RU0003H_15 [SSDI]
ULTRA FAST RECTIFIER;
| 型号： | RU0003H_15 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | ULTRA FAST RECTIFIER |
| 文件： | 总2页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR1ASM & SMS
thru
SDR1MSM & SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1.0 AMPS
Designer’s Data Sheet
50 ─ 1000 VOLTS
50 – 70 nsec ULTRA FAST RECTIFIER
Part Number/Ordering Information 1/
__ __ __
SDR1
2/
└
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
Screening
__ = Not Screened
TX = TX Level
TXV = TXV
FEATURES:
•
Ultra Fast Recovery: 50-70 ns Max @ 25ºC 4/
80-120 ns Max @ 100ºC 4/
S = S Level (for SM, use –S)
•
•
•
•
•
•
•
Single Chip Construction
PIV to 1000 Volts (1200V Version available)
Low Reverse Leakage Current
Hermetically Sealed
Package Type
SM = Surface Mount Round Tab
SMS = Surface Mount Square Tab
For High Efficiency Applications
Available in Round and Square Tab Versions
Metallurgically Bonded
A = 50 V
B = 100 V
D = 200 V
G = 400 V
J = 600 V
K = 800 V
M = 1000 V
Voltage
TX, TXV, and S-Level Screening Available 2/
•
Hyper Fast Version available
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
SDR1A ..
SDR1B ..
SDR1D ..
SDR1G ..
SDR1J ..
SDR1K ..
SDR1M ..
50
100
200
400
600
800
1000
Peak Repetitive Reverse Voltage
And
VRRM
VRWM
VR
Volts
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25ºC)
1
Amp
IO
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25ºC)
25
Amps
IFSM
-65 to +175
28
Operating & Storage Temperature
ºC
T
OP and TSTG
RθJE
Thermal Resistance, Junction to End Tab
SM & SMS
ºC/W
NOTES:
SM (Round Tab)
SMS (Square Tab)
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003H
DOC
SDR1ASM & SMS
thru
SDR1MSM & SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
Maximum Limit
Package
SYMBOL
VF1
CHARACTERISTICS
UNIT
SM
1.3
SMS
0.96
1.3
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
SDR1A .. thru SDR1D ..
SDR1G .. thru SDR1J ..
SDR1K .. thru SDR1M ..
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 µs Pulse, TA = 25ºC)
1.3
Vdc
2.5
1.9
1.45
1.45
2.65
2.1
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300 µs Pulse, TA = -55ºC)
2.1
VF2
IR1
IR2
CJ
trr
Vdc
μA
μA
pf
2.3
Reverse Leakage Current
5
(Rated VR, 300 µs Pulse Minimum , TA = 25ºC)
Reverse Leakage Current
250
(Rated VR, 300 µs Pulse Minimum , TA = 100ºC)
15
15
10
50
60
70
40
25
15
50
60
70
Junction Capacitance
(VR = 10Vdc, TA = 25ºC , f = 1MHz)
Reverse Recovery Time 4/
ns
Round Tab Surface Mount (SM):
DIMENSIONS
DIM. MIN. MAX.
DIMENSIONS
DIM. MIN. MAX.
Square Tab Surface Mount (SMS) :
A
B
C
D
.095” .105”
.190” .210”
.010” .030”
A
B
C
D
.134” .153”
.200” .280”
.022” .028”
---
---
.002”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0003H
DOC
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