SM4036NHKPC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;型号: | SM4036NHKPC-TRG |
厂家: | Sinopower Semiconductor Inc |
描述: | N-Channel Enhancement Mode MOSFET |
文件: | 总11页 (文件大小:806K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM4036NHKP
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
40V/80A
D
D
D
D
RDS(ON)=2.2mΩ(max.)@VGS=10V
RDS(ON)=3.1mΩ(max.)@VGS=4.5V
100% UIS Tested
G
S
Pin 1
S
S
•
•
•
•
•
Reliable and Rugged
DFN5x6A-8_EP
Lower Qg and Qgd for high-speed switching
Lower RDS(ON) to Minimize Conduction Losses
Lead Free and Green Devices Available
(RoHS Compliant)
(5,6,7,8)
DD D D
•
Moisture Sensitivity Level MSL1
(per JEDEC J-STD-020D)
(4)
G
Applications
S S S
(1,2,3)
•
Power Management in Desktop Computer or
DC/DC Converters.
N-Channel MOSFET
Ordering and Marking Information
SM4036NH
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 175 oC
Assembly Material
Handling Code
Handling Code
Temperature Range
Package Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
4036NH
XXXXX
SM4036NH KP :
XXXXX - Lot Code
●
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
1
www.sinopowersemi.com
SM4036NHKP
(TA=25°C Unless Otherwise Noted)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
40
±20
175
-55 to 175
40
V
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
80 a
80 a
320
89
a
ID
Continuous Drain Current
Pulse Drain Current
A
b
IDM
PD
RθJC
ID
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
Pulse Drain Current
W
°C/W
A
44
1.7
24
20
b
IDM
96
A
2.5
PD
Maximum Power Dissipation
W
1.75
24
t
10s
≤
c
RθJA
Thermal Resistance-Junction to Ambient
°C/W
Steady State
L=0.1mH
60
d
IAS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
48
A
d
EAS
L=0.1mH
115
mJ
:
Note a Max. continuous current is limited by bonding wire.
:
Note b Pulse width is limited by max. junction temperature.
2
:
Note c Surface mounted on 1in pad area, steady state t = 999s.
o
o
:
Note d UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
www.sinopowersemi.com
2
SM4036NHKP
(TA = 25°C unless otherwise noted)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
VDS=32V, VGS=0V
40
-
-
-
V
µA
V
-
1
IDSS Zero Gate Voltage Drain Current
TJ=85°C
-
-
30
2.5
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=25A
VGS=4.5V, IDS=15A
VDS=5V, IDS=15A
1.3
1.7
-
-
-
-
-
±100 nA
1.8
2.4
47.3
2.2
mΩ
3.1
e
RDS(ON) Drain-Source On-state Resistance
Gfs Forward Transconductance
-
S
Diode Characteristics
e
VSD
trr
Diode Forward Voltage
ISD=25A, VGS=0V
-
-
-
-
-
0.75
40
1.1
V
Reverse Recovery Time
Charge Time
-
-
-
-
ta
22.2
17.6
33.2
ns
nC
Ω
ISD=25A, dlSD/dt=100A/µs
tb
Discharge Time
Qrr
Reverse Recovery Charge
Dynamic Characteristicsf
RG
Ciss
Coss
Crss
td(ON)
tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
-
-
-
-
-
-
-
-
1
2
Input Capacitance
3125 4063
VGS=0V,
VDS=20V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
772
104
18.3
9.8
-
pF
-
33
18
VDD=20V, RL=20Ω,
IDS=1A, VGEN=10V,
RG=6Ω
ns
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristicsf
56.6 102
50.3
91
VDS=20V, VGS=10V,
IDS=25A
Qg
Total Gate Charge
-
50
70
Qg
Qgth
Qgs
Qgd
Total Gate Charge
-
-
-
-
23
5
-
-
-
-
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=20V, VGS=4.5V,
IDS=25A
8.9
6.1
:
Note e Pulse test ; pulse width 300 s, duty cycle 2%.
