AM83135-010 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM83135-010 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM83135-010
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT
10 W MIN. WITH 5.0 dB GAIN
=
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
BRANDING
83135-10
AM83135-010
DESCRIPTION
The AM83135-010 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applica-
tions.
PIN CONNECTION
This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 out-
put VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech-
niques ensure high reliability and product consis-
tency (including phase characteristics).
The AM83135-010 is supplied in the IMPAC
hermetic metal/ceramic package with internal
input/output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
PDISS
IC
Parameter
Value
50
Unit
Power Dissipation*
Device Current*
(TC ≤ 50°C)
W
A
2
VCC
TJ
Collector-Supply Voltage*
46
V
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
°
TSTG
− 65 to +200
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance*
4.0
*Applies only to rated RF amplifier operation
1/4
July 27, 1994
AM83135-010
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
STATIC
case
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO IC = 7 mA
IE = 0 mA
55
3.5
55
—
—
—
—
—
—
V
V
BVEBO
IE = 1 mA
IC = 0 mA
—
BVCER IC = 7 mA
RBE = 10 Ω
VCE = 40 V
IC = 600 mA
—
V
ICES
hFE
VBE = 0 V
VCE = 5 V
5
mA
—
30
—
DYNAMIC
Symbol
POUT
Value
Test Conditions
Unit
Min.
10
Typ. Max.
f = 3.1 − 3.5 GHz
f = 3.1 − 3.5 GHz
f = 3.1 − 3.5 GHz
PIN 3.2 W
VCC 40 V
—
—
—
—
—
—
W
%
=
=
η
c
POUT 10 W
VCC 40 V
30
=
=
PG
POUT 10 W
VCC 40 V
5.0
dB
=
=
Note:
Pulse Width
100µSec
10%
=
=
Duty Cycle
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
2/4
AM83135-010
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
L
Z
CL
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
H
Z
IN
H
FREQ.
ZIN (Ω)
ZCL (Ω)
L
M
H
3.1 GHz
3.3 GHz
3.5 GHz
12.1 − j 1.6
10.0 + j 1.9
5.5 + j 1.7
12.7 + 16.0
14.3 + j 9.5
6.8 + j 7.7
=
L
=
PIN 3.2W
VCC = 40V
=
=
Normalized to 50 ohms
TEST CIRCUIT
All dimensions are in mils.
Substrate material: .025” thick Al O
2
3
C5
C6
C7
:
:
:
0.1 µF 50V Disc Ceramic Capacitor
100 µf 63V Electrolytic Capacitor
33 pF 50V Chip Capacitor
C1,C2 : 33 pF 50V Chip Capacitor
C3
C4
:
:
1 µf 50V Electrolytic Capacitor
1000 pF 200V Feedthru Capacitor
L1,L2 : RF Choke, 2 Turns #26 Tinned Wire, .080” I.D.
3/4
AM83135-010
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0221 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
4/4
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