STGW28IH120DF [STMICROELECTRONICS]

IGBT;
STGW28IH120DF
型号: STGW28IH120DF
厂家: ST    ST
描述:

IGBT

双极性晶体管
文件: 总11页 (文件大小:630K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STGW28IH120DF  
STGWT28IH120DF  
1200 V, 25 A IH series  
trench gate field-stop IGBT  
Datasheet - preliminary data  
Features  
Designed for soft commutation only  
Maximum junction temperature: T = 175 °C  
J
Minimized tail current  
Low saturation voltage: V  
= 2.0 V (typ.)  
CE(sat)  
3
@ I = 25 A  
C
2
3
1
2
Tight parameters distribution  
Safe paralleling  
1
Low V soft recovery co-packaged diode  
TO-247  
TO-3P  
F
Low thermal resistance  
Lead free package  
Applications  
Figure 1. Internal schematic diagram  
Induction heating  
Microwave oven  
Resonant converters  
Description  
These IGBTs are developed using an advanced  
proprietary trench gate field-stop structure and  
performance is optimized in both conduction and  
switching losses. A freewheeling diode with a low  
drop forward voltage is co-packaged. The result is  
a product specifically designed to maximize  
efficiency for any resonant and soft-switching  
application.  
Table 1. Device summary  
Order code  
Marking  
Package  
Packaging  
STGW28IH120DF  
STGWT28IH120DF  
GW28IH120DF  
GWT28IH120DF  
TO-247  
TO-3P  
Tube  
Tube  
March 2013  
DocID023490 Rev 4  
1/11  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
11  
Electrical ratings  
STGW28IH120DF, STGWT28IH120DF  
1
Electrical ratings  
Table 2. Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
VCES  
IC  
Collector-emitter voltage (VGE = 0)  
Continuous collector current at TC = 25 °C  
Continuous collector current at TC = 100 °C  
Pulsed collector current  
1200  
50  
V
A
IC  
25  
A
(1)  
ICP  
100  
A
VGE  
IF  
Gate-emitter voltage  
±20  
V
Continuous forward current at TC = 25 °C  
Continuous forward current at TC = 100 °C  
Pulsed forward current  
50  
A
IF  
25  
A
IFP(1)  
PTOT  
TSTG  
TJ  
100  
A
Total dissipation at TC = 25 °C  
Storage temperature range  
375  
W
°C  
°C  
- 55 to 150  
- 40 to 175  
Operating junction temperature  
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA  
Table 3. Thermal data  
Symbol  
Parameter  
Value  
Unit  
RthJC  
RthJC  
RthJA  
Thermal resistance junction-case IGBT  
Thermal resistance junction-case diode  
Thermal resistance junction-ambient  
0.4  
1.47  
50  
°C/W  
°C/W  
°C/W  
2/11  
DocID023490 Rev 4  
STGW28IH120DF, STGWT28IH120DF  
Electrical characteristics  
2
Electrical characteristics  
T = 25 °C unless otherwise specified.  
J
Table 4. Static characteristics  
Test conditions  
Symbol  
Parameter  
Min. Typ. Max. Unit  
Collector-emitter  
V(BR)CES breakdown voltage  
(VGE = 0)  
IC = 2 mA  
1200  
V
VGE = 15 V, IC = 25 A  
2
VGE = 15 V, IC = 25 A  
TJ = 125 °C  
2.25  
Collector-emitter saturation  
voltage  
VCE(sat)  
V
VGE = 15 V, IC = 25 A  
TJ = 175 °C  
2.35  
V
GE = 15 V, IC = 50 A  
2.55  
1.3  
IF = 25 A  
V
V
V
V
VF  
Forward on-voltage  
IF = 25 A TJ = 125 °C  
IF = 25 A TJ = 175 °C  
VCE = VGE, IC = 1 mA  
TBD  
TBD  
6.0  
VGE(th) Gate threshold voltage  
Collector cut-off current  
(VGE = 0)  
ICES  
V
CE = 1200 V  
250  
250  
µA  
nA  
Gate-emitter leakage  
IGES  
VGE = ± 20 V  
current (VCE = 0)  
Table 5. Dynamic characteristics  
Test conditions  
Symbol  
Parameter  
Min. Typ. Max. Unit  
Cies  
Input capacitance  
Output capacitance  
-
-
3500  
120  
-
-
pF  
pF  
Coes  
VCE = 25 V, f = 1 MHz,  
VGE = 0  
Reverse transfer  
capacitance  
Cres  
-
22  
-
pF  
Qg  
Qge  
Qgc  
Total gate charge  
-
-
-
88  
20  
24  
-
-
-
nC  
nC  
nC  
V
CC = 600 V, IC = 25 A,  
Gate-emitter charge  
Gate-collector charge  
VGE = 15 V, see Figure 4  
DocID023490 Rev 4  
3/11  
Electrical characteristics  
Symbol  
STGW28IH120DF, STGWT28IH120DF  
Table 6. IGBT switching characteristics (inductive load)  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
td(off)  
tf  
Turn-off delay time  
Current fall time  
TBD  
TBD  
0.93  
TBD  
TBD  
1.85  
ns  
ns  
V
CE = 600 V, IC = 25 A,  
-
-
-
-
RG = 22 , VGE = 15 V, see  
Figure 2  
(1)  
Eoff  
Turn-off switching losses  
Turn-off delay time  
Current fall time  
mJ  
ns  
td(off)  
tf  
VCE = 600 V, IC = 25 A,  
-
-
-
-
ns  
RG = 22 , VGE = 15 V,  
T = 175 °C, see Figure 2  
(1)  
J
Eoff  
Turn-off switching losses  
mJ  
1. Turn-off losses include also the tail of the collector current.  
Table 7. IGBT switching characteristics (capacitive load)  
Symbol  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
VCC = 900V, RG = 10 ,  
IC = 50 A, L = 500 µH,  
Csnub = 300 nF, see Figure 3  
-
-
235  
410  
-
-
(1)  
Eoff  
Turn-off switching losses  
µJ  
V
CC = 900V, RG = 10 ,  
IC = 50 A, L = 500 µH,  
snub = 300 nF, T = 175 °C,  
C
J
see Figure 3  
1. Turn-off losses include also the tail of the collector current.  
4/11  
DocID023490 Rev 4  
STGW28IH120DF, STGWT28IH120DF  
Test circuits  
3
Test circuits  
Figure 2. Test circuit for inductive load  
switching  
Figure 3. Test circuit for capacitive load  
switching  
Csnub  
AM01504v1  
AM17096v2  
Figure 4. Gate charge test circuit  
Figure 5. Switching waveform  
90%  
10%  
VG  
90%  
10%  
VCE  
Tr(Voff)  
Tcross  
90%  
10%  
IC  
Td(off)  
Toff  
Td(on)  
Ton  
Tf  
Tr(Ion)  
AM01505v1  
AM01506v1  
DocID023490 Rev 4  
5/11  
Package mechanical data  
STGW28IH120DF, STGWT28IH120DF  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com.  
ECOPACK is an ST trademark.  
Table 8. TO-247 mechanical data  
mm.  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
b
4.85  
2.20  
1.0  
5.15  
2.60  
1.40  
2.40  
3.40  
0.80  
20.15  
15.75  
5.60  
14.80  
4.30  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
5.30  
14.20  
3.70  
D
E
e
5.45  
18.50  
5.50  
L
L1  
L2  
P  
R  
S
3.55  
4.50  
5.30  
3.65  
5.50  
5.70  
6/11  
DocID023490 Rev 4  
 
