℃), the device enters thermal shutdown mode and
the load is powered down. For latched thermal devices,
the output will be enabled in two ways: recycling the
Figure 6. Enable/Fault Simplified Circuit
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5A, 12V Electronic Fuse (eFuse)
with Thermal Shutdown
SGM2528
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
OCTOBER 2022 ‒ REV.A.1 to REV.A.2
Page
Update Application Information section.................................................................................................................................................... 9, 10, 11
AUGUST 2020 ‒ REV.A to REV.A.1
Page
Updated Typical Performance Characteristics section.........................................................................................................................................6
Changes from Original (JULY 2020) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
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PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-3×3-10L
D
e
N10
D1
k
E
E1
N5
N1
b
L
BOTTOM VIEW
TOP VIEW
2.4
1.7 2.8
A
A1
A2
0.6
SIDE VIEW
0.24
0.5
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
0.800
0.050
MIN
0.028
0.000
MAX
0.031
0.002
A
A1
A2
D
0.700
0.000
0.203 REF
0.008 REF
2.900
2.300
2.900
1.500
3.100
2.600
3.100
1.800
0.114
0.091
0.114
0.059
0.122
0.103
0.122
0.071
D1
E
E1
k
0.200 MIN
0.500 TYP
0.008 MIN
0.020 TYP
b
0.180
0.300
0.300
0.500
0.007
0.012
0.012
0.020
e
L
SG Micro Corp
TX00060.000
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PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
TDFN-3×3-10L
13″
12.4
3.35
3.35
1.13
4.0
8.0
2.0
12.0
Q1
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TX10000.000
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PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
13″
386
280
370
5
SG Micro Corp
www.sg-micro.com
TX20000.000
相关型号：
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