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STF15N65M5 [STMICROELECTRONICS]

N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages; N沟道650 V， 0.308 I©典型值，11是MDmeshâ ?? ¢ V功率MOSFET采用TO- 220FP ， I2PAKFP和TO- 220封装
STF15N65M5
型号： STF15N65M5
厂家： ST    ST
描述：

N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
N沟道650 V， 0.308 I©典型值，11是MDmeshâ ?? ¢ V功率MOSFET采用TO- 220FP ， I2PAKFP和TO- 220封装
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STF15N65M5, STFI15N65M5,  
STP15N65M5  
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET  
in TO-220FP, I2PAKFP and TO-220 packages  
Datasheet — production data  
Features  
VDS  
TJmax  
@
RDS(on)  
max  
Order codes  
ID  
3
2
1
STF15N65M5  
STFI15N65M5  
STP15N65M5  
TO-220FP  
710 V  
< 0.34 Ω  
11 A  
TAB  
■ Worldwide best RDS(on) * area  
3
1
■ Higher VDSS rating and high dv/dt capability  
■ Excellent switching performance  
■ 100% avalanche tested  
2
2
3
1
I2PAKFP  
TO-220  
Figure 1.  
Internal schematic diagram  
Applications  
$ꢅꢆꢇ 4!"ꢈ  
■ Switching applications  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢈ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
3ꢅꢉꢈ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STF15N65M5  
STFI15N65M5  
STP15N65M5  
TO-220FP  
I2PAKFP  
TO-220  
15N65M5  
Tube  
November 2012  
Doc ID 022863 Rev 2  
1/17  
This is information on a product in full production.  
www.st.com  
17  
Contents  
STF15N65M5, STFI15N65M5, STP15N65M5  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
2/17  
Doc ID 022863 Rev 2  
STF15N65M5, STFI15N65M5, STP15N65M5  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Value  
Parameter  
Unit  
TO-220FP  
I2PAKFP  
TO-220  
VGS  
ID  
Gate-source voltage  
25  
V
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
11  
6.9  
44  
85  
11(1)  
6.9(1)  
44(1)  
25  
A
A
ID  
(1)  
IDM  
A
PTOT  
Total dissipation at TC = 25 °C  
W
dv/dt (2) Peak diode recovery voltage slope  
15  
V/ns  
Insulation withstand voltage (RMS) from all  
three leads to external heat sink  
(t = 1 s; TC = 25 °C)  
VISO  
2500  
V
Tstg  
Tj  
Storage temperature  
- 55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1. Limited by maximum junction temperature.  
2. ≤ 11 A, di/dt ≤400 A/µs; V = 400 V, V  
I
< V  
(BR)DSS  
SD  
DD  
DS(peak)  
Table 3.  
Symbol  
Thermal data  
Value  
Parameter  
Unit  
TO-220FP  
I2PAKFP  
TO-220  
Rthj-case Thermal resistance junction-case max  
Rthj-amb Thermal resistance junction-ambient max  
5
1.47  
°C/W  
°C/W  
62.5  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Value  
Unit  
Avalanche current, repetetive or not repetetive  
(pulse width limited by Tjmax  
IAR  
2.5  
A
)
Single pulse avalanche energy (starting tj=  
25°C, ID= IAR; VDD=50 V)  
EAS  
160  
mJ  
Doc ID 022863 Rev 2  
3/17  
Electrical characteristics  
STF15N65M5, STFI15N65M5, STP15N65M5  
2
Electrical characteristics  
(TC = 25 °C unless otherwise specified)  
Table 5.  
Symbol  
On /off states  
Parameter  
Test conditions  
ID = 1 mA, VGS = 0  
VDS = 650 V  
Min.  
Typ.  
Max. Unit  
Drain-source  
breakdown voltage  
V(BR)DSS  
650  
V
Zero gate voltage  
1
µA  
µA  
IDSS  
drain current (VGS = 0) VDS = 650 V, TC=125 °C  
100  
Gate-body leakage  
IGSS  
VGS  
=
25 V  
100 nA  
current (VDS = 0)  
VGS(th)  
RDS(on)  
Gate threshold voltage VDS = VGS, ID = 250 µA  
Static drain-source on-  
3
4
5
V
V
GS = 10 V, ID = 5.5 A  
0.308  
0.34  
Ω
resistance  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Input capacitance  
Output capacitance  
Ciss  
Coss  
Crss  
816  
23  
pF  
V
DS = 100 V, f = 1 MHz,  
-
-
-
pF  
pF  
VGS = 0  
Reverse transfer  
capacitance  
2.6  
Equivalent  
capacitance time  
related  
(1)  
Co(tr)  
-
70  
pF  
VDS = 0 to 520 V, VGS = 0  
f = 1 MHz open drain  
Equivalent  
capacitance energy  
related  
(2)  
Co(er)  
-
-
21  
5
-
-
pF  
Intrinsic gate  
resistance  
RG  
Ω
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 520 V, ID = 5.5 A,  
VGS = 10 V  
22  
5.5  
11  
nC  
nC  
nC  
-
-
(see Figure 18)  
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C  
when  
oss  
V
increases from 0 to 80% V  
DSS  
DS  
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C  
oss  
when V increases from 0 to 80% V  
DS  
DSS  
4/17  
Doc ID 022863 Rev 2  
STF15N65M5, STFI15N65M5, STP15N65M5  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 7.  
