STA500_06 [STMICROELECTRONICS]

30V 3.5A QUAD POWER HALF BRIDGE; 30V 3.5A四路电源半桥
STA500_06
型号: STA500_06
厂家: ST    ST
描述:

30V 3.5A QUAD POWER HALF BRIDGE
30V 3.5A四路电源半桥

文件: 总11页 (文件大小:245K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STA500  
30V 3.5A QUAD POWER HALF BRIDGE  
MINIMUM INPUT OUTPUT PULSE WIDTH  
MULTIPOWER BCD TECHNOLOGY  
DISTORTION  
200mRdsON COMPLEMENTARY DMOS  
OUTPUT STAGE  
CMOS COMPATIBLE LOGIC INPUTS  
THERMAL PROTECTION  
THERMAL WARNING OUTPUT  
PowerSO36  
OVERVOLTAGE, UNDERVOLTAGE  
ORDERING NUMBER: STA500  
PROTECTION  
current capability.  
DESCRIPTION  
The device is particulary designed to make the output  
stage of a stereo All-Digital High Efficiency (DDX™)  
amplifier capable to deliver 30 + 30W output power  
STA500 is a monolithic quad half bridge stage in Mul-  
tipower BCD Technology. The device can be used as  
dual bridge or reconfigured, by connecting CONFIG  
pin to Vdd pin, as single bridge with double current  
capability, and as half bridge (Binary mode) with half  
on 8  
figuration or mono 60W on 4  
have threshold proportional to Ibias pin voltage.  
load and 60W on 8  
load in bridge BTL con-  
load. The input pins  
AUDIO APPLICATION CIRCUIT (Dual BTL)  
+VCC  
VCC1A  
15  
17  
16  
C30  
1µF  
C55  
1000µF  
IN1A  
29  
M3  
M2  
M5  
M4  
IN1A  
L18 22µH  
C20  
V
L
23  
24  
+3.3V  
OUT1A  
CONFIG  
PWRDN  
FAULT  
100nF  
OUT1A  
GND1A  
C52  
330pF  
PWRDN  
25  
C99  
100nF  
14  
12  
R98  
6
PROTECTIONS  
R57  
10K  
R59  
10K  
27  
26  
&
C23  
470nF  
8Ω  
LOGIC  
VCC1B  
R63 R100  
C101  
100nF  
TRI-STATE  
20  
6
C58  
100nF  
C31  
1µF  
11  
10  
C21  
100nF  
TH_WAR  
IN1B  
28  
30  
OUT1B  
OUT1B  
GND1B  
TH_WAR  
L19 22µH  
IN1B  
VDD  
VDD  
VSS  
VSS  
21  
22  
33  
34  
13  
7
REGULATORS  
VCC2A  
C32  
1µF  
M17  
M15  
M16  
M14  
C58  
100nF  
C53  
100nF  
L113 22µH  
VCCSIGN  
8
9
35  
OUT2A  
C60  
100nF  
C110  
100nF  
V
CCSIGN  
36  
31  
20  
19  
OUT2A  
GND2A  
C109  
330pF  
C107  
100nF  
6
4
R103  
6
IN2A  
IN2B  
IN2A  
C108  
470nF  
8Ω  
GND-Reg  
VCC2B  
R104  
20  
R102  
6
C106  
100nF  
GND-Clean  
C33  
1µF  
3
2
C111  
100nF  
OUT2B  
OUT2B  
GND2B  
IN2B  
32  
1
L112 22µH  
GNDSUB  
5
D00AU1148B  
Rev. 7  
1/11  
January 2006  
STA500  
PIN FUNCTION  
N°  
1
Pin  
Description  
GND-SUB  
Vcc Sign  
Vcc1A  
Vcc1B  
Vcc2A  
Vcc2B  
GND1A  
GND1B  
GND2A  
GND2B  
OUT1A  
OUT1B  
OUT2A  
OUT2B  
IN1A  
Substrate ground  
35 ; 36  
15  
Signal Positive supply  
Positive Supply  
12  
Positive Supply  
7
Positive Supply  
4
Positive Supply  
14  
Negative Supply  
13  
Negative Supply  
6
Negative Supply  
5
Negative Supply  
16 ; 17  
10 ; 11  
8 ; 9  
2 ; 3  
29  
Output half bridge 1A  
Output half bridge 1B  
Output half bridge 2A  
Output half bridge 2B  
Input of half bridge 1A  
Input of half bridge 1B  
Input of half bridge 2A  
Input of half bridge 2B  
5V Regulator referred to ground  
5V Regulator referred to +Vcc  
Stand-by pin (Control input)  
30  
IN1B  
31  
IN2A  
32  
IN2B  
21 ; 22  
33 ; 34  
25  
Vdd  
Vss  
PWRDN  
26  
TRI-STATE Hi-Z pin (Control input)  
27  
FAULT  
CONFIG  
TH-WAR  
Fault pin advisor (Open Collector Output)  
24  
Configuration setting pin  
Thermal warning advisor (Open Collector Output)  
28  
19  
GND-clean Logical ground  
23  
IBIAS  
NC  
High logical state setting voltage  
18  
Not connected  
20  
GND-Reg  
Ground for Vdd regulator  
2/11  
STA500  
FUNCTIONAL PIN STATUS  
PIN NAME  
Logical value  
IC -STATUS  
FAULT  
0
Fault detected (Short circuit, or  
Thermal ..)  
