SMP75-8 [STMICROELECTRONICS]
TRISILTM; TRISILTM
| 型号： | SMP75-8 |
| 厂家： | 
ST |
| 描述： | TRISILTM |
| 文件： | 总6页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMP75-8
TM
TRISIL
FEATURES
Bidirectional surge arrestor.
Very low stand-offvoltage : VRM = 8 V.
High repetitive surge capability :
µ
I
PP = 75 A (10/1000 s).
Very low capacitance: C < 75 pF
Low leakage current : < 2 µA
DESCRIPTION
The SMP75-8 is a very low voltage transient surge
arrestor especially designed to protect sensitive
telecommunication equipment against lightning
strikes and other transients.
SMB
(JEDEC DO-214AA)
SCHEMATIC DIAGRAM
MAIN APPLICATION
XDSL TRANSMISSION EQUIPMENT
BENEFITS
Protectionagainst high energy surges.
Very low breakover voltage : VBO < 15 V, thus
avoiding saturationof transformer.
No signal distortion thanks to very low ca-
pacitance.
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
- BELLCORETR-NWT
-000974:
10/1000 µs
1 kV
10/1000 s 75A *
10/700 µs 4 kV
5/310 µs 100A
10/700 µs 4 kV
5/310 µs 100A
1.2/50 µs 4 kV
1/20 µs 100A
µ
- CCITT K20:
- VDE 0433:
- VDE 0878:
* with series resistor or PTC.
January 1998 - Ed : 2
1/6
SMP75-8
ABSOLUTE MAXIMUM RATINGS (Tamb
=
25°C)
Symbol
Parameter
Value
Unit
Ipp
Peak pulse current
10/1000µs
8/20 s
75
250
A
A
µ
Non repetitivesurge peak on-state current
One cycle
ITSM
50Hz
60Hz
35
37
A
A
Non repetitivesurge peak on-state current
F = 50Hz
0.2s
2s
14
6
A
A
TI
Maximum lead temperaturefor soldering during 10s
260
°C
Tstg
Tj
Storage temperaturerange
Maximum junction temperature
- 55 to + 150
150
°C
°C
THERMAL RESISTANCES
Symbol
Parameter
Value
20
Unit
°C/W
°C/W
Rth(j-I)
Rth(j-a)
Junction to leads
Junction to ambient on printed circuit
(with standard footprint dimensions)
100
% I
Note 1:
Pulse waveform
PP
100
µ
µ
µ
10 / 1000 s tr = 10 s tp = 1000 s
8 / 20 µs
5 / 310 µs
1 / 20 µs
tr = 8 µs
tr = 5 µs
tr = 1 µs
tp = 20 µs
tp = 310 µs
tp = 20 µs
50
0
µ
µ
µ
tp = 10 s
2 / 10 s
tr = 2 s
t
t
r
p
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
IRM
VR
Parameter
Stand-offvoltage
Leakage current at stand-offvoltage
ContinuousReverse voltage
Breakdown voltage
Breakovervoltage
VBR
VBO
IH
Holding current
IBO
Breakovercurrent
IPP
Peak pulse current
C
Capacitance
2/6
SMP75-8
STATIC PARAMETERS
Type
IRM @ VRM
max.
IR @ VR
max.
note 1
VBO @ IBO
max.
note 2
IH
C
max.
note 4
typ.
note 3
µA
V
µA
50
V
V
mA
800
mA
pF
SMP75-8
2
6
8
15
50
75
Note 1 : I measured at V guarantees V >V
BR R
Note 2 : Measured at 50Hz, see test circuit 1. In any case V
Note 3 : See functional holding current test circuit 2.
R
R
≥ V
BR
BOmin
Note 4 :
V
=1V bias, V =1V, F=1MHz.
R RMS
DYNAMIC PARAMETERS
Symbol
Test conditions (see note 5)
Type
Max.
Unit
V
Test conditions 1
RISE = 100 V/µs, di/dt< 10 A/µs, IPP = 75 A
V
VBO
SMP75-8
20
Test conditions 2
VRISE = 1 kV/µs, di/dt < 10 A/µs, IPP = 10 A
Note 5 : V
parameters are given by a KeyTek ’System 2’ generator with PN246I module.
BO
See test circuits (3) for V
dynamic parameters.
BO
TEST CIRCUIT 1 FOR IBO and VBO parameters:
= 20ms
tp
Auto
R1
Transformer
220V/2A
static
relay.
