MB39C326PW [SPANSION]
Switching Regulator;
| 型号： | MB39C326PW |
| 厂家： | 
SPANSION |
| 描述： | Switching Regulator 开关 |
| 文件： | 总25页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spansion® Analog and Microcontroller
Products
The following document contains information on Spansion analog and microcontroller products. Although the
document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
will continue to offer these products to new and existing customers.
Continuity of Specifications
There is no change to this document as a result of offering the device as a Spansion product. Any changes that
have been made are the result of normal document improvements and are noted in the document revision
summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a
revision summary.
Continuity of Ordering Part Numbers
Spansion continues to support existing part numbers beginning with “MB”. To order these products, please use
only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local sales office for additional information about Spansion memory, analog, and
microcontroller products and solutions.
FUJITSU SEMICONDUCTOR
DATA SHEET
DS405-00001-2v0-E
ASSP for Power Supply Applications
6MHz Synchronous Rectification
Buck-Boost DC/DC Converter IC
MB39C326
DESCRIPTION
The MB39C326 is a high efficiency, low noise synchronous, Buck-boost DC/DC converter designed for
powering the radio frequency power amplifiers (RFPA) in 3G/GSM mobile handsets and other mobile
applications.
FEATURES
High efficiency
: Up to 93%
Input voltage range
Adjustable output voltage range
Over current limit value (peak)
: 2.5 V to 5.5 V
: 0.8 V to 5.0 V
: 3.1A/1.3A/0.49A
Maximum output current (Buck, PWM mode)
: 1200mA (VIN=5.0V to 5.5V, at Vo=5.0V)
: 1200mA (VIN=3.6V to 5.5V, at Vo=3.6V)
: 1200mA (VIN=3.3V to 5.5V, at Vo=3.3V)
: 900mA (VIN=3.7V to 5.0V, at Vo=5.0V)
: 700mA (VIN=2.5V to 3.6V, at Vo=3.6V)
: 800mA (VIN=2.5V to 3.3V, at Vo=3.3V)
(Boost, PWM mode)
(Buck, PowerSave mode) : 600mA (VIN=5.0V to 5.5V, at Vo=5.0V)
: 600mA (VIN=3.6V to 5.5V, at Vo=3.6V)
: 600mA (VIN=3.3V to 5.5V, at Vo=3.3V)
(Boost, PowerSave mode) : 500mA (VIN=3.7V to 5.0V, at Vo=5.0V)
: 400mA (VIN=2.5V to 3.6V, at Vo=3.6V)
: 500mA (VIN=2.5V to 3.3V, at Vo=3.3V)
: 50µA
Quiescent current
6MHz PWM operation allows 0.5µH small form inductor
Automatic Transition between Buck mode and boost mode
Power-Save Mode for improved efficiency at light load current
Power Supply online Design Simulation
Easy DesignSim
This product supports the web-based design simulation tool.
It can easily select external components and can display useful information.
Please access from the following URL.
http://edevice.fujitsu.com/pmic/en-easy/?m=ds
Copyright©2012-2013 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2013.5
MB39C326
Selectable output voltage with external resistor
Built-in Over temperature protection circuit
Built-in Under voltage lockout protection circuit
Package
: WL-CSP (20pin 0.4 mm-ball-pitch 2.15×1.94 mm)
APPLICATIONS
Products that use 1-cell lithium batteries for the power supply
RF power amplifier
Cell-phone
RF-PC card and PDA
PIN ASSIGNMENTS
TOP VIEW
4
3
2
1
EN
ILIMSEL VSEL VSELSW GND
VCC
XPS
GND
GND
FB
VDD SWOUT DGND
SWIN
VOUT
VDD SWOUT DGND
SWIN
D
VOUT
E
A
B
C
PIN DISCRIPTIONS
Pin No.