≤
µ
≤
:
Note f Guaranteed by design, not subject to production testing.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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3
SM4036NHKP
Typical Operating Characteristics
Power Dissipation
Drain Current
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
TC=25o
C
TC=25oC,VG=10V
0 20 40 60 80 100 120 140 160 180
0
0
20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
Single Pulse
RθJC :1.7oC/W
1E-6 1E-5 1E-4 1E-3
0.01
0.1
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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SM4036NHKP
Typical Operating Characteristics(Cont.)
Safe Operation Area
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.01
1E-3
0.02
0.01
Single Pulse
Mounted on 1in2 pad
RθJA :60oC/W
1E-4 1E-3 0.01 0.1
1
10 100 1000
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Output Characteristics
Drain-Source On Resistance
160
4.0
140
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS=3.5,4,4.5,5,6,7,8,9,10V
120
100
VGS=4.5V
VGS=10V
80
3V
60
40
20
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
30
60
90
120
150
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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5
SM4036NHKP
Typical Operating Characteristics(Cont.)
Gate-Source On Resistance
Gate Threshold Voltage
12
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IDS=25A
I
DS =250µA
10
8
6
4
2
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150 175
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Drain-Source On Resistance
Source-Drain Diode Forward
200
100
2.5
2.0
1.5
1.0
0.5
0.0
V
GS = 10V
IDS = 25A
T=150oC
j
10
1
T=25oC
j
RON@T =25oC: 1.8mΩ
j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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6
SM4036NHKP
Typical Operating Characteristics(Cont.)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
4200
Frequency=1MHz
VDS= 20V
IDS= 25A
3500
Ciss
2800
2100
1400
Coss
700
Crss
0
0
5
10 15 20 25 30 35 40
0
10
20
30
40
50
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
Transfer Characteristics
150
125
100
75
T=25oC
j
T=125oC
j
50
25
0
0
1
2
3
4
5
6
VGS - Gate-Source Voltage (V)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
www.sinopowersemi.com
7
SM4036NHKP
Avalanche Test Circuit and Waveforms
V
DS
V
DSX(SUS)
L
tp
V
DS
DUT
I
AS
RG
V
DD
V
DD
E
AS
I
L
tp
0.01
Ω
tAV
Switching Time Test Circuit and Waveforms
V
DS
RD
V
DS
90%
DUT
V
GS
RG
V
DD
10%
V
GS
tp
t
d(on)
tr
t
d(off)
tf
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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8
SM4036NHKP
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to
development high quality and better performance products to satisfy all customers’ needs.
However, a product may fail to meet customer’s expectation or malfunction for various
situations.
All information which is shown in the datasheet is based on Sinopower’s research and
development result, therefore, Sinopower shall reserve the right to adjust the content and
monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while
defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each
product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of
and examples of application circuits for the products. Sinopower does not grant customers
explicitly or implicitly, any license to use or exercise intellectual property or other rights held
by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any
dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment,
device or system which requires an extremely high level of reliability, such as the failure or
malfunction of which any may result in a direct threat to human life or a risk of human
injury. Sinopower shall bear no responsibility in any way for use of any of the
products for the above special purposes. If a product is intended to use for any such special
purpose, such as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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9
SM4036NHKP
Classification Profile
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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SM4036NHKP
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (T
)
smin
150 C
200 C
°
°
Temperature max (T
)
smax
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature (Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
Time (t )** within 5 C of the specified
°
P
20** seconds
30** seconds
classification temperature (T )
c
Average ramp-down rate (Tp to T
)
6 C/second max.
°
6 C/second max.
°
smax
Time 25 C to peak temperature
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
≥350
<2.5 mm
235 C
220 C
°
°
2.5 mm
≥
220 C
220 C
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
>2000
260 C
<1.6 mm
260 C
260 C
°
°
°
1.6 mm – 2.5 mm
260 C
250 C
245 C
°
°
°
2.5 mm
250 C
245 C
245 C
°
≥
°
°
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
HTRB
HTGB
PCT
TCT
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
Customer Service
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5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2018
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11
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