SSM9980GJ [SSC]
N-channel Enhancement-mode Power MOSFET; N沟道增强模式功率MOSFET
| 型号： | SSM9980GJ |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | N-channel Enhancement-mode Power MOSFET |
| 文件： | 总6页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM9980GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
DESCRIPTION
The SSM9980Gx acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
BVDSS
RDS(ON)
ID
80V
45mW
21A
The SSM9980GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
The through-hole version, the SSM9980GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
G
G
D
D
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
S
S
TO-251 (suffix J)
TO-252 (suffix H)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
80
Units
Drain-source voltage
Gate-source voltage
V
V
VGS
±25
21
Continuous drain current, T = 25°C
ID
A
C
T = 100°C
13.4
80
A
C
IDM
PD
Pulsed drain current1
A
Total power dissipation, T = 25°C
41
W
C
Linear derating factor
0.33
W/°C
TSTG
TJ
Storage temperature range
-55 to 150
-55 to 150
°C
°C
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Units
°C/W
°C/W
R
ΘJC
ΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
3.0
R
110
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
9/19/2006 Rev.3.1
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SSM9980GH,J
(at Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-source breakdown voltage
80
-
-
-
V
∆BVDSS/∆Tj
Breakdown voltage temperature coefficient Reference to 25°C, ID=1mA
0.07
-
-
V/°C
mΩ
RDS(ON)
Static drain-source on-resistance
VGS=10V, ID=12A
-
45
VGS=4.5V, ID=8A
VDS=VGS, ID=250uA
VDS=5V, ID=12A
-
1
-
-
-
-
-
-
-
-
-
-
55
mΩ
V
VGS(th)
gfs
Gate threshold voltage
3
Forward transconductance
Drain-source leakage current
20
-
-
S
IDSS
V
uA
uA
nA
nC
nC
nC
ns
ns
ns
DS=80V, VGS=0V
10
VDS=64V ,VGS=0V, Tj = 150°C
VGS=±25V
-
100
IGSS
Qg
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
-
±100
ID=12A
18
5
30
-
Qgs
Qgd
td(on)
tr
VDS=64V
VGS=4.5V
11
11
20
29
30
-
VDS=40V
-
ID=12A
-
-
td(off)
tf
Turn-off delay time
Fall time
RG=3.3Ω , VGS=10V
RD=3.3Ω
-
-
-
-
ns
Ciss
Coss
Crss
Input capacitance
VGS=0V
-
1810 2900 pF
Output capacitance
Reverse transfer capacitance
VDS=25V
-
-
135
96
-
pF
pF
f=1.0MHz
-
Rg
Gate resistance
f=1.0MHz
1.6
Ω
Source-Drain Diode
Symbol
Parameter
Forward voltage 2
Reverse-recovery time 2
Reverse-recovery charge
Test Conditions
Min. Typ. Max. Units
VSD
trr
IS=20A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
-
-
1.2
V
-
57
140
-
-
ns
Qrr
-
nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
9/19/2006 Rev.3.1
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SSM9980GH,J
60
50
40
30
20
10
0
50
40
30
20
10
0
10V
6.0V
5.0V
4.5V
10V
6.0V
5.0V
4.5V
T C =25 o C
T C =150 o C
V G =3.0V
V G =3.0V
0
3
6
9
12
15
18
0
3
6
9
12
15
18
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
54
50
46
42
38
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I D = 12 A
V G =10V
I D = 8 A
T C =25 o C
Ω
Ω
Ω
Ω
-50
0
50
100
150
3
5
7
9
11
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
8
6
4
2
0
3
2.5
2
T j =150 o C
T j =25 o C
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
9/19/2006 Rev.3.1
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SSM9980GH,J
f=1.0MHz
12
10
8
10000
1000
100
I D = 12 A
C iss
V DS = 4 0V
V DS = 50 V
V DS = 64 V
6
C oss
C rss
4
2
0
10
0
10
20
30
40
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
1
Duty factor=0.5
10us
100us
0.2
0.1
1ms
0.1
0.05
PDM
10ms
100ms
t
0.02
0.01
T
T C =25 o C
Duty factor = t/T
DC
Single Pulse
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
9/19/2006 Rev.3.1
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SSM9980GH,J
PHYSICAL DIMENSIONS: TO-251 (I-PAK)
D
Millimeters
A
SYMBOLS
D1
MIN
NOM MAX
c1
A
A1
B1
B2
c
2.20
0.90
0.50
0.60
0.45
0.45
6.40
5.20
6.80
5.40
1.40
--
2.30
1.20
0.60
0.72
0.50
0.50
6.60
5.35
7.00
5.60
1.50
2.30
7.50
1.60
2.40
1.50
0.70
0.90
0.60
0.55
6.80
5.50
7.20
5.80
1.60
--
E2
E
E1
c1
D
D1
E
A1
B2
B1
E1
E2
e
F
F1
F
7.20
1.50
7.80
1.80
F1
c
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
e
e
PHYSICAL DIMENSIONS: TO-252 (D-PAK)
E
b3
A
S
Y
M
B
O
L
TO-252-3L
c2
MILLIMETERS
MIN.
MAX.
A
1.80
2.80
A1
b
0.00
0.40
4.80
0.35
0.13
1.00
5.90
0.65
b3
c
c2
D
0.40
5.10
0.89
6.30
A
A
e
E
e
6.00
7.00
SEE VIEW B
b
2.30 BSC
H
7.80
11.05
WITH PLATING
L
1.00
2.20
2.55
3.05
L1
BASE METAL
L2
L3
L4
0.35
0.50
0.50
0.65
2.03
1.20
SECTION A-A
GAUGE PLANE
SEATING PLANE
0°
8°
θ
L
L1
VIEW B
9/19/2006 Rev.3.1
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SSM9980GH,J
PART MARKING
PART NUMBER: 9980GH or 9989GJ
XXXXXX
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
YWWSSS
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
TO-252: 3000 pcs in antistatic tape on a reel packed inside a moisture barrier bag (MBB).
TO-251: 1000pcs in tubes packed inside a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/19/2006 Rev.3.1
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