Pin Name
I/O
Description
A4
EN
I
IC Enable input pin (H: Enable, L: Shutdown)
E3
FB
I
Voltage feedback pin
C3,D3,E4
B4
GND
Control / Logic ground pins
ILIMSEL
SWOUT
SWIN
DGND
VSEL
VSELSW
VDD
I
I
I
Current limit mode pin
B1,B2
D1,D2
C1,C2
C4
Connection pins for Inductor
Connection pins for Inductor
Power ground pins
I
Output voltage select pin (H:Using R3 L:No using R3)
Connection pin for output voltage setting resistor R3
Electric power input pin for DCDC converter output voltage
Electric power input pin for IC control block
Power save mode pin (H: Normal mode, L: Power save mode)
Buck-boost converter output pins
D4
A1,A2
A3
I
I
VCC
B3
XPS
I
E1,E2
VOUT
O
2
DS405-00001-2v0-E
MB39C326
BLOCK DIAGRAM
L1
SWOUT
SW1
SWIN
SW5
VDD
VOUT
C
IN
C
OUT
SW4
Current
Sensor
SW2
SW3
Vbatt
DGND
AGND
FB
VCC
EN
Gate Controller
Err
Amp
BGR
UVLO
Device
Control
R1
R2
ILIMSEL
XPS
R3
VSELSW
Over Temp
Protection
Oscillator
VSEL
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DS405-00001-2v0-E
MB39C326
FUNCTION
(1) Gate Controller
It is controlled the synchronous rectification operation of built-in 2-P-ch MOS FETs and 2-N-ch MOS FETs
according to frequency (6 MHz) set with a oscillator at the normal operation.
(2) Error Amp & phase compensation circuit
This compares the feedback voltage and the reference voltage (VREF). This IC contains the phase
compensation circuit which optimizes the IC operation. Therefore, it is unnecessary to consideration of the
phase compensation circuit, and external parts for the phase compensation.
(3) Band gap reference circuit
A high accuracy reference voltage is generated with BGR (band gap reference) circuit.
(4) Oscillator
The internal oscillator output a 6 MHz clock signal to set a switching frequency.
(5) Over temperature protection circuit
The over temperature protection circuit is built-in as a protection circuit. When junction temperature
reaches +125°C, the over temperature protection circuit turns off all N-ch MOS FETs and P-ch MOS FETs.
Also, when the junction temperature falls to +110°C, this IC operates normally.
(6) Over current protection circuit (Current Sensor + Device Control)
The over current protection circuit detects the current (ILX) which flows from built-in P-ch MOS FET
connected to VDD into an external inductor. The over current protection circuit controls the peak value of
current (IPK).
(7) Power save mode operation
Power save mode is used to improve efficiency at the light load. By setting the XPS pin to "L" level, power
save mode is set and the operation is performed in PWM mode or PFM mode depending on the load current.
At this time, if the load current is low, this IC operates with PFM (PulseFrequency Modulation). It should
be used above VOUT = 0.8V. If the output voltage becomes lower than the setting value at the light load,
switching is performed several times and the output voltage rises. If the output voltage reaches the setting
value, it changes to the stop state, all of the four FETs are turned off, and the switching loss and the
dissipation power for the circuit are suppressed.
Consumption current in stop state at the power-save-mode becomes about 50μA.
Function Table
Input voltage
range[V]
Output voltage
range[V]
Over current
limit (IPK)
[A]
Mode
XPS ILIMSEL
Min
Max
Min
Max
PWM mode
Power save mode
H
L
L
H
L
3.1
2.5
5.5
0.8
5.0
1.3
0.49
Note: Input of (XPS, ILIMSEL=H, H) is prohibited.
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MB39C326
(8) EN pin
When the EN pin is set to "H" level, the device operation is enabled. When the EN pin is set to GND, the
device is switched to shutdown mode.
When the EN pin is set to "L" level, the device is switched to shutdown mode.
In shutdown mode, the regulator stops switching, all FET switches are turned off, and the load is
disconnected from the input.
(9) VSEL pin
MB39C326 has a function to change the output voltage with the VSEL pin and additional resistance.
For details of the output voltage settings, see the section (2) of "Programming the Output Voltage" in
APPLICATION NOTES.
(10) Buck-Boost operations
MB39C326 operates in Buck or Boost mode by monitoring the VCC/VOUT voltage with a newly
developed PWM controller.
The transition between buck and boost mode is smooth and the efficiency is high.
During Buck mode (VCC>VOUT), SW1 and SW2 perform switching while SW3 is fixed to OFF and SW4
and 5 are fixed to ON.
During Boost mode (VCC<VOUT), SW3, SW4 and SW5 perform switching while SW1 is fixed to ON and
SW2 is fixed to OFF.
The voltage values of VCC and VDD at the switching between buck and boost vary depending on the load
current, the environmental temperature and the process variations.
(11) Startup circuit
MB39C326 has the soft-start function to prevent rush current upon turning on of the power.
The startup time is approximately 100μ seconds.
