STD7NK30Z [STMICROELECTRONICS]
N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET; N沟道， 300 V ， 0.80 Ω ， 5 A TO - 220 ， TO- 220FP ， DPAK齐纳保护超网™功率MOSFET
| 型号： | STD7NK30Z |
| 厂家： | 
ST |
| 描述： | N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET |
| 文件： | 总15页 (文件大小：728K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD7NK30Z, STF7NK30Z
STP7NK30Z
N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK
Zener-protected SuperMESH™ Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
Pw
STF7NK30Z
STP7NK30Z
STD7NK30Z
300 V
300 V
300 V
< 0.9 Ω
< 0.9 Ω
< 0.9 Ω
5 A
5 A
5 A
20 W
50 W
50 W
3
2
3
1
2
1
TO-220
TO-220FP
■ 100% avalanche tested
3
■ Extremely high dv/dt capability
■ Gate charge minimized
1
DPAK
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
Figure 1.
Internal schematic diagram
■ Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
Table 1.
Device summary
Order codes
Marking
Package
DPAK
Packaging
STD7NK30Z
STF7NK30Z
STP7NK30Z
D7NK30Z
F7NK30Z
P7NK30Z
Tape and reel
Tube
TO-220FP
TO-220
Tube
March 2009
Rev 5
1/15
www.st.com
15
Electrical ratings
STx7NK30Z
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
TO-220, DPAK
Unit
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
300
30
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
5
5 (1)
3.2 (1)
20 (1)
20
A
ID
3.2
20
50
0.4
A
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
0.16
W/°C
Gate source ESD(HBM-C=100 pF,
R=1.5 kΩ)
VESD(G-S)
2800
4.5
V
dv/dt (3) Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
VISO
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
V
Tj
Operating junction temperature
Storage temperature
-55 to 150
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.
Table 3.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220, DPAK
TO-220FP
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
2.50
6.25
V
V
62.5
Maximum lead temperature for soldering
purpose
Tl
300
A
Table 4.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
IAR
5
A
Single pulse avalanche energy
EAS
130
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
2/15
STx7NK30Z
Electrical characteristics
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID =1 mA, VGS = 0
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
IDSS
300
V
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
VDS=max rating
1
µA
µA
VDS=max rating @125 °C
50
IGSS
VGS
=
20 V
10
µA
V
VGS(th)
RDS(on)
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 2.5 A
3
3.75
0.80
4.5
Static drain-source on
resistance
0.90
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS =15 V I = 2.5 A
2.5
S
, D
pF
pF
pF
Input capacitance
Ciss
Coss
Crss
380
74
Output capacitance
VDS = 25 V, f = 1MHz,
VGS = 0
Reverse transfer
capacitance
15
Equivalent output
capacitance
(2)
Coss eq.
VGS = 0, VDS = 0 to 240 V
30
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 240 V, ID = 7 A,
VGS = 10 V
13
4.5
7.6
nC
nC
nC
17
Figure 16
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
3/15
Electrical characteristics
STx7NK30Z
Max. Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
11
25
20
10
ns
ns
ns
ns
VDD = 150 V, ID = 3.5 A,
RG = 4.7 Ω, VGS = 10 V
Figure 15
Turn-off-delay time
Fall time
tr(Voff)
Off-voltage rise time
Fall time
8.5
8.5
20
ns
ns
ns
VDD = 240 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
Figure 15
tf
tc
Cross-over time
Table 8.
Symbol
Source Drain Diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
ISD
5
A
A
Source-drain current
(pulsed)
(1)
ISDM
20
(2)
VSD
Forward On voltage
ISD = 5 A, VGS = 0
1.6
V
trr
Reverse recovery time
ISD = 7 A, di/dt = 100 A/µs
154
716
9.3
ns
nC
A
Qrr
Reverse recovery charge VDD = 40 V, Tj = 150 °C
IRRM
Reverse recovery current Figure 20
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Igs= 1mA (open drain)
Min.
Typ.
Max. Unit
Gate-source breakdown
voltage
(1)
BVGSO
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
4/15
STx7NK30Z
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Safe operating area for TO-220FP
Output characteristics
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220
Figure 4.
Thermal impedance for TO-220FP
Figure 6.
Transfer characteristics
5/15
Electrical characteristics
STx7NK30Z
Figure 8.
Static drain source on resistance
Figure 9.
Normalized BV
vs temperature
DSS
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
6/15
STx7NK30Z
Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
7/15
Test circuits
STx7NK30Z
3
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
µF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/15
STx7NK30Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
9/15
Package mechanical data
STx7NK30Z
TO-220 mechanical data
mm
inch
Typ
Dim
Min
Typ
Max
Min
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
10/15
STx7NK30Z
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_J
11/15
Package mechanical data
STx7NK30Z
TO-252 (DPAK) mechanical data
mm.
DIM.
min.
typ
max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
12/15
STx7NK30Z
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
13/15
Revision history
STx7NK30Z
6
Revision history
Table 10. Revision history
Date
Revision
Changes
10-May-2005
05-Sep-2005
04-Jan-2006
22-Mar-2006
05-Mar-2009
1
2
3
4
5
New stylesheet
Inserted Ecopack indication
Some values changed on table 8.
Inserted DPAK
Section 4: Package mechanical data has been updated
14/15
STx7NK30Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
15/15
相关型号：
STD7NK40
N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET
STMICROELECTR
STD7NK40Z
N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET
STMICROELECTR
STD7NK40Z-1
N-CHANNEL 400V-0.85ohm-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET
STMICROELECTR
STD7NM50N
N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
STMICROELECTR
STD7NM50N-1
N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
STMICROELECTR
STD7NM60N
N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
STMICROELECTR
STD7NM80
N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET
STMICROELECTR
STD7NM80-1
N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明