STD7NB20 [STMICROELECTRONICS]
N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH⑩ MOSFET; N沟道200V - 0.3ohm - 7A的DPAK / IPAK PowerMESH⑩ MOSFET
| 型号： | STD7NB20 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH⑩ MOSFET |
| 文件： | 总10页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD7NB20
STD7NB20-1
N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK
PowerMESH™ MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STD7NB20
STD7NB20-1
200 V
200 V
< 0.40 Ω
< 0.40 Ω
7 A
7 A
3
■
■
■
■
■
■
TYPICAL R (on) = 0.3 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
2
1
1
DPAK
TO-252
IPAK
TO-251
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R
per area,
DS(on)
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
■
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
DS
Drain-source Voltage (V = 0)
200
GS
V
Drain-gate Voltage (R = 20 kΩ)
200
V
DGR
GS
V
GS
Gate- source Voltage
± 30
V
I
Drain Current (continuos) at T = 25°C
7
A
D
C
I
Drain Current (continuos) at T = 100°C
5
28
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
55
W
C
Derating Factor
0.44
W/°C
V/ns
°C
dv/dt (1)
Peak Diode Recovery voltage slope
Storage Temperature
5.5
T
stg
– 65 to 150
T
Max. Operating Junction Temperature
150
°C
j
(1) I ≤ 7A, di/dt≤200 A/µs, V ≤ V
, Tj≤T
(BR)DSS jMAX
SD
DD
(•)Pulse width limited by safe operating area
July 2002
1/10
STD7NB20 / STD7NB20-1
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
2.27
100
275
°C/W
°C/W
°C
Rthj-amb
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
7
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
100
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
200
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ± 30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
3
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 3.5 A
0.30
0.40
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
2
3
S
I
D
= 3.5 A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
470
135
22
650
190
30
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
2/10
STD7NB20 / STD7NB20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 100 V, I = 5 A
Turn-on Delay Time
10
14
ns
d(on)
DD
D
= 4.7Ω V = 10 V
G
GS
t
Rise Time
15
20
24
ns
r
(see test circuit, Figure 3)
Q
V
V
= 160V, I = 10 A,
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
17
7.5
5.5
nC
nC
nC
g
DD
D
= 10V
GS
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
R
= 160V, I = 10 A,
8
10
20
ns
ns
ns
11
14
28
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
GS
(see test circuit, Figure 3)
G
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
7
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
28
A
SDM
V
I
I
= 7 A, V = 0
1.5
V
SD
SD
GS
t
rr
= 10 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
170
980
11.5
ns
nC
A
SD
V
= 50V, T = 150°C
j
DD
Q
rr
(see test circuit, Figure 5)
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/10
STD7NB20 / STD7NB20-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STD7NB20 / STD7NB20-1
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
STD7NB20 / STD7NB20-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD7NB20 / STD7NB20-1
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
7/10
1
STD7NB20 / STD7NB20-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
2.2
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
8/10
STD7NB20 / STD7NB20-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
9/10
STD7NB20 / STD7NB20-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
10/10
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