BULK128_08 [STMICROELECTRONICS]

High voltage fast-switching NPN power transistor; 高压快速开关NPN功率晶体管
BULK128_08
型号: BULK128_08
厂家: ST    ST
描述:

High voltage fast-switching NPN power transistor
高压快速开关NPN功率晶体管

晶体 开关 晶体管 高压
文件: 总11页 (文件大小:225K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BULK128  
High voltage fast-switching  
NPN power transistor  
Features  
High voltage capability  
Minimum lot-to-lot spread for reliable operation  
Very high switching speed  
Applications  
3
2
1
Electronic ballast for fluorescent lighting  
SOT-82  
Description  
The device is manufactured using high voltage  
multi-epitaxial planar technology for high  
switching speeds and medium voltage capability.  
It uses a cellular emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA. The device is  
designed for use in lighting applications and low  
cost switch-mode power supplies.  
Figure 1.  
Internal schematic diagram  
Table 1.  
Order code  
BULK128  
Device summary  
Marking  
Package  
Packaging  
BULK128  
SOT-82  
Tube  
June 2008  
Rev 2  
1/11  
www.st.com  
11  
Contents  
BULK128  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . 5  
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
2/11  
BULK128  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Collector-emitter voltage (VBE = 0)  
Collector-emitter voltage (IB = 0)  
Emitter-base voltage (IC= 0, IB= 2 A, tp< 10 µs)  
Collector current  
Value  
Unit  
V
VCES  
VCEO  
VEBO  
IC  
700  
400  
V
V(BR)EBO  
V
4
A
ICM  
IB  
Collector peak current (tP < 5ms)  
Base current  
8
A
2
A
IBM  
Ptot  
Tstg  
TJ  
Base peak current (tP < 5ms)  
Total dissipation at Tc = 25°C  
Storage temperature  
4
55  
A
W
°C  
°C  
-65 to 150  
150  
Max. operating junction temperature  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
2.27  
80  
Unit  
°C/W  
°C/W  
Rthj-case  
Thermal resistance junction - case  
Thermal resistance junction - ambient  
Rthj-amb  
3/11  
Electrical characteristics  
BULK128  
2
Electrical characteristics  
(T  
= 25°C unless otherwise specified)  
case  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
VCE =700 V  
Collector cut-off current  
(VBE = 0)  
50  
µA  
µA  
ICES  
VCE =700 V TC = 125°C  
500  
Emitter base breakdown  
voltage  
V(BR)EBO  
IE = 10 mA  
9
18  
V
(IC = 0)  
Collector-emitter  
sustaining voltage  
(1)  
IC =10 mA  
400  
VCEO(sus)  
V
(IB = 0)  
Collector cut-off current  
(IB = 0)  
ICEO  
VCE =400 V  
250  
µA  
IC = 0.5 A  
_
IB = 0.1 A  
IB = 0.2 A  
IB = 0.5 A  
IB = 1 A  
0.7  
1
V
V
V
V
IC = 1 A _ _  
IC = 2.5 A _ _  
IC = 4 A _ _  
Collector-emitter  
saturation voltage  
(1)  
VCE(sat)  
1.5  
0.5  
IC = 0.5 A  
IB = 0.1 A  
IB = 0.2 A  
IB = 0.5 A  
1.1  
1.2  
1.3  
V
V
V
Base-emitter saturation  
voltage  
(1)  
IC = 1 A _ _  
VBE(sat)  
IC = 2.5 A  
_
IC = 10 mA  
_
VCE = 5 V  
10  
14  
(1)  
DC current gain  
hFE  
IC = 2 A _ _ VCE = 5 V  
28  
IC = 2 A  
VCC = 125 V  
IB1 = -0.4 A  
Resistive load  
Storage time  
Fall time  
ts  
tf  
IB1 = 0.4 A  
tp = 30 µs  
IC = 2 A  
1.5  
3
µs  
µs  
0.2  
0.4  
Vclamp = 200 V  
VBE(off) = -5 V  
Inductive load  
Storage time  
Fall time  
ts  
tf  
IB1 = 0.4 A  
RBB = 0  
0.6  
0.1  
1
µs  
µs  
0.2  
1. Pulsed duration = 300 ms, duty cycle 1.5%  
4/11  
BULK128  
Electrical characteristics  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Figure 4.  
Figure 6.  
Safe operating area  
Figure 3.  
Derating curve  
DC current gain  
Figure 5.  
DC current gain  
Collector-emitter saturation Figure 7.  
voltage  
Base-emitter saturation  
voltage  
5/11  
Electrical characteristics  
Figure 8.  
BULK128  
Inductive load fall time  
Figure 9.  
Inductive load storage time  
Figure 10. Resistive load fall time  
Figure 11. Resistive load storage time  
Figure 12. Reverse biased operating  
area  
6/11  
BULK128  
Test circuit  
3
Test circuit  
Figure 13. Inductive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive Resistor  
3) Fast recovery rectifier  
Figure 14. Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive Resistor  
7/11  
Package mechanical data  
BULK128  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
8/11  
BULK128  
Package mechanical data  
SOT-82 mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
B
2.40  
0.70  
0.49  
10.50  
7.40  
2.04  
4.07  
15.40  
2.70  
0.90  
0.75  
10.80  
7.80  
2.54  
5.08  
16  
B1  
D
E
e
e1  
L
Q
Q1  
H2  
I
3.80  
1
1.30  
2.07  
1.27  
0016115_F  
9/11  
Revision history  
BULK128  
5
Revision history  
Table 5.  
Date  
Document revision history  
Revision  
Changes  
21-Nov-2001  
18-Jun-2008  
1
2
Initial release  
Updated mechanical data  
10/11  
BULK128  
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11/11  

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