BULK128D [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | BULK128D |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BULK128D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
SGS-THOMSON PREFERRED SALESTYPE
ORDERING CODES : BULK128D-A AND
BULK128D-B
■
■
■
■
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
VERY HIGH SWITCHING SPEED
3
2
1
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
SOT-82
FLUORESCENT LIGHTING
■
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
INTERNAL SCHEMATIC DIAGRAM
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
700
V
V
400
9
V
4
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
8
A
IB
2
A
IBM
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
4
55
A
Ptot
Tstg
Tj
W
oC
oC
-65 to 150
150
Max. Operating Junction Temperature
1/7
December 1997
BULK128D
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
2.27
80
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 700 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = -1.5 V) VCE = 700 V
100
500
µA
µA
Tj = 125 oC
ICEO
Collector-Emitter
Leakage Current
(IB = 0)
VCE = 400 V
250
µA
VEBO
Emitter-Base Voltage
IE = 10 mA
9
V
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 100 mA
L = 25 mH
400
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
0.7
1.0
1.5
V
V
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2.5 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
1.1
1.2
1.3
V
V
V
hFE
Vf
DC Current Gain
IC = 10 mA
IC = 2 A
VCE = 5 V
VCE = 5 V
10
8
Forward Voltage Drop If = 2 A
2.5
V
RESISTIVE LOAD
Storage Time
BULK128D-A
BULK128D-B
Fall Time
VCC = 250 V
IC = 2 A
IB2 = -0.4 A
ts
IB1 = 0.4 A
Tp = 30 µs
(see fig. 2)
1.7
2.0
2.5
2.9
µs
µs
µs
tf
0.2
INDUCTIVE LOAD
Storage Time
Fall Time
VCl = 200
IB1 = 0.4 A
V
IC = 2 A
VBE(off) = -5 V
L = 200 µH
ts
tf
0.6
0.1
µs
µs
RBB = 0
Ω
(see fig. 1)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Note: Ordering codes:
- BULK128D-A
- BULK128D-B.
Please contact your nearest ST Microelectronics sales office for delivery details.
2/7
BULK128D
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BULK128D
Inductive Fall Time
InductiveStorage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BULK128D
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
BULK128D
SOT-82 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.019
0.04
MAX.
0.307
0.444
0.035
0.030
0.106
0.05
A
B
10.5
0.7
10.8
0.9
b
b1
C
0.49
2.4
0.75
2.7
c1
D
1.0
1.3
0.039
0.606
15.4
16
0.629
e
2.2
0.087
e3
F
4.15
4.65
2.54
0.163
0.183
3.8
0.150
0.100
0.084
H
H2
2.15
C
A
H2
c1
e
b
b1
e3
P032A
6/7
BULK128D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
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