5
DS405-00001-2v0-E
MB39C326
ABSOLUTE MAXIMUM RATINGS
Rating
Parameter
Symbol
Condition
Unit
Min
-0.3
-0.3
-
Max
+7.0
Power supply voltage
Signal input voltage
Power dissipation
VMAX
VINMAX
PD
VDD, VCC
V
V
EN, XPS, VSEL, ILIMSEL
VDD+0.3
1080
Ta ≤ +25°C
mW
°C
Storage temperature
TSTG
-
-65
+150
Human Body Model
(100 pF, 1.5 kΩ)
VESDH
-2000
+2000
V
ESD Voltage
VESDM
VESDC
Machine Model (200 pF, 0Ω)
-200
+200
V
V
Charged device model
-1000
+1000
Maximum junction
temperature
Tj-MAX
-
-
+95
°C
WARNING: Semiconductor devices may be permanently damaged by application of stress (including, without
limitation, voltage, current or temperature) in excess of absolute maximum ratings.
Do not exceed any of these ratings.
6
DS405-00001-2v0-E
MB39C326
RECOMMENDED OPERATING CONDITIONS
Value
Unit
Parameter
Symbol
Condition
Min Typ Max
Power supply
voltage
VDD
VDD, VCC
2.5*
3.7
-
5.5*
VDD
V
V
Signal input
voltage
VIDD
EN, XPS, VSEL, ILIMSEL
0.0
Io (Max1)
Io (Max2)
VIN=5.5, Vo=5.0V, XPS=H, ILIMSEL=L
VIN=5.5, Vo=4.4V, XPS=H, ILIMSEL=L
VIN=5.5, Vo=3.6V, XPS=H, ILIMSEL=L
VIN=4.2, Vo=3.6V, XPS=H, ILIMSEL=L
VIN=5.5, Vo=3.3V, XPS=H, ILIMSEL=L
VIN=3.7, Vo=3.3V, XPS=H, ILIMSEL=L
VIN=5.5, Vo=2.0V, XPS=H, ILIMSEL=L
VIN=3.7, Vo=2.0V, XPS=H, ILIMSEL=L
VIN=2.5, Vo=2.0V, XPS=H, ILIMSEL=L
VIN=5.5, Vo=1.2V, XPS=H, ILIMSEL=L
VIN=3.7, Vo=1.2V, XPS=H, ILIMSEL=L
VIN=2.5, Vo=1.2V, XPS=H, ILIMSEL=L
VIN=5.5, Vo=0.8V, XPS=H, ILIMSEL=L
VIN=3.7, Vo=0.8V, XPS=H, ILIMSEL=L
VIN=2.5, Vo=0.8V, XPS=H, ILIMSEL=L
VIN=2.5V, Vo=3.3V, XPS=H, ILIMSEL=L
VIN=2.5V, Vo=3.6V, XPS=H, ILIMSEL=L
VIN=3.7V, Vo=4.4V, XPS=H, ILIMSEL=L
VIN=2.5V, Vo=4.4V, XPS=H, ILIMSEL=L
VIN=3.7V, Vo=5V, XPS=H, ILIMSEL=L
VIN=2.5V, Vo=5V, XPS=H, ILIMSEL=L
VIN=5.5, Vo=5.0V, XPS=L, ILIMSEL=H
VIN=5.5, Vo=4.4V, XPS=L, ILIMSEL=H
VIN=5.5, Vo=3.6V, XPS=L, ILIMSEL=H
VIN=4.2, Vo=3.6V, XPS=L, ILIMSEL=H
VIN=5.5, Vo=3.3V, XPS=L, ILIMSEL=H
VIN=3.7, Vo=3.3V, XPS=L, ILIMSEL=H
VIN=5.5, Vo=2.0V, XPS=L, ILIMSEL=H
VIN=3.7, Vo=2.0V, XPS=L, ILIMSEL=H
VIN=2.5, Vo=2.0V, XPS=L, ILIMSEL=H
VIN=5.5, Vo=1.2V, XPS=L, ILIMSEL=H
VIN=3.7, Vo=1.2V, XPS=L, ILIMSEL=H
VIN=2.5, Vo=1.2V, XPS=L, ILIMSEL=H
VIN=5.5, Vo=0.8V, XPS=L, ILIMSEL=H
VIN=3.7, Vo=0.8V, XPS=L, ILIMSEL=H
VIN=2.5, Vo=0.8V, XPS=L, ILIMSEL=H
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1200 mA
1200 mA
1200 mA
1200 mA
1200 mA
1200 mA
1200 mA
1200 mA
1200 mA
Io (Max3)
Io (Max4)
Output current
(Buck)
Io (Max5)
Io (Max6)
Io (Max7)
PWM mode
700
600
600
600
500
250
800
700
mA
mA
mA
mA
mA
mA
mA
mA
Io (Max8)
Io (Max9)
Output current
(Boost)
1000 mA
Io (Max10)
Io (Max11)
700
900
600
600
600
600
600
600
600
600
500
500
400
300
300
400
200
200
500
400
600
350
500
300
