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元器件品牌
SSG55N60
[SSDI]
55 AMP /600 Volts 1.65 V saturation ultrafast IGBT; 55 AMP / 600伏特1.65 V饱和超快IGBT
元器件型号：
SSG55N60
生产厂家：
SOLID STATES DEVICES, INC
描述和应用：
55 AMP /600 Volts 1.65 V saturation ultrafast IGBT
55 AMP / 600伏特1.65 V饱和超快IGBT
双极性晶体管
PDF文件：
总2页 (文件大小：64K)
下载文档：
下载PDF数据表文档文件
型号参数：SSG55N60参数
查看货源
SSG55N60/3S
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel,
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SSDI
SSG55N60/3TX
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel,
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0
SSDI
SSG55N60/3TXV
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel,
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156
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0
SSDI
SSG55N60_1
1.65 V saturation ultrafast IGBT
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156
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13
SSDI
SSG55N60M
1.65 V saturation ultrafast IGBT
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156
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13
SSDI
SSG55N60M
55 AMP /600 Volts 1.65 V saturation ultrafast IGBT
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156
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13
SSDI
SSG55N60MS
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN
Warning
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156
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0
SSDI
SSG55N60MTX
暂无描述
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156
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0
SSDI
SSG55N60MTXV
暂无描述
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156
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0
SSDI
SSG55N60N
55 AMP /600 Volts 1.65 V saturation ultrafast IGBT
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156
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8
SSDI
SSG55N60N
1.65 V saturation ultrafast IGBT
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156
-
14
SSDI
SSG55N60NS
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
Warning
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156
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0
SSDI
SSG55N60NTX
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
SSDI
SSG55N60NTX
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
SSDI
SSG55N60NTXV
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
SSDI
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