ITA25B1 [STMICROELECTRONICS]
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION; 双向TRANSILTM数组，数据线保护
| 型号： | ITA25B1 |
| 厂家： | 
ST |
| 描述： | BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ITA6V5B1 / ITA10B1
ITA18B1 / ITA25B1
BIDIRECTIONAL TRANSILTM ARRAY
FOR DATALINE PROTECTION
Application Specific Discretes
TM
A.S.D.
APPLICATIONS
Differential data transmission lines protection:
- RS-232
- RS-423
- RS-422
- RS-485
FEATURES
SO8
HIGH SURGE CAPABILITY TRANSIL ARRAY
IPP = 40 A (8/20µs)
PEAK PULSE POWER : 300 W (8/20µs)
UPTO5 BIDIRECTIONALTRANSILFUNCTIONS
LOWCLAMPINGFACTOR(VCL / VBR) ATHIGH
CURRENT LEVEL
LOWLEAKAGECURRENT
ESD PROTECTION UP TO 15kV
FUNCTIONAL DIAGRAM
DESCRIPTION
Transil diode arrays provide high overvoltage
protectionby clamping action. Their instantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devicessuch as MOS Technologyand low voltage
suppliedIC’s.
I/O
I/O
1 1
8
7
6
G N D
2
2
3
4
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
I/O3
I/O 4
5 G N D
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
IEC 1000-4-2 : level 4
IEC 1000-4-4 : level 4
IEC 1000-4-5 : level 2
MIL STD 883C - Method3015-6 : class 3
(human body model)
January 1998 Ed: 2
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ITA6V5B1 / ITA10B1 / ITA18B1 / ITA25B1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (8/20µs)
(see note 1)
Tj initial = Tamb
Tj initial = Tamb
300
W
Peak pulse current (8/20µs) (see note 1)
IPP
I2t
40
A
Wire I2t value (see note 1)
0.6
A2s
Tstg
Tj
Storage temperaturerange
Maximum operating junction temperature
- 55 to + 150
125
°C
C
°
TL
Maximum lead temperaturefor soldering during 10s
260
°C
%I
pp
Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
open circuit caused by the wire melting.
8
s
100
50
Pulse wave form 8/20
s
t
0
20
s
ELECTRICALCHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
VBR
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
Peak pulse current
VCL
RM
IRM
IPP
α
T
Voltage temperaturecoefficient
Junction capacitance
C
Types
IRM
@
VRM
VBR
min.
note 2
V
@
IR
VCL
@
IPP
VCL
max.
@
IPP
αT
C
max.
8/20 s
8/20 s
max.
max.
note 3
pF
µ
µ
note 2
V
note 2
V
A
V
5
mA
1
A
A
10-4/ C
µ
°
10
4
6.5
10
10
12
25
4
8
750
ITA6V5B1
ITA10B1
ITA18B1
ITA25B1
8
10
18
25
1
1
1
15
25
33
10
10
10
19
28
38
25
25
25
570
350
300
4
15
24
9
4
12
Note 2 : Between I/O pin and ground.
Note 3 : Between two input Pins at 0V Bias, F = 1 MHz.
Preferred types in bold
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ITA6V5B1 / ITA10B1 / ITA18B1 /ITA25B1
Fig. 1 :
exponentialpulse duration.
Typical peak pulse power versus
Fig. 2 : Clamping voltage versus peak pulse
current (exponentialwaveform 8/20 µs).
P
(W)
PP
1E+04
1E+03
T
initial = 25oC
j
ITA25B1
ITA18B1
ITA10B1
ITA6V5B1
1E+02
1E+01
t
(ms) expo
P
1E-03
1E-02
1E-01
1E+00 1E+01 1E+02
Fig. 3 :
Fig. 4 :
Junction capacitance versus reverse
applied voltage for one input/output (typical
values).
Peak current IDC inducing open circuit of
the wire for one input/outputversus pulse duration
(typical values).
I
(A)
DC
1E+03
1E+02
exponential waveform
1E+01
1E+00
t
(ms)
1E+01
1E-02
1E-01
1E+00
Fig. 5 : Relative variation of leakage current
versus junction temperature
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ITA6V5B1 / ITA10B1 / ITA18B1 / ITA25B1
APPLICATION INFORMATION
Types
Maximum differential voltage
between two input pins at 25°C
+ / - 3.5 V
+ / - 5.0 V
+ / - 9.0 V
+ / - 12.5 V
ITA6V5B1
ITA10B1
ITA18B1
ITA25B1
This monolithic Transil Array is based on 6
unidirectionalTransilswith a commoncathode and
can be configurated to offer up to 5 bidirectional
functions. This imposes a maximum differential
voltage between 2 inputpins (see opposite table).
Typical application: RS232 junction.
TX
RX
RTS
CTS
GND
ORDER CODE
ITA 25 B 1 RL
PACKAGING:
RL = Tapeand reel.
= Tube.
INTEGRATED
TRANSIL ARRAY
PACKAGE : SO8 PLASTIC
VBR min
BIDIRECTIONAL
4/5
ITA6V5B1 / ITA10B1 / ITA18B1 /ITA25B1
MARKING
TYPE
MARKING
6V5B1
10B1
ITA6V5B1
ITA10B1
ITA18B1
ITA25B1
18B1
25B1
PACKAGE MECHANICAL DATA
SO8 (Plastic)
DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
a1
a2
b
1.75
0.069
0.010
0.065
0.019
0.010
0.1
0.25 0.004
1.65
0.35
0.19
0.48 0.014
0.25 0.007
b1
C
0.50
0.020
c1
D
45°(typ)
4.8
5.8
5.0 0.189
6.2 0.228
0.197
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0 0.15
1.27 0.016
0.6
0.157
0.050
0.024
L
M
S
°
8 (max)
Packaging: Preferred packagingis tapeand reel.
Weight : 0.08g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-
THOMSON Microelectronics products are not authorized for useas critical components in life support devices or systems withoutexpress writ-
ten approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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