STD7NM50N-1 [STMICROELECTRONICS]

N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET; N沟道500V - 0.70ヘ - 5A - TO- 220 - TO- 220FP - IPAK - DPAK第二代MDmesh⑩功率MOSFET
STD7NM50N-1
型号: STD7NM50N-1
厂家: ST    ST
描述:

N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
N沟道500V - 0.70ヘ - 5A - TO- 220 - TO- 220FP - IPAK - DPAK第二代MDmesh⑩功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件: 总17页 (文件大小:422K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STD7NM50N - STD7NM50N-1  
STF7NM50N - STP7NM50N  
N-channel 500V - 0.70- 5A - TO-220 - TO-220FP - IPAK - DPAK  
Second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax)  
Type  
RDS(on)  
ID  
3
2
1
3
STD7NM50N  
STD7NM50N-1  
STF7NM50N  
STP7NM50N  
550V  
550V  
550V  
550V  
<0.78Ω  
<0.78Ω  
<0.78Ω  
<0.78Ω  
5A  
5A  
5A (1)  
2
IPAK  
1
TO-220  
5A  
3
1. Limited only by maximum temperature allowed  
3
1
2
1
100% avalanche tested  
DPAK  
TO-220FP  
Low input capacitance and gate charge  
Low gate input resistance  
Internal schematic diagram  
Description  
This device is realized with the second generation  
of MDmesh™ technology. This revolutionary  
Power MOSFET associates a new vertical  
structure to the company’s strip layout to yield one  
of the world’s lowest on-resistance and gate  
charge. It is therefore suitable for the most  
demanding high efficiency converters  
Application  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STD7NM50N-1  
STD7NM50N  
STF7NM50N  
STP7NM50N  
D7NM50N  
D7NM50N  
F7NM50N  
P7NM50N  
IPAK  
DPAK  
Tube  
Tape & reel  
Tube  
TO-220FP  
TO-220  
Tube  
April 2007  
Rev 1  
1/17  
www.st.com  
17  
Contents  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
2/17  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Electrical ratings  
1
Electrical ratings  
Table 1.  
Absolute maximum ratings  
Value  
TO-220 / DPAK  
Symbol  
Parameter  
Unit  
TO-220FP  
IPAK  
VDS  
VGS  
ID  
Drain-source voltage (VGS=0)  
500  
25  
V
V
A
A
Gate-source voltage  
5 (1)  
3 (1)  
Drain current (continuous) at TC = 25°C  
Drain current (continuous) at TC = 100°C  
5
3
ID  
(2)  
20 (1)  
20  
Drain current (pulsed)  
20  
45  
A
W
IDM  
PTOT  
Total dissipation at TC = 25°C  
Peak diode recovery voltage slope  
dv/dt (3)  
15  
V/ns  
Insulation withstand voltage (RMS) from  
all three leads to external heat sink  
(t=1s;TC=25°C)  
VISO  
--  
2500  
V
Tj  
Operating junction temperature  
Storage temperature  
-55 to 150  
°C  
Tstg  
1. Limited only by maximum temperature allowed  
2. Pulse width limited by safe operating area  
3. ISD 5A, di/dt 400A/µs, VDD =80% V(BR)DSS  
Table 2.  
Thermal data  
Max value  
Symbol  
Parameter  
Unit  
TO-220 / DPAK  
IPAK  
TO-220FP  
Rthj-case Thermal resistance junction-case max  
Rthj-amb Thermal resistance junction-amb max  
2.78  
6.25  
°C/W  
°C/W  
62.5  
300  
Maximum lead temperature for soldering  
Tl  
°C  
purpose  
Table 3.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-  
repetitive (pulse width limited by Tj max)  
IAS  
2
A
Single pulse avalanche energy  
EAS  
100  
mJ  
(starting Tj=25°C, ID=IAS, VDD= 50V)  
3/17  
Electrical characteristics  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 4.  
On/off states  
Parameter  
Symbol  
Test conditions  
ID = 1mA, VGS= 0  
Min Typ Max Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
500  
V
Vdd = 400V, Id = 5A,  
Vgs = 10V  
dv/dt(1)  
Drain-source voltage slope  
40  
V/ns  
V
DS = Max rating,  
1
µA  
µA  
Zero gate voltage drain  
current (VGS = 0)  
IDSS  
VDS = Max rating,Tc = 125°C  
100  
Gate body leakage current  
(VDS = 0)  
IGSS  
VGS = 20V  
100  
4
nA  
VGS(th)  
RDS(on)  
VDS= VGS, ID = 250µA  
VGS= 10V, ID=2.5A  
Gate threshold voltage  
2
3
V
Static drain-source on  
resistance  
0.70 0.78  
1. Characteristics value at turn off on inductive load  
Table 5.  
Dynamic  
Parameter  
Symbol  
Test conditions  
Min. Typ. Max. Unit  
(1)  
VDS =15V, ID= 2.5A  
Forward transconductance  
4
S
gfs  
Input capacitance  
Ciss  
Coss  
Crss  
400  
35  
4
pF  
pF  
pF  
Output capacitance  
VDS = 50V, f =1 MHz, VGS = 0  
Reverse transfer  
capacitance  
Equivalent output  
capacitance  
(2)  
Coss eq.  
VGS = 0V, VDS = 0V to 400V  
67  
6
pF  
f=1MHz Gate DC Bias=0  
Test signal level=20mV  
Open drain  
Rg  
Gate input resistance  
Qg  
Qgs  
Qgd  
VDD = 400V, ID = 5A  
Total gate charge  
Gate-source charge  
Gate-drain charge  
12  
2
nC  
nC  
nC  
VGS = 10V  
6
(see Figure 16)  