STGW28IH120DF, STGWT28IH120DF  
Package mechanical data  
Figure 6. TO-247 drawing  
0075325_G  
DocID023490 Rev 4  
7/11  
 
Package mechanical data  
STGW28IH120DF, STGWT28IH120DF  
Table 9. TO-3P mechanical data  
mm  
Dim.  
Min.  
Typ.  
Max.  
A
A1  
A2  
b
4.60  
1.45  
1.20  
0.80  
1.80  
2.80  
0.55  
19.70  
5
1.50  
1.40  
1
1.65  
1.60  
1.20  
2.20  
3.20  
0.75  
20.10  
b1  
b2  
c
0.60  
19.90  
13.90  
D
D1  
E
15.40  
15.80  
E1  
E2  
e
13.60  
9.60  
5.45  
20  
5.15  
5.75  
L
19.50  
20.50  
L1  
L2  
øP  
Q
3.50  
18.40  
18.20  
3.10  
18.60  
3.30  
5
Q1  
3.80  
8/11  
DocID023490 Rev 4  
STGW28IH120DF, STGWT28IH120DF  
Package mechanical data  
Figure 7. TO-3P drawing  
8045950_A  
DocID023490 Rev 4  
9/11  
Revision history  
STGW28IH120DF, STGWT28IH120DF  
5
Revision history  
Table 10. Document revision history  
Changes  
Date  
Revision  
07-Feb-2012  
28-Nov-2012  
1
2
Initial release.  
Added Section 2.1 Electrical characteristics (curves).  
Modified title in cover page.  
Removed Section 2.1.  
08-Feb-2013  
14-Mar-2013  
3
4
Added new order code STGW28IH120DF and mechanical data  
Table 8 on page 6, Figure 6 on page 7.  
Modified title, features and description in cover page.  
10/11  
DocID023490 Rev 4  
STGW28IH120DF, STGWT28IH120DF  
Please Read Carefully:  
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DocID023490 Rev 4  
11/11  

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