FAULT (*)  
TRI-STATE  
TRI-STATE  
PWRDN  
1
Normal Operation  
0
1
0
1
0
1
All powers in Hi-Z state  
Normal operation  
Low absorpion  
PWRDN  
Normal operation  
THWAR  
Temperature of the IC =130°C  
Normal operation  
THWAR(*)  
CONFIG  
0
1
Normal Operation  
CONFIG(**)  
OUT1A=OUT1B ; OUT2A=OUT2B  
(IF IN1A = IN1B; IN2A = IN2B)  
(*) : The pin is open collector. To have the high logic value, it needs to be pulled up by a resistor.  
(**:) To put CONFIG = 1 means connect Pin 24 (CONFIG) to Pins 21, 22 (Vdd)  
PIN CONNECTION  
1
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
GND-SUB  
OUT2B  
OUT2B  
VCC2B  
VCCSign  
2
VCCSign  
VSS  
3
4
VSS  
5
GND2B  
GND2A  
IN2B  
6
IN2A  
7
VCC2A  
IN1B  
8
OUT2A  
OUT2A  
OUT1B  
OUT1B  
IN1A  
9
TH_WAR  
FAULT  
TRI-STATE  
PWRDN  
CONFIG  
IBIAS  
10  
11  
12  
13  
14  
15  
16  
17  
18  
VCC1B  
GND1B  
GND1A  
VCC1A  
V
V
DD  
OUT1A  
OUT1A  
N.C.  
DD  
GND-Reg  
GND-Clean  
D00AU1133  
3/11  
STA500  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
40  
Unit  
V
VCE  
Vmax  
Top  
DC Supply Voltage (Pin 4,7,12,15)  
Maximum Voltage on pins (23 to 32)  
Operating Temperature Range  
5.5  
V
0 to 70  
-40 to 150  
°C  
°C  
Tstg, Tj  
Storage and Junction Temperature  
THERMAL DATA  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
°C/W  
°C  
Tj-case Thermal Resistance Junction to Case (thermal pad)  
2.5  
TjSD  
Twarn  
thSD  
Thermal shut-down junction temperature  
Thermal warning temperature  
150  
130  
25  
°C  
Thermal shut-down hysteresis  
°C  
ELECTRICAL CHARACTERISTCS  
(Ibias = 3.3V; Vcc = 28V; T = 25°C unless otherwise specified)  
amb  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
RdsON Power Pchannel/Nchannel  
MOSFET RdsON  
Id=1A;  
200  
270  
m  
Idss  
Power Pchannel/Nchannel  
leakage Idss  
Vcc=35V  
Id=1A  
50  
µA  
gN  
Power Pchannel RdsON  
Matching (*)  
95  
95  
%
gP  
Power Nchannel RdsON  
Matching (*)  
Id=1A  
%
Dt_s  
Dt_d  
Low current Dead Time (static)  
see test circuit no.1; see fig. 1  
10  
20  
50  
ns  
ns  
High current Dead Time (dinamic) L=22µH; C = 470nF; Rl = 8Ω  
Id = 3.5A; see fig. 3  
td ON  
td OFF  
tr  
Turn-on delay time  
Turn-off delay time  
Rise time  
Resistive load  
100  
100  
25  
ns  
ns  
ns  
ns  
V
Resistive load  
Resistive load; as fig. 1  
Resistive load; as fig. 1  
tf  
Fall time  
25  
VCC  
VIN-H  
Supply voltage operating voltage  
High level input voltage  
9
VOV  
Ibias/2  
+300mV  
V
VIN-L  
Low level input voltage  
Ibias/2  
-300mV  
V
IIN-H  
IIN-L  
Hi level Input current  
Low level input current  
Pin voltage=Ibias  
Pin voltage = 0.3V  
1
1
µA  
µA  
µA  
V
I
Hi level PWRDN pin input current Ibias = 3.3V  
35  
PWRDN-H  
VL  
Low logical state voltage VL (pin  
PWRDN, TRISTATE) (note 1)  
Ibias = 3.3V  
0.8  
VH  
High logical state voltage VH (pin Ibias = 3.3V  
PWRDN, TRISTATE) (note 1)  
1.7  
V
4/11  
STA500  
ELECTRICAL CHARACTERISTCS (continued)  
(Ibias = 3.3V; Vcc = 28V; T = 25°C unless otherwise specified)  
amb  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
IVCC-  
PWRDN  
Supply current from Vcc in Power PWRDN = 0  
Down  
3
mA  
IFAULT  
Output Current pins  
FAULT -TH-WARN when  
FAULT CONDITIONS  
Vpin = 3.3V  
Tri-state=0  
1
mA  
mA  
IVCC-hiz Supply current from Vcc in Tri-  
