BULT116D [STMICROELECTRONICS]
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 中压快速开关NPN功率晶体管
| 型号： | BULT116D |
| 厂家： | 
ST |
| 描述： | MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总6页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BULT116D
®
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
■
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
■
■
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
AT 110 V A.C. MAINS
1
2
3
■
SOT-32
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
400
V
V
200
9
V
5
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
10
A
IB
2
A
IBM
Base Peak Current (tp < 5 ms)
4
45
A
o
Ptot
Total Dissipation at Tc = 25 C
W
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/6
February 2003
BULT116D
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
2.78
80
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 400 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
100
500
µA
µA
o
VCE = 400 V
Tc = 125 C
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 10 mA
9
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
VCE = 200 V
200
V
ICEO
Collector Cut-off
Current (IB = 0)
250
µA
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 3 A
IC = 5 A
IB = 50 mA
IB = 0.1 A
IB = 0.6 A
IB = 1 A
0.25
0.4
0.7
1.2
V
V
V
V
VBE(sat)
hFE
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 5 A
IB = 0.1 A
IB = 1 A
1.1
1.5
V
V
DC Current Gain
IC = 10 mA
IC = 5 A
VCE = 5 V
VCE = 5 V
10
8
20
RESISTIVE LOAD
Rise Time
Fall Time
VCC = 125 V
IB1 = 0.4 A
tp = 30 µs
IC = 2 A
IB2 = -0.4 A
(see figure 2)
tr
tf
ts
0.2
0.2
1.4
µs
µs
µs
0.4
Storage Time
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
VBE = -5 V
Vclamp = 180 V
IB1 = 0.4 A
L = 500 µH
(see figure 1)
ts
tf
0.5
0.1
µs
µs
VF
Diode Forward Voltage IC = 2 A
1.5
V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
2/6
BULT116D
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching Time Resistive Load
Switching Time Inductive Load
3/6
BULT116D
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
4/6
BULT116D
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.015
0.094
0.039
0.606
MAX.
0.307
0.425
0.035
0.025
0.106
0.051
0.630
A
B
10.5
0.7
10.8
0.9
b
b1
C
c1
D
e
0.40
2.4
0.65
2.7
1.0
1.3
15.4
16.0
2.2
4.4
3.8
0.087
0.173
0.150
e3
F
G
H
H2
I
3
3.2
0.118
0.126
0.100
2.54
2.15
1.27
0.3
0.084
0.05
0.011
10o
O
V
10o
1: Base
2: Collector
3: Emitter
0016114/B
5/6
BULT116D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
6/6
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