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
PWM mode
Io (Max12)
Io (Max13)
Io (Max14)
Io (Max15)
Output current
(Buck)
Io (Max16)
Io (Max17)
Io (Max18)
PowerSave mode
Io (Max19) VIN=2.5V, Vo=3.3V, XPS=L, ILIMSEL=H
Io (Max20) VIN=2.5V, Vo=3.6V, XPS=L, ILIMSEL=H
Output current
(Boost)
VIN=3.7V, Vo=4.4V, XPS=L, ILIMSEL=H
Io (Max21)
VIN=2.5V, Vo=4.4V, XPS=L, ILIMSEL=H
PowerSave mode
VIN=3.7V, Vo=5V, XPS=L, ILIMSEL=H
Io (Max22)
VIN=2.5V, Vo=5V, XPS=L, ILIMSEL=H
7
DS405-00001-2v0-E
MB39C326
Value
Min Typ Max
Parameter
Symbol
Condition
Unit
Operating Ambient
temperature
Ta
-
-40
-
+85
°C
Junction
temperature range
Tj
L
-
-
-40
-
-
+95
-
°C
Inductor value
0.5
µH
* : Depending on the setting condition. See "Function Table" in "FUNCTION (7) Power save mode
operation".
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device's electrical characteristics are warranted when the device is
operated under these conditions.
Any use of semiconductor devices will be under their recommended operating condition.
Operation under any conditions other than these conditions may adversely affect reliability of
device and could result in device failure.
No warranty is made with respect to any use, operating conditions or combinations not represented
on this data sheet. If you are considering application under any conditions other than listed herein,
please contact sales representatives beforehand.
8
DS405-00001-2v0-E
MB39C326
ELECTRICAL CHARACTERISTICS
The specifications apply under the recommended operating condition.
Value
Unit
Parameter
Symbol
Condition
Min
0.8
Typ
-
Max
5.0
XPS = L/XPS = H,
ILIMSEL = L
Output voltage range
Feedback voltage
VO
VFB
IO
V
-
490
500
510
mV
mA
V
IN = 3.1 V, VO = 4.5 V
Maximum output current
800
-
-
XPS = H, ILIMSEL = L
IO = 0 to 800mA
Line Regulation
Load Regulation
VLINE
-
0.2
0.3
3.10
1.30
0.49
5.8
-
-
%
%
VLOAD IO = 0 to 800mA
XPS= H, ILIMSEL = L
-
-
2.50
1.05
0.36
5.2
-
3.75
1.60
0.60
6.4
2
A
Over current limit
IPK
XPS=L, ILIMSEL = H
A
XPS=L, ILIMSEL = L
A
Oscillation frequency
Shutdown current
fOSC
ISD
-
MHz
μA
EN = L
EN = H, XPS = L,
VIN = 3.7 V, VO = 3.3 V,
IO = 0 mA
Quiescent current
SW1
IQ
-
50
-
μA
-
-
63.5
124
82
84
175
116
164
72
SW2
SW3
SW4
SW5
SW FET
ON
resistance
VDD= 3.7 V, VO=3.3V,
Rdson
mΩ
-
Ta=+25°C
-
123
51
-
TOTPH
TOTPL
VUVLOH
VUVLOL
VIL
-
-
-
-
-
135*
110*
2.0
1.9
-
-
°C
°C
V
Over temperature
protection
-
-
1.9
1.8
0.0
1.5
-
2.1
2.0
0.25
VDD
0.1
UVLO
Threshold voltage
V
EN, XPS, VSEL, ILIMSEL
EN, XPS, VSEL, ILIMSEL
EN, XPS, VSEL, ILIMSEL
V
Signal input threshold
voltage
VIH
-
V
Signal input current
ICTL
-
μA
*: This parameter is not be specified. This should be used as a reference to support designing the circuits.