140
R2
240
K
V
V
BO
out
D.U.T
I
measure
BO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
Pulse Test duration (tp = 20ms):
- For Bidirectional devices= Switch K is closed
- For Unidirectional devices = Switch K is open.
V
OUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R2 = 240
Ω
.
3/6
SMP75-8
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2: GO-NOGO TEST
R
- V
P
D.U.T.
V
= - 6
V
BAT
Surge generator
Thisis a GO-NOGO testwhich allowsto confirmthe holdingcurrent (IH) levelin a functionaltestcircuit.
TEST PROCEDURE :
- Adjustthe current level at theIH value by short circuiting the D.U.T.
- Firethe D.U.T. with a surge current : Ipp = 10A, 10/1000 µs.
- TheD.U.T. will come back to the OFF-state within a duration of 50 ms max.
TEST CIRCUITS 3 FORVBO DYNAMIC PARAMETERS
Ipp = 75A
100 V / µs,
2 Ω
83 Ω
45 Ω
46 µH
0.36 nF
10 µF
U
66 Ω
470 Ω
KeyTek ’System 2’ generator with PN246I module
Ipp = 10 A
1 kV / µs,
46 µH
26 µH
60 µF
250 Ω
47 Ω
U
12 Ω
KeyTek ’System 2’ generator with PN246I module
4/6
SMP75-8
TYPICAL APPLICATION : T1 / E1 protection
DA108S1
+Vcc
RTIP
5 V
0 V
+Vcc
RX LINE
RRING
TTIP
+Vcc
SMP75-8
SMP75-8
SM6T6V8A
IC
+Vcc
TX LINE
TRING
The above schematic shows a T1 / E1 application
circuit. This type of line protection may be used in
premises equipment or telephone company
equipment on ports directly connected to metallic
plant lines.
additional voltage protection is recommended on
the line input / output pins of the IC. The diode
array DA108S1 connected between +Vcc and
GND is then used to limit the remaining
overvoltagewithin a safe level.
The DA108S1 is especially dedicated to this
application because. Its fast response time and
low forward voltage drop enable it to clamp any
surge before the IC line interface internal
protection fails. Additionally, the low capacitance
(30pF) is required to prevent signal degradation of
the high speed datd.
The DA108S1 is a fully integrated (1 chip) device
and results from the ST ASDTM(Application
Specific Discretes) technology. ASDsTM combine
the functions of several components into a single
monolithic device that is tailored to meet the exact
requirement of a specific application, allowing
higherdensity and improved reliability.
During the lightning surge, the low voltage Trisil
SMP75-8
provides an efficient crowbar protection
on the primary side of the transformer.
The SMP75-8 has a maximum peak pulse current
of 75A (10/1000µs pulse) and a maximum
breakover voltage of 15V. This low voltage
prevents the transformer to be satured when a
surge occurs on the line. Additionally, the low
capacitance (65pF) is required to avoid significant
signaldegradation in the case of high speed digital
pulses.
To protect the IC line interface from the remaining
energy which is coupled through the transformer,
ORDER CODE
SMP
75 - 8
SURFACE MOUNT
TRISIL 75 A
VOLTAGE
5/6
SMP75-8
Non repetitivesurge peak current versus overload
duration.
MARKING
Package
Type
SMP75-8
Marking
ITSM (A)
50
F=50Hz
Tj initial=25°C
SMB
L08
45
40
35
30
25
20
15
10
5
t(s)
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
PACKAGE MECHANICAL DATA
SMB (JEDEC DO-214AA)(Plastic)
E1
DIMENSIONS
Millimeters Inches
REF.
Min. Typ. Max. Min. Typ. Max.
A1 1.90 2.15 2.45 0.075 0.085 0.096
A2 0.05 0.15 0.20 0.002 0.006 0.008
D
b
c
1.95
0.15
2.20 0.077
0.41 0.006
0.087
0.016
E
E
5.10 5.40 5.60 0.201 0.213 0.220
E1 4.05 4.30 4.60 0.159 0.169 0.181
A1
A2
c
D
L
3.30 3.60 3.95 0.130 0.142 0.156
0.75 1.15 1.60 0.030 0.045 0.063
b
L
FOOT PRINT
(in millimeters)
Packaging: tape and reel
Weight : 0.12g
2.3
1.52
2.75
1.52
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorizedfor use as criticalcomponents in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany -Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A.
6/6
相关型号：
SMP8.0A-M3/84A
DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor
VISHAY
SMP8.0A-M3/85A
DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor
VISHAY
©2020 ICPDF网 联系我们和版权申明