STD7NM50N-1 [STMICROELECTRONICS]
N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET; N沟道500V - 0.70ヘ - 5A - TO- 220 - TO- 220FP - IPAK - DPAK第二代MDmesh⑩功率MOSFET型号: | STD7NM50N-1 |
厂家: | ST |
描述: | N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET |
文件: | 总17页 (文件大小:422K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STD7NM50N - STD7NM50N-1
STF7NM50N - STP7NM50N
N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK
Second generation MDmesh™ Power MOSFET
Features
VDSS
(@Tjmax)
Type
RDS(on)
ID
3
2
1
3
STD7NM50N
STD7NM50N-1
STF7NM50N
STP7NM50N
550V
550V
550V
550V
<0.78Ω
<0.78Ω
<0.78Ω
<0.78Ω
5A
5A
5A (1)
2
IPAK
1
TO-220
5A
3
1. Limited only by maximum temperature allowed
3
1
2
1
■ 100% avalanche tested
DPAK
TO-220FP
■ Low input capacitance and gate charge
■ Low gate input resistance
Internal schematic diagram
Description
This device is realized with the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
Application
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STD7NM50N-1
STD7NM50N
STF7NM50N
STP7NM50N
D7NM50N
D7NM50N
F7NM50N
P7NM50N
IPAK
DPAK
Tube
Tape & reel
Tube
TO-220FP
TO-220
Tube
April 2007
Rev 1
1/17
www.st.com
17
Contents
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Value
TO-220 / DPAK
Symbol
Parameter
Unit
TO-220FP
IPAK
VDS
VGS
ID
Drain-source voltage (VGS=0)
500
25
V
V
A
A
Gate-source voltage
5 (1)
3 (1)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
5
3
ID
(2)
20 (1)
20
Drain current (pulsed)
20
45
A
W
IDM
PTOT
Total dissipation at TC = 25°C
Peak diode recovery voltage slope
dv/dt (3)
15
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;TC=25°C)
VISO
--
2500
V
Tj
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤5A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Table 2.
Thermal data
Max value
Symbol
Parameter
Unit
TO-220 / DPAK
IPAK
TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
2.78
6.25
°C/W
°C/W
62.5
300
Maximum lead temperature for soldering
Tl
°C
purpose
Table 3.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
IAS
2
A
Single pulse avalanche energy
EAS
100
mJ
(starting Tj=25°C, ID=IAS, VDD= 50V)
3/17
Electrical characteristics
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
On/off states
Parameter
Symbol
Test conditions
ID = 1mA, VGS= 0
Min Typ Max Unit
Drain-source breakdown
voltage
V(BR)DSS
500
V
Vdd = 400V, Id = 5A,
Vgs = 10V
dv/dt(1)
Drain-source voltage slope
40
V/ns
V
DS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating,Tc = 125°C
100
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20V
100
4
nA
VGS(th)
RDS(on)
VDS= VGS, ID = 250µA
VGS= 10V, ID=2.5A
Gate threshold voltage
2
3
V
Static drain-source on
resistance
0.70 0.78
Ω
1. Characteristics value at turn off on inductive load
Table 5.
Dynamic
Parameter
Symbol
Test conditions
Min. Typ. Max. Unit
(1)
VDS =15V, ID= 2.5A
Forward transconductance
4
S
gfs
Input capacitance
Ciss
Coss
Crss
400
35
4
pF
pF
pF
Output capacitance
VDS = 50V, f =1 MHz, VGS = 0
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
Coss eq.
VGS = 0V, VDS = 0V to 400V
67
6
pF
f=1MHz Gate DC Bias=0
Test signal level=20mV
Open drain
Rg
Gate input resistance
Ω
Qg
Qgs
Qgd
VDD = 400V, ID = 5A
Total gate charge
Gate-source charge
Gate-drain charge
12
2
nC
nC
nC
VGS = 10V
6
(see Figure 16)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
7
5
ns
ns
ns
ns
VDD = 250V, ID = 2.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 15)
Turn-off delay time
Fall time
40
9
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max Unit
ISD
Source-drain current
5
A
A
(1)
Source-drain current (pulsed)
20
ISDM
(2)
ISD = 5A, VGS = 0
Forward on voltage
1.3
V
VSD
trr
ISD =5A, di/dt =100A/µs,
VDD=100V, Tj=25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
250
2
ns
µC
A
Qrr
13
(see Figure 17)
IRRM
trr
ISD =5A, di/dt =100A/µs,
VDD=100V, Tj=150°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
330
2
ns
µC
A
Qrr
13
(see Figure 17)
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/17
Electrical characteristics
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220 /
DPAK / IPAK
Figure 2.
Figure 4.
Figure 6.
Thermal impedance for TO-220 /
DPAK / IPAK
Figure 3.
Figure 5.
6/17
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Output characteristics
Transfer characteristics
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Electrical characteristics
Figure 7.
Transconductance
Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs. gate-source
voltage
Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs.
vs. temperature temperature
7/17
Electrical characteristics
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Figure 13. Source-drain diode forward
characteristics
Figure 14. Normalized BV
vs. temperature
DSS
8/17
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Test circuit
3
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped Inductive load test
circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
9/17
Package mechanical data
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/17
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/17
Package mechanical data
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
12/17
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
TYP.
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
13/17
Package mechanical data
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
DPAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
MIN.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
14/17
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
15/17
Revision history
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
6
Revision history
Table 8.
Date
10-Apr-2007
Revision history
Revision
Changes
1
First release
16/17
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
17/17
相关型号:
STD7NM60N
N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
STMICROELECTR
STD7NM80
N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET
STMICROELECTR
STD7NM80-1
N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明