9
DS405-00001-2v0-E
MB39C326
TYPICAL APPLICATIONS CIRCUIT (RF Power Amplifier)
0.5uH
C
IN
SWOUT
VDD
SWIN
VOUT
V
BATT
VO
10uF
C
OUT
VCC
2.2uF
FB
EN
VSELSW
VSEL
P
out
Pin
DGND
AGND
PA
MB39C326
DAC
10
DS405-00001-2v0-E
MB39C326
APPLICATION NOTES
Programming the Output Voltage
Output voltage is calculated using the equation (1) below.
Use R1 resistor value of 620 kΩ. Built-in phase compensation circuit is generated according to this resistor
value.
(1) Not using a selectable voltage option
R1+R2
VO= VFB×
R2
(VFB = 500 mV)
L1
SWOUT
SWIN
VOUT
VBATT
VO
VDD
VCC
EN
CIN
R1
R2
COUT
FB
VSELSW
DGND
XPS
VSEL
ILIMSEL
GND
(2) Using a selectable voltage option
When VSEL=L
R1+R2
VO= VFB×
R2
When VSEL=H
R1+(R2//R3)
VO= VFB×
R2//R3
L1
SWOUT
SWIN
VOUT
VBATT
VO
VDD
VCC
CIN
R1
R2
COUT
FB
VSELSW
DGND
EN
R3
XPS
VSEL
ILIMSEL
GND
11
DS405-00001-2v0-E
MB39C326
(3) When the output variable is dynamically performed
R1
R3
R1
R3
R1
R2
VO = -
×VDAC + VFB×(
+
+1)
(VFB = 500mV)
SWOUT
SWIN
VBATT
V
O
VDD
VCC
VOUT
FB
CIN
R1
R2
C
OUT
EN
R3
XPS
VSELSW
DGND
VSEL
ILIMSEL
GND
DAC
Relationship between DAC and output when setting to R1=620kΩ,
R2=110kΩ and R3=330kΩ
VO - DAC
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
0.000
0.500
1.000
1.500
2.000
2.500
DAC voltage (V)
12
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MB39C326
INDUCTOR SELECTION
The recommended inductor is 0.5μH (0.47μH).
To acquire a high-efficiency, select an inductor with low ESR.
Confirm in use conditions that the coil current does not exceed the rated saturation current.
It is recommended that the switch current limit value is considered.
Note that the permissible current value might be low about some products with high ESR.
The following table shows the recommended inductor.
Size
W[mm]
2.0
DCR[Ω]
(max)
Isat[A]
(-30%)
Vendor
Part #
L[mm]
H[mm]
Coilcraft
XPL2010-501ML
1.9
1.0
0.045
2.64
INPUT CAPACITOR SELECTION
It is recommended to place a low ESR ceramic bypass capacitor at least 10uF close to VDD and GND
because the input capacitor is the power-supply voltage.
The execution capacity of some ceramic capacitors greatly decreases when adding bias.
Select a product by checking the part characteristics of manufacturer because small size parts or low voltage
rating parts tend to have that characteristic.
OUTPUT CAPACITOR SELECTION
The recommended standard capacity of the output capacitor is 2.2uF in PWM mode.
When using in PFM mode, the capacitor with larger capacity (around 22μF) is recommended to reduce the
ripple voltage.
To suppress the decrease of output voltage during the load change, adjust with a larger capacitor.
Larger capacitors and low ESR capacitors is useful to reduce the ripple.
THERMAL INFORMATION
Power dissipation is 1080mW Max.
Thermal resistance is 65°C /W (JEDEC). This value can be used to calculate the chip temperature.
Thermal resistance is calculated based on the usage of JEDEC standard boards. It is recommended to
consider for the thermal design that the value may vary depending on the area of the board and the positions
of the vias.
See "Power dissipation vs. Operation ambient temperature" in "EXAMPLE OF STANDARD
OPERATION CHARACTERISTICS".
13
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MB39C326
NOTES ON BOARD LAYOUT
A suitable board layout is required for stable operations of this IC.
Place the peripheral component, input capacitance CIN and the output capacitance COUT close to this IC as
much as possible, and connect them with the shortest routes.
The routes with large current, in particular, the routes with variable current must be placed on the front
surface with the shortest routes.
Separate DGND from GND and connect GND at one point close to COUT
.
Provide the ground plane as much as possible on the IC mounted face. It is useful for heat dissipation.
