BULK128_08 [STMICROELECTRONICS]
High voltage fast-switching NPN power transistor; 高压快速开关NPN功率晶体管型号: | BULK128_08 |
厂家: | ST |
描述: | High voltage fast-switching NPN power transistor |
文件: | 总11页 (文件大小:225K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BULK128
High voltage fast-switching
NPN power transistor
Features
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications
3
2
1
■ Electronic ballast for fluorescent lighting
SOT-82
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA. The device is
designed for use in lighting applications and low
cost switch-mode power supplies.
Figure 1.
Internal schematic diagram
Table 1.
Order code
BULK128
Device summary
Marking
Package
Packaging
BULK128
SOT-82
Tube
June 2008
Rev 2
1/11
www.st.com
11
Contents
BULK128
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . 5
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
BULK128
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC= 0, IB= 2 A, tp< 10 µs)
Collector current
Value
Unit
V
VCES
VCEO
VEBO
IC
700
400
V
V(BR)EBO
V
4
A
ICM
IB
Collector peak current (tP < 5ms)
Base current
8
A
2
A
IBM
Ptot
Tstg
TJ
Base peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
4
55
A
W
°C
°C
-65 to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
2.27
80
Unit
°C/W
°C/W
Rthj-case
Thermal resistance junction - case
Thermal resistance junction - ambient
Rthj-amb
3/11
Electrical characteristics
BULK128
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
VCE =700 V
Collector cut-off current
(VBE = 0)
50
µA
µA
ICES
VCE =700 V TC = 125°C
500
Emitter base breakdown
voltage
V(BR)EBO
IE = 10 mA
9
18
V
(IC = 0)
Collector-emitter
sustaining voltage
(1)
IC =10 mA
400
VCEO(sus)
V
(IB = 0)
Collector cut-off current
(IB = 0)
ICEO
VCE =400 V
250
µA
IC = 0.5 A
_
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
IB = 1 A
0.7
1
V
V
V
V
IC = 1 A _ _
IC = 2.5 A _ _
IC = 4 A _ _
Collector-emitter
saturation voltage
(1)
VCE(sat)
1.5
0.5
IC = 0.5 A
IB = 0.1 A
IB = 0.2 A
IB = 0.5 A
1.1
1.2
1.3
V
V
V
Base-emitter saturation
voltage
(1)
IC = 1 A _ _
VBE(sat)
IC = 2.5 A
_
IC = 10 mA
_
VCE = 5 V
10
14
(1)
DC current gain
hFE
IC = 2 A _ _ VCE = 5 V
28
IC = 2 A
VCC = 125 V
IB1 = -0.4 A
Resistive load
Storage time
Fall time
ts
tf
IB1 = 0.4 A
tp = 30 µs
IC = 2 A
1.5
3
µs
µs
0.2
0.4
Vclamp = 200 V
VBE(off) = -5 V
Inductive load
Storage time
Fall time
ts
tf
IB1 = 0.4 A
RBB = 0
0.6
0.1
1
µs
µs
0.2
1. Pulsed duration = 300 ms, duty cycle ≤1.5%
4/11
BULK128
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
Figure 3.
Derating curve
DC current gain
Figure 5.
DC current gain
Collector-emitter saturation Figure 7.
voltage
Base-emitter saturation
voltage
5/11
Electrical characteristics
Figure 8.
BULK128
Inductive load fall time
Figure 9.
Inductive load storage time
Figure 10. Resistive load fall time
Figure 11. Resistive load storage time
Figure 12. Reverse biased operating
area
6/11
BULK128
Test circuit
3
Test circuit
Figure 13. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 14. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive Resistor
7/11
Package mechanical data
BULK128
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/11
BULK128
Package mechanical data
SOT-82 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
2.40
0.70
0.49
10.50
7.40
2.04
4.07
15.40
2.70
0.90
0.75
10.80
7.80
2.54
5.08
16
B1
D
E
e
e1
L
Q
Q1
H2
I
3.80
1
1.30
2.07
1.27
0016115_F
9/11
Revision history
BULK128
5
Revision history
Table 5.
Date
Document revision history
Revision
Changes
21-Nov-2001
18-Jun-2008
1
2
Initial release
Updated mechanical data
10/11
BULK128
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