SM3116NSUC [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM3116NSUC |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总10页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM3116NSUC
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
30V/60A,
RDS(ON)=5.7mW (Max.) @ VGS=10V
RDS(ON)=8mW (Max.) @ VGS=4.5V
S
D
G
·
·
Reliable and Rugged
Lead Free and GreenDevices Available
(RoHS Compliant)
Top View of TO-251S
D
·
100% UIS + Rg Tested
G
Applications
·
Power Management in Desktop Computer or
DC/DC Converters.
S
N-ChannelMOSFET
Ordering and Marking Information
SM3116NS
Package Code
UC : TO-251S
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
SM3116NS UC :
SM3116N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
30
±20
150
-55 to 150
20
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
°C
°C
A
Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
TC=25°C
140
90
IDP
300μs Pulse Drain Current Tested
A
A
TC=100°C
TC=25°C
60*
48
a
ID
Continuous Drain Current
TC=100°C
TC=25°C
50
PD
Maximum Power Dissipation
W
TC=100°C
Steady State
t £ 10s
20
RqJC
RqJA
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
2.5
°C/W
°C/W
15
Steady State
45
b
IAS
Avalanche Current, Single pulse (L=0.5mH)
Avalanche Energy, Single pulse (L=0.5mH)
20
A
b
EAS
100
mJ
Note a：* Current limited by bond wire.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
30
-
-
-
1
V
VGS=0V, IDS=250mA
VDS=24V, VGS=0V
-
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
-
-
30
2.5
±100
5.7
-
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1.5
1.8
-
V
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
-
-
-
-
-
nA
4.7
6.9
6
c
RDS(ON) Drain-Source On-state Resistance
TJ=125°C
mW
VGS=4.5V, IDS=20A
VDS=5V, IDS=40A
8
Gfs
Forward Transconductance
95
-
S
2
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Diode Characteristics
c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Charge Time
ISD=20A, VGS=0V
-
-
-
-
-
0.8
26
15
11
9
1.1
V
-
-
-
-
ta
ns
nC
IDS=40A, dlSD/dt=100A/ms
tb
Discharge Time
Qrr
Reverse Recovery Charge
Dynamic Characteristics d
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
2.5
1700
270
175
15
-
-
W
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
-
pF
-
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
28
24
71
32
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
13
ns
39
10
VDS=15V, VGS=4.5V,
IDS=40A
Qg
Total Gate Charge
-
14
-
Qg
Qgth
Qgs
Qgd
Total Gate Charge
-
-
-
-
28
3
39
-
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=40A
3.7
7.9
-
-
Note c ：Pulse test ; pulse width£300ms, duty cycle£2%.
Note d ：Guaranteed by design, not subject to production testing.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Typical Operating Characteristics
Power Dissipation
Drain Current
60
70
60
50
40
30
20
10
0
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature
Safe Operation Area
Thermal Transient Impedance
400
100
2
1
Duty = 0.5
1ms
0.2
0.1
10ms
10
1
100ms
0.05
1s
0.1
0.02
0.01
DC
Mounted on 1in2 pad
Single Pulse
TC=25OC
R
qJA :15oC/W
0.01
0.1
0.01
1E-4 1E-3 0.01
0.1
1
10
100
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
140
120
100
80
9
8
7
6
5
4
3
VGS= 4.5,5,6,7,8,9,10V
4V
VGS=4.5V
3.5V
60
VGS=10V
40
20
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80 100 120 140
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=40A
IDS =250mA
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
5
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = 10V
IDS = 40A
100
10
1
Tj=150oC
Tj=25oC
RON@Tj=25oC: 4.8mW
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
2400
2000
1600
1200
800
400
0
10
Frequency=1MHz
VDS= 15V
IDS= 40A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
4
8
12
16
20
24
28
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
6
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
7
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Classification Profile
9
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
SM3116NSUC
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Volume mm3
<350
Thickness
<2.5 mm
235 °C
220 °C
220 °C
220 °C
³ 2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
<350
>2000
260 °C
245 °C
245 °C
260 °C
260 °C
250 °C
1.6 mm – 2.5 mm
³ 2.5 mm
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
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5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - July, 2015
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