R
FB
C
C
R
VCC
VDD
R
Vout
C
C
C
DGND
L
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MB39C326
EXAMPLE OF STANDARD OPERATION CHARACTERISTICS
Efficiency vs. Load Current
(VIN =3.7V, PowerSave mode)
Efficiency vs. Load Current (VIN=3.7V, PWM mode)
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
100%
90%
80%
70%
60%
50%
Output voltage =
Output voltage =
5.0V
40%
30%
5.0V
3.3V
3.3V
20%
10%
0%
2.0V
0.8V
2.0V
0.8V
0.001
0.010
0.100
1.000
0.001
0.010
0.100
1.000
Load Current (A)
Load Current (A)
Efficiency vs. Load Current
(VO=3.3V, PowerSave mode)
Efficiency vs. Load Current (VO=3.3V, PWM mode)
100%
90%
80%
70%
60%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
50%
40%
30%
20%
10%
0%
XPS=H
XPS=L
ILIMSEL=H
ILIMSEL=L
Output voltage =
5.5V
Output voltage =
5.5V
3.7V
3.7V
2.5V
2.5V
0.001
0.010
0.100
1.000
0.001
0.010
0.100
1.000
Load Current (A)
Load Current (A)
Efficiency vs. Load Current
(VO=5.0V, PowerSave mode)
Efficiency vs. Load Current (VO=5.0V, PWM mode)
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
100%
90%
80%
70%
60%
XPS=H
50%
40%
30%
20%
10%
0%
ILIMSEL=L
XPS=L
Output voltage =
5.5V
ILIMSEL=H
Output voltage =
5.5V
3.7V
2.5V
3.7V
2.5V
0.001
0.010
0.100
1.000
0.001
0.010
0.100
1.000
Load Current (A)
Load Current (A)
15
DS405-00001-2v0-E
MB39C326
Maximum Output Current vs. Input Voltage
(PWM mode)
Maximum Output Current vs. Input Voltage
(Power save mode)
1.4
1.2
1
1.4
1.2
1
Output voltage =
5.0V
4.4V
3.3V
2.0V
1.2V
0.8V
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
Output voltage =
5.0V
4.4V
2.0V
0.8V
3.3V
1.2V
2
3
4
Input Voltage [V]
5
6
2
3
4
5
6
Input Voltage [V]
Load sudden change waveform
VIN=3.7V
IO=0 0.4A
COUT=2.2μF
XPS=H,
ILIMSEL=L
VO, 100mV/div, AC
1
Output Current, 200mA/div
100μs/div
Startup (PWM mode)
Startup (PowerSave mode)
EN, 2V/div
EN, 2V/div
VIN=3.7V, VO=3.3V,
IO=0A
VIN=3.7V, VO=3.3V,
IO=0A
VO, 1V/div
VO, 1V/div
XPS=H
XPS=L
ILIMSEL=L
20μs/div
ILIMSEL=H
20μs/div
20μs/div
20μs/div
16
DS405-00001-2v0-E
MB39C326
VO step response (Rise)
VO step response (Fall)
VIN=3.7V,
VO=4.0V→0.8V
Rload=11Ω
XPS=H
VO, 1V/div
ILIMSEL=L
10μs/div
VIN=3.7V,
=0.8V→4.0V
V
O
VO, 1V/div
Rload=11Ω
XPS=H
ILIMSEL=L
10μs/div
DAC, 2V/div
DAC, 2V/div
10μs/div
10μs/div
Power consumption vs.
Operating ambient temperature
1.2
1.08
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
+25
+50
+75
+100
Temperature [°C]
17
DS405-00001-2v0-E
MB39C326
USAGE PRECAUTION
1. Do not configure the IC over the maximum ratings.
If the IC is used over the maximum ratings, the LSI may be permanently damaged.
It is preferable for the device to be normally operated within the recommended usage conditions.
Usage outside of these conditions can have a bad effect on the reliability of the LSI.
2. Use the devices within recommended operating conditions.
The recommended operating conditions are the recommended values that guarantee the normal
operations of LSI.
The electrical ratings are guaranteed when the device is used within the recommended operating
conditions and under the conditions stated for each item.
3. Printed circuit board ground lines should be set up with consideration for common
impedance.
4. Take appropriate measures against static electricity.
Containers for semiconductor materials should have anti-static protection or be made of conductive
material.
After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
Work platforms, tools, and instruments should be properly grounded.
Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ in series between body and
ground.
5. Do not apply negative voltages.
The use of negative voltages below -0.3 V may cause the parasitic transistor to be activated on LSI
lines, which can cause malfunctions.
NOTES ON MOUNTING
In general, the underfill material and sealing method affect the reliability of mounting.
FUJITSU SEMICONDUCTOR does not evaluate the mounting using the underfill material.
It is advisable for each customer to evaluate the mounting enough.
WL-CSP has a surface boundary between silicon and resin at the side of the package.
Resin may be pulled by the board because of the underfill material and its shape and the state, and stress
may occur at the surface boundary.
The result may vary depending on the board and the underfill material used by each customer; therefore, it
is advisable for each customer to evaluate the mounting enough in order to apply to the products.
When using the underfill materials, be sure to apply the underfill to the silicon side surface as shown below
(fillet formation).
Ensuring wettability of
the silicon
Silicon
Underfill fillet
Resin
Underfill
18
DS405-00001-2v0-E
MB39C326
ORDERING INFORMATION
Part number
Package
Remarks
20-pin plastic WLP
MB39C326PW
(WLP-20P-M01)
EV BOARD ORDERING INFORMATION
EV board number
EV board version No.
Remarks
MB39C326-EVB-01
MB39C326-EVB-01 REV5.0
20pin-WL-CSP
19
DS405-00001-2v0-E
MB39C326
RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION
The LSI products of FUJITSU SEMICONDUCTOR with "E1" are compliant with RoHS Directive, and has
observed the standard of lead, cadmium, mercury, Hexavalent chromium, polybrominated biphenyls (PBB),
and polybrominated diphenyl ethers (PBDE). A product whose part number has trailing characters "E1" is
RoHS compliant.
MARKING
XXXXX
26C
INDEX
LABELING SAMPLE (Lead free version)
Lead-free mark
JEITA logo
JEDEC logo
MB123456P - 789 - GE1
(3N) 1MB123456P-789-GE1 1000
G
Pb
(3N)2 1561190005 107210
QC PASS
PCS
1,000
MB123456P - 789 - GE1
ASSEMBLED IN JAPAN
2006/03/01
MB123456P - 789 - GE1
1/1
1561190005
0605 - Z01A 1000
"ASSEMBLED IN CHINA" is printed on
the label of a product assembled in China.
The part number of a lead-free product has the
trailing characters "E1".
20
DS405-00001-2v0-E
MB39C326
MB39C326PW RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY
LEVEL
[FUJITSU SEMICONDUCTOR Recommended Mounting Conditions]
Item
Mounting Method
Condition
IR (infrared reflow), warm air reflow
2 times
Mounting times
Before opening
Please use it within two years after
manufacture.
Storage period
From opening to the 2nd reflow
Storage conditions
5°C to 30°C, 70% RH or less (the lowest possible humidity)
[Parameters for Each Mounting Method]
IR (infrared reflow)
260 °C
255 °C
170 °C
to
190 °C
(b)
(c)
(d)
(e)
RT
(a)
(d')
H rank: 260°C Max
(a) Temperature Increase gradient
(b) Preliminary heating
(c) Temperature Increase gradient
(d) Actual heating
: Average 1°C/s to 4°C/s
: Temperature 170°C to 190°C, 60s to 180s
: Average 1°C/s to 4°C/s
: Temperature 260°C Max; 255°C or more, 10s or less
(d’)
: Temperature 230°C or more, 40s or less
or
Temperature 225°C or more, 60s or less
or
Temperature 220°C or more, 80s or less
(e) Cooling
: Natural cooling or forced cooling
Note : Temperature : the top of the package body
21
DS405-00001-2v0-E
MB39C326
PACKAGE DIMENSIONS
20-pin plastic WLP
Lead pitch
0.4 mm
2.15 mm × 1.94
Soldering ball
Print
Package width ×
package length
Lead shape
Sealing method
Mounting height
Weight
0.625 mm Max.
0.005 g
Code
(Reference)
S-WF BGA20-2.15 × 1.94-0.40
(WLP-20P-M01)
20-pin plastic WLP
(WLP-20P-M01)
2.15 ± 0.05(.085 ±. 002)
(1.60(.063))
0.40(.016)TYP
X
4
3
2
1
1.94 ± 0.05
(.076 ±. 002)
(1.20(.047))
Y
0.40(.016)
TYP
E
D
C
B
A
INDEX (Laser Marking)
1-0.13 (.005
)
20-ø0.26 ± 0.04
(20-ø.010±.002)
M
ø0.05(.002) XYZ
0.625(.025)MAX
Z
0.21 ± 0.04
(.008 ±. 002)
0.05(.002) Z
Dimensions in mm (inches).