Symbol  
Switching times  
Parameter  
Test conditions  
td(V)  
tr (V)  
tf (i)  
Voltage delay time  
Voltage rise time  
Current fall time  
Crossing time  
30  
8
ns  
ns  
ns  
ns  
VDD = 400 V, ID = 7 A,  
RG = 4.7 Ω, VGS = 10 V  
(see Figure 19 and  
Figure 22)  
-
-
11  
tc(off)  
12.5  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
ISD  
Source-drain current  
11  
44  
A
A
-
-
(1)  
ISDM  
Source-drain current (pulsed)  
(2)  
VSD  
Forward on voltage  
ISD = 11 A, VGS = 0  
1.5  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
247  
2.4  
ns  
µC  
A
ISD = 11 A, di/dt = 100 A/µs  
Qrr  
-
-
VDD = 100 V (see Figure 22)  
IRRM  
19.5  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 11 A, di/dt = 100 A/µs  
DD = 100 V, Tj = 150 °C  
(see Figure 22)  
312  
3
ns  
µC  
A
Qrr  
V
IRRM  
19  
1. Pulse width limited by safe operating area.  
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 022863 Rev 2  
5/17  
Electrical characteristics  
STF15N65M5, STFI15N65M5, STP15N65M5  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area for TO-220FP  
and I2PAKFP  
Figure 3.  
Thermal impedance for TO-220FP  
and I2PAKFP  
AM15286v1  
I
D
(A)  
10  
10µs  
1
100µs  
1ms  
Tj=150°C  
Tc=25°C  
10ms  
0.1  
Single  
pulse  
0.01  
10  
VDS(V)  
0.1  
1
100  
Figure 4.  
Safe operating area for TO-220  
Figure 5.  
Thermal impedance for TO-220  
AM15285v1  
I
D
(A)  
10  
10µs  
100µs  
1
1ms  
10ms  
Tj=150°C  
Tc=25°C  
0.1  
Single  
pulse  
0.01  
10  
V
DS(V)  
0.1  
1
100  
Figure 6.  
Output characteristics  
Figure 7.  
Transfer characteristics  
AM15287v1  
AM152887v1  
I
D
(A)  
I
D
(A)  
V
= 9, 10 V  
V
= 25 V  
GS  
DS  
20  
15  
10  
20  
15  
10  
V
= 8 V  
GS  
V
= 7 V  
GS  
5
0
5
0
V
= 6 V  
GS  
5
20  
25 VDS(V)  
7
8
9 VGS(V)  
0
10  
15  
3
5
6
4
6/17  
Doc ID 022863 Rev 2  
 
STF15N65M5, STFI15N65M5, STP15N65M5  
Electrical characteristics  
Figure 8.  
Gate charge vs gate-source voltage Figure 9.  
Static drain-source on-resistance  
AM15289v1  
DS  
AM15293v1  
V
(V)  
GS  
R
DS(on)  
(Ω)  
V
V
DD=520V  
=5.5A  
(V)  
12  
V
GS=10V  
0.35  
0.33  
0.31  
0.29  
500  
I
D
VDS  
10  
8
400  
300  
200  
6
4
100  
0
0.27  
0.25  
2
0
10  
20  
25  
Q
g(nC)  
ID(A)  
0
5
15  
0
4
6
10  
2
8
Figure 10. Capacitance variations  
Figure 11. Output capacitance stored energy  
AM15290v1  
AM15291v1  
C
Eoss  
(pF)  
(µJ)  
4
3.5  
1000  
Ciss  
3
2.5  
2
100  
10  
1
Coss  
Crss  
1.5  
1
0.5  
0
0
0.1  
100  
200  
400 500  
600  
1
10  
V
DS(V)  
100  
300  
VDS(V)  
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs  
vs temperature temperature  
AM05459v2  
AM05460v2  
V
GS(th)  
R
DS(on)  
(norm)  
(norm)  
V
= 10 V  
GS  
I = 5.5 A  
I
V
D
= 250 µA  
1.10  
2.1  
D
DS = VGS  
1.9  
1.7  
1.5  
1.3  
1.1  
1.00  
0.90  
0.80  
0.9  
0.7  
0.5  
-50  
-25  
0.70  
-50  
-25  
0
25 50 75  
TJ(°C)  
0
25 50 75  
TJ(°C)  
100  
100  
Doc ID 022863 Rev 2  
7/17  
Electrical characteristics  
STF15N65M5, STFI15N65M5, STP15N65M5  
Figure 14. Source-drain diode forward  
characteristics  
Figure 15. Normalized BVDSS vs temperature  
AM05461v1  
AM10399v1  
V
(V)  
SD  
VDS  
(norm)  
TJ=-50°C  
1.08  
1.2  
ID = 1mA  
1.06  
1.04  
1.02  
1.00  
1.0  
0.8  
0.6  
TJ=25°C  
TJ=150°C  
0.98  
0.4  
0.2  
0.96  
0.94  
0.92  
0
0
-50  
-25  
10  
20  
30  
40  
50 ISD(A)  
0
25 50 75  
TJ(°C)  