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
4/17  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Electrical characteristics  
Table 6.  
Switching times  
Symbol  
Parameter  
Test conditions  
Min  
Typ  
Max Unit  
td(on)  
tr  
td(off)  
tf  
Turn-on delay time  
Rise time  
7
5
ns  
ns  
ns  
ns  
VDD = 250V, ID = 2.5A,  
RG = 4.7, VGS = 10V  
(see Figure 15)  
Turn-off delay time  
Fall time  
40  
9
Table 7.  
Source drain diode  
Symbol  
Parameter  
Test conditions  
Min  
Typ  
Max Unit  
ISD  
Source-drain current  
5
A
A
(1)  
Source-drain current (pulsed)  
20  
ISDM  
(2)  
ISD = 5A, VGS = 0  
Forward on voltage  
1.3  
V
VSD  
trr  
ISD =5A, di/dt =100A/µs,  
VDD=100V, Tj=25°C  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
250  
2
ns  
µC  
A
Qrr  
13  
(see Figure 17)  
IRRM  
trr  
ISD =5A, di/dt =100A/µs,  
VDD=100V, Tj=150°C  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
330  
2
ns  
µC  
A
Qrr  
13  
(see Figure 17)  
IRRM  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
5/17  
Electrical characteristics  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
2.1  
Electrical characteristics (curves)  
Figure 1.  
Safe operating area for TO-220 /  
DPAK / IPAK  
Figure 2.  
Figure 4.  
Figure 6.  
Thermal impedance for TO-220 /  
DPAK / IPAK  
Figure 3.  
Figure 5.  
6/17  
Safe operating area for TO-220FP  
Thermal impedance for TO-220FP  
Output characteristics  
Transfer characteristics  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Electrical characteristics  
Figure 7.  
Transconductance  
Figure 8.  
Static drain-source on resistance  
Figure 9.  
Gate charge vs. gate-source  
voltage  
Figure 10. Capacitance variations  
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs.  
vs. temperature temperature  
7/17  
Electrical characteristics  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Figure 13. Source-drain diode forward  
characteristics  
Figure 14. Normalized BV  
vs. temperature  
DSS  
8/17  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Test circuit  
3
Test circuit  
Figure 15. Switching times test circuit for  
resistive load  
Figure 16. Gate charge test circuit  
Figure 17. Test circuit for inductive load  
switching and diode recovery times  
Figure 18. Unclamped Inductive load test  
circuit  
Figure 19. Unclamped inductive waveform  
Figure 20. Switching time waveform  
9/17  
Package mechanical data  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
10/17  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Package mechanical data  
TO-220 mechanical data  
mm  
Typ  
inch  
Dim  
Min  
Max  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.49  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
11/17  
Package mechanical data  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
TO-220FP MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1
2 3  
L5  
L2  
L4  
12/17  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Package mechanical data  
TO-251 (IPAK) MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
2.2  
TYP.  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
TYP.  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
0068771-E  
13/17  
Package mechanical data  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
DPAK MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
MAX.  
MIN.  
MAX.  
A
A1  
A2  
B
2.2  
0.9  
2.4  
1.1  
0.23  
0.9  
5.4  
0.6  
0.6  
6.2  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.019  
0.236  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.03  
0.64  
5.2  
b4  
C
0.45  
0.48  
6
C2  
D
D1  
E
5.1  
0.200  
6.4  
6.6  
0.252  
0.260  
E1  
e
4.7  
0.185  
0.090  
2.28  
e1  
H
4.4  
9.35  
1
4.6  
0.173  
0.368  
0.039  
0.181  
0.397  
10.1  
L
(L1)  
L2  
L4  
R
2.8  
0.8  
0.110  
0.031  
0.6  
0°  
1
0.023  
0°  
0.039  
8°  
0.2  
0.008  
V2  
8°  
0068772-F  
14/17  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
Packaging mechanical data  
5
Packaging mechanical data  
DPAK FOOTPRINT  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
15/17  
Revision history  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
6
Revision history  
Table 8.  
Date  
10-Apr-2007  
Revision history  
Revision  
Changes  
1
First release  
16/17  
STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N  
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17/17  

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STMICROELECTR

STD802S

Transistor
SAMHOP