BULK38D [ETC]
;
| 型号： | BULK38D |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总7页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUL38D
BULK38D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
■
SGS-THOMSON PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
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■
■
■
■
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125oC
HIGH RUGGEDNESS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
3
3
2
2
1
1
TO-220
SOT-82
APPLICATIONS
■
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
■
SWITCH MODE POWER SUPPLIES
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
The BUL38D and BULK38D are manufactured
using high voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage withstand capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BUL38D
BULK38D
VCES
VCEO
VEBO
IC
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
800
450
9
V
V
V
5
A
ICM
IB
Collector Peak Current (tp < 5 ms)
Base Current
8
A
2
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature Range
Max. Operating Junction Temperature
4
A
70
60
W
oC
oC
-65 to 150
150
1/7
December 1994
BUL38D/BULK38D
THERMAL DATA
TO220
SOT-82
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
2.08
80
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 800 V
100
500
µA
µA
VCE = 800 V Tj = 125 oC
VCE = 450 V
ICEO
Collector Cut-off
Current (IB = 0)
250
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 100 mA L = 25 mH
IE = 10 mA
450
9
V
VEBO
Emitter-Base Voltage
(IC = 0)
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
IC = 3 A IB = 0.75 A
0.5
0.7
1.1
V
V
V
VBE(sat)
hFE
Base-Emitter
Saturation Voltage
IC = 1 A IB = 0.2 A
IC = 2 A IB = 0.4 A
1.1
1.2
V
V
DC Current Gain
IC = 2 A VCE = 5 V
8
IC = 10 mA VCE = 5 V
10
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
IB1 = 0.4 A
ts
tf
V
BE (off) = -5 V RBB = 0 Ω
1
55
1.8
100
µs
ns
VCL = 250 V
L = 200 µH
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
VBE (off) = -5 V RBB = 0 Ω
IB1 = 0.4 A
ts
tf
1.3
100
µs
ns
VCL = 250 V
L = 200 µH
Tj = 125 oC
Vf
Diode Forward Voltage IC = 2 A
2.5
V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas for TO-220
Safe Operating Areas for SOT-82
2/7
BUL38D/BULK38D
Derating Curves
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Reverse Biased SOA
3/7
BUL38D/BULK38D
Inductive Fall Time
Inductive Storage Time
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/7
BUL38D/BULK38D
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
5/7
BUL38D/BULK38D
SOT-82 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.019
0.04
MAX.
0.307
0.445
0.035
0.030
0.106
A
B
7.4
10.5
0.7
11.3
0.9
b
b1
C
c1
D
e
0.49
2.4
0.75
2.7
1.2
15.7
2.2
0.047
0.618
0.087
0.173
0.150
0.100
e3
F
4.4
3.8
H
2.54
C
A
c1
e
b
b1
e3
P032A
6/7
BUL38D/BULK38D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
7/7
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