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STB75NF75L-1 [STMICROELECTRONICS]

N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET; N沟道75V - 0.009欧姆 - 75A D2PAK / I2PAK / TO- 220 STripFET⑩ II功率MOSFET
STB75NF75L-1
型号： STB75NF75L-1
厂家： ST    ST
描述：

N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET
N沟道75V - 0.009欧姆 - 75A D2PAK / I2PAK / TO- 220 STripFET⑩ II功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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STP75NF75L  
STB75NF75L STB75NF75L-1  
2
2
N-CHANNEL 75V - 0.009 Ω - 75A D PAK/I PAK/TO-220  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB75NF75L/-1  
STP75NF75L  
75 V  
75 V  
<0.011 Ω  
<0.011 Ω  
75 A  
75 A  
■
■
■
■
TYPICAL R (on) = 0.009Ω  
DS  
3
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW THRESHOLD DRIVE  
3
1
2
1
2
I PAK  
2
D PAK  
TO-263  
TO-262  
DESCRIPTION  
This MOSFET series realized with STMicroelectronics  
unique STripFET process has specifically been designed  
to minimize input capacitance and gate charge. It is  
therefore suitable as primary switch in advanced high-  
efficiency, high-frequency isolated DC-DC converters for  
Telecom and Computer applications. It is also intended  
for any applications with low gate drive requirements.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
■
■
■
SOLENOID AND RELAY DRIVERS  
DC MOTOR CONTROL  
DC-DC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
75  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
75  
V
DGR  
GS  
V
Gate- source Voltage  
± 15  
75  
V
GS  
I (•)  
D
Drain Current (continuous) at T = 25°C  
A
C
I
D
Drain Current (continuous) at T = 100°C  
70  
A
C
I
(••)  
Drain Current (pulsed)  
300  
300  
2
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
20  
dv/dt  
(2)  
E
680  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(1) I ≤ 75A, di/dt ≤ 500A/µs, V ≤ V  
, T ≤ T  
j JMAX.  
(•) Current limited by package  
(••) Pulse width limited by safe operating area.  
SD  
DD  
(BR)DSS  
o
(2) Starting T = 25 C, I = 37.5A, V = 30V  
j
D
DD  
April 2002  
1/11  
.
STB75NF75L/-1 STP75NF75L  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
Max  
Max  
Typ  
0.5  
62.5  
300  
°C/W  
°C/W  
°C  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
= 250 µA = 0  
Min.  
Typ.  
Max.  
Unit  
I
V
GS  
75  
V
V
D
(BR)DSS  
Breakdown Voltage  
V
V
= Max Rating  
= Max Rating T = 125°C  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DS  
DSS  
Drain Current (V = 0)  
GS  
DS  
C
Gate-body Leakage  
V
GS  
= ± 15 V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
GS(th)  
V
= V  
I = 250 µA  
D
Gate Threshold Voltage  
1
2.5  
V
DS  
GS  
V
V
= 10 V  
= 5 V  
I
I
= 37.5 A  
= 37.5 A  
Static Drain-source On  
Resistance  
0.009  
0.010  
0.011  
0.013  
Ω
Ω
R
GS  
D
D
DS(on)  
GS  
DYNAMIC  
Symbol  
(*)  
Parameter  
Test Conditions  
15 V = 37.5 A  
Min.  
Typ.  
Max.  
Unit  
Forward Transconductance  
120  
S
g
fs  
V
V
I
D
DS =  
= 25V, f = 1 MHz, V = 0  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
4300  
660  
205  
pF  
pF  
pF  
DS  
GS  
iss  
C
oss  
C
rss  
2/11  
STB75NF75L/-1 STP75NF75L  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
R
= 40 V  
= 4.7 Ω  
I = 37.5 A  
Turn-on Delay Time  
Rise Time  
35  
150  
ns  
ns  
t
DD  
D
d(on)  
V
= 4.5 V  
t
r
G
GS  
(Resistive Load, Figure 3)  
Q
V
= 60V I = 75 A V = 5V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
75  
18  
31  
90  
nC  
nC  
nC  
g
DD  
Q
gs  
Q
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 40 V  
I = 37.5 A  
D
Turn-off Delay Time  
Fall Time  
110  
60  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 4.5 V  
GS  
t
G
f
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
75  
300  
A
A
SD  
(•)  
I
SDM  
(*)  
I
I
= 75 A  
V
= 0  
GS  
V
Forward On Voltage  
1.3  
V
SD  
SD  
SD  
t
rr  
= 75 A  
= 20 V  
di/dt = 100A/µs  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
100  
380  
7.5  
ns  
nC  
A
Q
V
T = 150°C  
j
rr  
DD  
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedance  
3/11  
STB75NF75L/-1 STP75NF75L  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/11  
STB75NF75L/-1 STP75NF75L  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage vs Temperature.  
.
.
5/11  
STB75NF75L/-1 STP75NF75L  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/11  
STB75NF75L/-1 STP75NF75L  
2
D PAK MECHANICAL DATA  
mm.  
inch.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.028  
0.045  
0.018  
0.048  
0.352  
TYP.  
TYP.  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
8.5  
4.88  
15  
10.4  
0.394  
0.409  
E1  
G
5.28  
15.85  
1.4  
0.192  
0.591  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.069  
0.126  
L
L2  
L3  
M
1.27  
1.4  
2.4  
1.75  
3.2  
R
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
7/11  
STB75NF75L/-1 STP75NF75L  
TO-262 (I2PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.048  
0.352  
0.094  
0.393  
0.515  
0.137  
0.050  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.106  
0.409  
0.531  
0.149  
0.055  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
2.4  
0.6  
C2  
D
1.36  
9.35  
2.7  
e
E
10  
10.4  
13.6  
3.78  
1.4  
L
13.1  
3.48  
1.27  
L1  
L2  
L1  
L2  
D
L
P011P5/E  
8/11  
STB75NF75L/-1 STP75NF75L  
TO-220 MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
TYP.  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
9/11  
STB75NF75L/-1 STP75NF75L  
D2PAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
inch  
MAX.  
DIM.  
MIN.  
MAX.  
MIN.  
A
B
C
D
G
N
T
330  
12.992  
0.520  
1.039  
1.197  
1.5  
12.8  
20.2  
24.4  
100  
0.059  
0.504  
0.795  
0.960  
3.937  
13.2  
26.4  
30.4  
BASE QTY  
BULK QTY  
1000  
1000  
TAPE MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
10.5  
15.7  
1.5  
MAX.  
10.7  
15.9  
1.6  
MIN.  
0.413  
0.618  
0.059  
0.062  
0.065  
0.449  
0.189  
0.153  
0.468  
0075  
MAX.  
0.421  
0.626  
0.063  
0.063  
0.073  
0.456  
0.197  
0.161  
0.476  
0.082  
A0  
B0  
D
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
50  
1.574  
T
0.25  
23.7  
0.35  
24.3  
.0.0098 0.0137  
0.933 0.956  
W
* on sales type  
10/11  
STB75NF75L/-1 STP75NF75L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
11/11  

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