STB12NM60N [STMICROELECTRONICS]
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET; N沟道600V - 0.35ヘ - 10A - D2 / I2PAK - TO- 220 / FP - TO- 247第二代MDmesh⑩功率MOSFET
| 型号： | STB12NM60N |
| 厂家： | 
ST |
| 描述： | N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET |
| 文件： | 总18页 (文件大小：592K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB12NM60N/-1 - STF12NM60N
STP12NM60N - STW12NM60N
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247
Second generation MDmesh™ Power MOSFET
Features
VDSS
(@Tjmax)
Type
RDS(on)
ID
3
3
2
1
1
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
650V
650V
650V
650V
650V
< 0.41Ω
< 0.41Ω
< 0.41Ω
< 0.41Ω
< 0.41Ω
10A
10A
10A(1)
D²PAK
I²PAK
10A
TO-247
10A
3
3
2
2
1
1
1. Limited only by maximum temperature allowed
TO-220FP
TO-220
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Internal schematic diagram
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Application
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
B12NM60N
B12NM60N
F12NM60N
P12NM60N
W12NM60N
D²PAK
I²PAK
Tape & reel
Tube
TO-220FP
TO-220
TO-247
Tube
Tube
Tube
April 2007
Rev 2
1/18
www.st.com
18
Contents
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Value
D²PAK/I²PAK
Parameter
Unit
TO-220FP
TO-220/TO-247
VDS
VGS
ID
Drain-source voltage (VGS=0)
600
V
V
Gate-source voltage
25
10 (1)
A
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
10
6.3 (1)
A
ID
6.3
(2)
40 (1)
A
Drain current (pulsed)
40
90
15
IDM
PTOT
Total dissipation at TC = 25°C
Peak diode recovery voltage slope
25
W
dv/dt (3)
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
VISO
--
2500
V
Tj
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Table 2.
Symbol
Thermal data
D²PAK/I²PAK
TO-220/TO-247
Parameter
TO-220FP Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
1.38
62.5
5
°C/W
°C/W
Maximum lead temperature for soldering
Tl
300
°C
purpose
Table 3.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAS
3.5
A
Single pulse avalanche energy
EAS
200
mJ
(starting Tj=25°C, ID=IAS, VDD= 50V)
3/18
Electrical characteristics
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
dv/dt(1)
IDSS
ID = 1mA, VGS= 0
600
V
V
DD = 400V,ID = 10A,
GS = 10V
Drain-source voltage slope
41
V/ns
V
VDS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,@125°C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20V
100
nA
VGS(th)
RDS(on)
VDS= VGS, ID = 250µA
VGS= 10V, ID= 5A
Gate threshold voltage
2
3
4
V
Static drain-source on
resistance
0.35
0.41
Ω
1. Characteristics value at turn off on inductive load
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
VDS =15V, ID= 5A
gfs
Forward transconductance
8
S
Input capacitance
Ciss
Coss
Crss
960
65
7
pF
pF
pF
VDS = 50V, f =1MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
VGS = 0, VDS = 0V to 480V
Coss eq.
180
5
pF
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
Rg
Gate input resistance
Ω
VDD = 480V, ID = 10A
VGS = 10V
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
30.5
5
nC
nC
nC
16
(see Figure 18)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical characteristics
Min Typ Max Unit
Table 6.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
15
9
ns
ns
ns
ns
VDD = 300V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Turn-off delay time
Fall time
60
10
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD
Source-drain current
10
40
A
A
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 10A, VGS=0
1.3
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
360
3.5
20
ns
µC
A
ISD =10A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
Qrr
(see Figure 19)
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
530
5.20
20
ns
µC
A
VDD = 100V
Qrr
di/dt =100A/µs, ISD = 10A
Tj = 150°C (see Figure 19)
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/18
Electrical characteristics
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220 /
D²PAK / I²PAK
Figure 2.
Figure 4.
Figure 6.
Thermal impedance for TO-220 /
D²PAK / I²PAK
Figure 3.
Figure 5.
6/18
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Safe operating area for TO-247
Thermal impedance for TO-247
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical characteristics
Figure 7.
Output characteristics
Figure 8.
Transfer characteristics
Figure 9.
Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs. gate-source
voltage
Figure 12. Capacitance variations
7/18
Electrical characteristics
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Figure 13. Normalized gate threshold voltage Figure 14. Normalized on resistance vs.
vs. temperature
temperature
Figure 15. Source-drain diode forward
characteristics
Figure 16. Normalized BV
vs. temperature
DSS
8/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Test circuit
3
Test circuit
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped Inductive load test
circuit
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
9/18
Package mechanical data
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/18
Package mechanical data
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Package mechanical data
2
TO-262 (I PAK) MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
TYP.
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
13/18
Package mechanical data
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
1
14/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Package mechanical data
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.85
2.20
1.0
TYP
MAX.
5.15
MIN.
0.19
TYP.
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
15/18
Packaging mechanical data
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
16/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Revision history
6
Revision history
Table 8.
Date
Revision history
Revision
Changes
26-Mar-2007
23-Apr-2007
1
2
First release
Complete version
17/18
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
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18/18
相关型号：
STB12NM60N-1
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
STMICROELECTR
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