100  
Figure 16. Switching losses vs gate resistance  
(1)  
AM15292v1  
E
(μJ)  
120  
100  
Eon  
VDD=400V  
VGS=10V  
ID=7A  
80  
60  
40  
20  
0
Eoff  
50  
20  
30  
40  
10  
RG(Ω)  
0
1. Eon including reverse recovery of a SiC diode  
8/17  
Doc ID 022863 Rev 2  
STF15N65M5, STFI15N65M5, STP15N65M5  
Test circuits  
3
Test circuits  
Figure 17. Switching times test circuit for  
resistive load  
Figure 18. Gate charge test circuit  
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6'  
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2'  
6'3  
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Figure 19. Test circuit for inductive load  
switching and diode recovery times  
Figure 20. Unclamped inductive load test  
circuit  
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Figure 21. Unclamped inductive waveform  
Figure 22. Switching time waveform  
- off  
Inductive Load Turn  
6ꢅ"2ꢈ$33  
Id  
6$  
90%Vds  
90%Id  
td(v)  
)$-  
Vgs  
90%Vgs  
10%Vds  
on  
)$  
Vgs(I(t))  
6$$  
6$$  
10%Id  
Vds  
tr(v)  
tf(i)  
tc(off)  
!-ꢀꢁꢂꢃꢆVꢁ  
AM05540v1  
Doc ID 022863 Rev 2  
9/17  
Package mechanical data  
STF15N65M5, STFI15N65M5, STP15N65M5  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®  
specifications, grade definitions and product status are available at: www.st.com.  
ECOPACK® is an ST trademark.  
10/17  
Doc ID 022863 Rev 2  
STF15N65M5, STFI15N65M5, STP15N65M5  
Package mechanical data  
Table 9.  
Dim.  
TO-220FP mechanical data  
mm  
Min.  
Typ.  
Max.  
A
B
4.4  
2.5  
4.6  
2.7  
D
2.5  
2.75  
0.7  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
1
F1  
F2  
G
1.70  
1.70  
5.2  
G1  
H
2.7  
10  
10.4  
L2  
L3  
L4  
L5  
L6  
L7  
Dia  
16  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
16.4  
9.3  
3
3.2  
Doc ID 022863 Rev 2  
11/17  
Package mechanical data  
Figure 23. TO-220FP drawing  
STF15N65M5, STFI15N65M5, STP15N65M5  
7012510_Rev_K_B  
12/17  
Doc ID 022863 Rev 2  
STF15N65M5, STFI15N65M5, STP15N65M5  
Package mechanical data  
Table 10. I2PAKFP (TO-281) mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
B
4.40  
2.50  
2.50  
0.65  
0.45  
0.75  
4.60  
2.70  
2.75  
0.85  
0.70  
1.00  
1.20  
5.20  
10.40  
23.00  
14.10  
10.85  
3.20  
1.25  
7.50  
D
D1  
E
F
F1  
G
4.95  
10.00  
21.00  
13.20  
10.55  
2.70  
-
H
L1  
L2  
L3  
L4  
L5  
L6  
0.85  
7.30  
Figure 24. I2PAKFP (TO-281) drawing  
ꢋꢆꢍꢁꢄꢀꢊ REVꢌ!  
Doc ID 022863 Rev 2  
13/17  
Package mechanical data  
STF15N65M5, STFI15N65M5, STP15N65M5  
Table 11. TO-220 type A mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
b1  
c
D
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
∅P  
Q
3.50  
3.93  
16.40  
28.90  
3.75  
2.65  
3.85  
2.95  
14/17  
Doc ID 022863 Rev 2  
STF15N65M5, STFI15N65M5, STP15N65M5  
Figure 25. TO-220 type A drawing  
Package mechanical data  
0015988_typeA_Rev_S  
Doc ID 022863 Rev 2  
15/17  
Revision history  
STF15N65M5, STFI15N65M5, STP15N65M5  
5
Revision history  
Table 12. Document revision history  
Date  
Revision  
Changes  
05-Mar-2012  
1
First release.  
– The part number STB15N65M5 has been moved to a separate  
datasheet.  
09-Nov-2012  
2
– Added Section 2.1: Electrical characteristics (curves).  
– Minor text changes.  
16/17  
Doc ID 022863 Rev 2  
STF15N65M5, STFI15N65M5, STP15N65M5  
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