state  
22  
IVCC  
Supply current from Vcc in  
operation  
(both channel switching)  
Input pulse width = 50% Duty;  
Switching Frequency = 384Khz;  
No LC filters;  
80  
6
mA  
A
IOUT-SH Overcurrent Protection Threshold  
(short circuit current limit) (note 2)  
3.5  
30  
8
VOV  
VUV  
Overvoltage protection threshold  
Undervoltage protection threshold  
35  
7
40  
V
V
tpw_min Output minimum pulse width  
No Load  
70  
150  
ns  
Notes: 1. The following table explains the VL, VH variation with Ibias  
Ibias  
2.7  
3.3  
5
VLmax  
0.7  
VHmin  
1.5  
Unit  
V
0.8  
1.7  
V
0.85  
1.85  
V
Note 2: If used in single BTL configuration, the device may be not short circuit protected  
LOGIC TRUTH TABLE (see fig. 2)  
OUTPUT  
MODE  
TRI-STATE  
INxA  
INxB  
Q1  
Q2  
Q3  
Q4  
0
1
1
1
1
X
0
0
1
1
X
0
1
0
1
OFF  
OFF  
OFF  
ON  
OFF  
OFF  
ON  
OFF  
ON  
OFF  
ON  
Hi-Z  
DUMP  
ON  
OFF  
ON  
NEGATIVE  
POSITIVE  
Not used  
OFF  
ON  
OFF  
OFF  
ON  
OFF  
5/11  
STA500  
Figure 1. Test Circuit.  
OUTxY  
Vcc  
(3/4)Vcc  
Low current dead time = MAX(DTr,DTf)  
(1/2)Vcc  
(1/4)Vcc  
+Vcc  
t
DTr  
DTf  
Duty cycle = 50%  
M58  
M57  
OUTxY  
R 8  
INxY  
+
-
V67 =  
vdc = Vcc/2  
gnd  
D03AU1458  
Figure 2.  
+VCC  
Q1  
Q2  
OUTxA  
OUTxB  
INxA  
INxB  
Q3  
Q4  
GND  
D00AU1134  
Figure 3.  
High Current Dead time for Bridge application = ABS(DTout(A)-DTin(A))+ABS(DTOUT(B)-DTin(B))  
+VCC  
Duty cycle=A  
Duty cycle=B  
DTout(A)  
M58  
M57  
M64  
M63  
Q1  
OUTxA  
Iout=3.5A  
Q2  
Q4  
DTin(A)  
DTout(B)  
DTin(B)  
INxB  
Rload=8  
OUTxB  
INxA  
L67 22µ  
L68 22µ  
Iout=3.5A  
Q3  
C69  
470nF  
C70  
470nF  
C71 470nF  
Duty cycle A and B: Fixed to have DC output current of 3.5A in the direction shown in figure  
D00AU1162  
6/11  
STA500  
Figure 4. Typical Quad Half Bridge Configuration  
+VCC  
VCC1P  
15  
17  
16  
C21  
2200µF  
IN1A  
29  
M3  
M2  
M5  
M4  
R61  
5K  
IN1A  
C31 820µF  
L11 22µH  
IBIAS  
23  
24  
+3.3V  
OUTPL  
C71  
100nF  
CONFIG  
R41  
20  
C91  
1µF  
OUTPL  
PWRDN  
PWRDN  
FAULT  
25  
C81  
100nF  
14  
12  
PGND1P  
R51  
6
R62  
5K  
C41  
330pF  
PROTECTIONS  
R57  
10K  
R59  
10K  
27  
26  
&
LOGIC  
VCC1N  
TRI-STATE  
C58  
100nF  
C51  
1µF  
C61  
100nF  
11  
10  
R63  
5K  
TH_WAR  
IN1B  
28  
30  
OUTNL  
OUTNL  
PGND1N  
C32 820µF  
L12 22µH  
TH_WAR  
C72  
100nF  
R42  
20  
IN1B  
C92  
1µF  
VDD  
VDD  
VSS  
VSS  
21  
22  
33  
34  
13  
7
C82  
100nF  
R52  
6
R64  
5K  
C42  
330pF  
REGULATORS  
VCC2P  
M17  
M15  
M16  
M14  
R65  
5K  
C58  
100nF  
C53  
100nF  
C33 820µF  
L13 22µH  
VCCSIGN  
VCCSIGN  
8
9
35  
OUTPR  
C60  
100nF  
C73  
100nF  
R43  
20  
C93  
1µF  
36  
31  
20  
19  
OUTPR  
C83  
100nF  
6
4
PGND2P  
R53  
6
R66  
5K  
IN2A  
IN2B  
C43  
330pF  
IN2A  
GND-Reg  
VCC2N  
GND-Clean  
C52  
1µF  
C62  
100nF  
3
2
R67  
5K  
OUTNR  
OUTNR  
PGND2N  
C34 820µF  
L14 22µH  
IN2B  
32  
1
C74  
100nF  
R44  
20  
GNDSUB  
C94  
1µF  
5
C84  
100nF  
R54  
6
R68  
5K  
C44  
330pF  
D03AU1474  
Note:  
The diagran showed below, have been obtained using the demonstration board described in the application  
Note AN1456 (STA304 + STA500 Digital Audioprocessor evolution board evaluating manual - Jan 2002), refer  
to the schematic shown in fig. 1).  