Note: The values in parenthesesare reference values.
C
2011 FUJITSU SEMICONDUCTOR LIMITED W20001Sc-1-1
Please check the latest package dimension at the following URL.
http://edevice.fujitsu.com/package/en-search/
22
DS405-00001-2v0-E
MB39C326
MAJOR CHANGES IN THIS EDITION
A change on a page is indicated by a vertical line drawn on the left side of that page.
Page
Section
Change Results
9
ELECTRICAL CHARACTERISTICS
Revised the values.
23
DS405-00001-2v0-E
MB39C326
FUJITSU SEMICONDUCTOR LIMITED
Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome,
Kohoku-ku Yokohama Kanagawa 222-0033, Japan
Tel: +81-45-415-5858
http://jp.fujitsu.com/fsl/en/
For further information please contact:
For further information please contact:
North and South America
North and South America
FUJITSU SEMICONDUCTOR AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
FUJITSU SEMICONDUCTOR AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600
Fax: +1-408-737-5999
Tel: +1-408-737-5600
Fax: +1-408-737-5999
http://us.fujitsu.com/micro/
http://us.fujitsu.com/micro/
Europe
Europe
FUJITSU SEMICONDUCTOR EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/semiconductor/
FUJITSU SEMICONDUCTOR EUROPE GmbH
Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/semiconductor/
Korea
Korea
FUJITSU SEMICONDUCTOR KOREA LTD.
902 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://www.fujitsu.com/kr/fsk/
FUJITSU SEMICONDUCTOR KOREA LTD.
902 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://www.fujitsu.com/kr/fsk/
All Rights Reserved.
FUJITSU SEMICONDUCTOR LIMITED, its subsidiaries and affiliates (collectively, "FUJITSU SEMICONDUCTOR")
reserves the right to make changes to the information contained in this document without notice. Please contact your
FUJITSU SEMICONDUCTOR sales representatives before order of FUJITSU SEMICONDUCTOR device.
Information contained in this document, such as descriptions of function and application circuit examples is presented
solely for reference to examples of operations and uses of FUJITSU SEMICONDUCTOR device. FUJITSU
SEMICONDUCTOR disclaims any and all warranties of any kind, whether express or implied, related to such
information, including, without limitation, quality, accuracy, performance, proper operation of the device or
non-infringement. If you develop equipment or product incorporating the FUJITSU SEMICONDUCTOR device based on
such information, you must assume any responsibility or liability arising out of or in connection with such information or
any use thereof. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any damages whatsoever arising
out of or in connection with such information or any use thereof.
Nothing contained in this document shall be construed as granting or conferring any right under any patents, copyrights, or
any other intellectual property rights of FUJITSU SEMICONDUCTOR or any third party by license or otherwise, express
or implied. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any infringement of any intellectual
property rights or other rights of third parties resulting from or in connection with the information contained herein or use
thereof.
The products described in this document are designed, developed and manufactured as contemplated for general use
including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not
designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless
extremely high levels of safety is secured, could lead directly to death, personal injury, severe physical damage or other
loss (including, without limitation, use in nuclear facility, aircraft flight control system, air traffic control system, mass
transport control system, medical life support system and military application), or (2) for use requiring extremely high
level of reliability (including, without limitation, submersible repeater and artificial satellite). FUJITSU
SEMICONDUCTOR shall not be liable for you and/or any third party for any claims or damages arising out of or in
connection with above-mentioned uses of the products.
Any semiconductor devices fail or malfunction with some probability. You are responsible for providing adequate designs
and safeguards against injury, damage or loss from such failures or malfunctions, by incorporating safety design measures
into your facility, equipments and products such as redundancy, fire protection, and prevention of overcurrent levels and
other abnormal operating conditions.
The products and technical information described in this document are subject to the Foreign Exchange and Foreign Trade
Control Law of Japan, and may be subject to export or import laws or regulations in U.S. or other countries. You are
responsible for ensuring compliance with such laws and regulations relating to export or re-export of the products and
technical information described herein.
All company names, brand names and trademarks herein are property of their respective owners.
Edited: Sales Promotion Department
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