For the Quad Half Bridge Configuration (fig. 4), refers to the application note AN1661 (STA308 Half Bridge  
Board - March 2003)  
7/11  
STA500  
Figure 5. Distortion vs Output Power  
(STA304A+STA500)  
Figure 7. Output Power vs Supply Voltage  
(STA304A+STA500)  
50  
10  
Pout (W)  
45  
5
40  
Vcc=30V  
STA500  
4 ohm load  
filter 22uH+ 0.47uF diff+  
0.1uF common mode  
Rl=80hm  
f=1KHz  
2
35  
THD = 10%  
1
30  
0.5  
25  
%
20  
0.2  
THD = 1%  
15  
0.1  
10  
5
0.05  
.
Eq  
0.02  
0.01  
0
+12  
+12.5  
+13  
+13.5  
+14  
+14.5  
+15  
Vdc  
+15.5  
+16  
+16.5  
+17  
+17.5 +18  
700m  
1
2
3
4
5
6
7
8
9
10  
20  
30  
40 50  
Vsupply (V)  
W
Figure 8. Output Power vs Supply Voltage  
(STA304A+STA500)  
Figure 6. Tolal Power Dissipation & Efficiency  
vs Output Power  
50  
Pout (W)  
90  
80  
70  
60  
50  
40  
30  
20  
7
6
5
4
3
2
1
0
45  
40  
Rload = 8 ohm  
Pdiss  
f = 1KHz  
THD = 10%  
35  
30  
25  
STA304A+STA500  
1channel  
Vcc=25V  
Rl=8ohm  
F=1KHz  
THD = 1%  
20  
Efficiency  
15  
10  
0
5
10  
15  
20  
25  
30  
5
+12 +13 +14 +15 +16 +17 +18 +19 +20 +21 +22 +23 +24 +25 +26 +27 +28  
Pout (W)  
Vcc (V)  
8/11  
STA500  
mm  
inch  
DIM.  
MIN.  
TYP. MAX. MIN.  
3.60  
TYP. MAX.  
0.1417  
0.0118  
0.1299  
0.0039  
0.0150  
0.0126  
0.6299  
0.3858  
0.5709  
0.4370  
0.1142  
0.2441  
0.0256  
0.4350  
0.0039  
0.6260  
0.0433  
0.0433  
OUTLINE AND  
MECHANICAL DATA  
A
a1  
a2  
a3  
b
0.10  
0.30 0.0039  
3.30  
0
0.10  
0.22  
0.23  
15.80  
9.40  
13.90  
10.90  
0.38 0.0087  
0.32 0.0091  
16.00 0.6220  
9.80 0.3701  
14.5 0.5472  
11.10 0.4291  
2.90  
c
D
D1  
E
E1  
E2  
E3  
e
5.80  
6.20 0.2283  
0.65  
e3  
G
11.05  
0
0.10  
H
15.50  
15.90 0.6102  
1.10  
h
L
0.8  
1.10 0.0315  
10˚ (max)  
8˚ (max)  
N
s
PowerSO-36  
Note: “D and E1” do not include mold flash or protusions.  
- Mold flash or protusions shall not exceed 0.15mm (0.006”)  
- Critical dimensions are "a3", "E" and "G".  
0096119 C  
9/11  
STA500  
Table 1. Revision History  
Date  
Revision  
Description of Changes  
July 2003  
6
7
First Issue  
January 2006  
Modified in the Electrical Characteristics table (page 4) the values of  
IN-H, VIN-L, VL & VH parameters.  
Modified the notes 1( page 5).  
V
10/11  
STA500  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2006 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
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www.st.com  
11/11  

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