STH165N10F4-2 [STMICROELECTRONICS]

160A, 100V, 0.0051ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3;


型号：	STH165N10F4-2
厂家：	ST
描述：	160A, 100V, 0.0051ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3 开关脉冲晶体管
文件：	总12页 (文件大小：186K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STH165N10F4-2

STP165N10F4

N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK

STripFET™ DeepGATE™ Power MOSFET

Preliminary data

Features

Type

V_DSS

R_DS(on)max

I_D

STH165N10F4-2

STP165N10F4

100 V

< 5.1 mΩ

< 5.5 mΩ

160 A

120 A

■ N-channel enhancement mode

■ 100% avalanche rated

■ Low gate charge

H²PAK

TO-220

■ Very low on-resistance

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This STripFET™ DeepGATE™ Power MOSFET

technology is among the latest improvements,

which have been especially tailored to minimize

on-state resistance, with a new gate structure,

providing superior switching performances.

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STH165N10F4-2

STP165N10F4

165N10F4

H²PAK

Tape and reel

Tube

TO-220

June 2009

Doc ID 15781 Rev 1

1/12

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

Contents

STH165N10F4-2, STP165N10F4

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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Doc ID 15781 Rev 1

STH165N10F4-2, STP165N10F4

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

TO-220

H²PAK

V_DS

V_GS

I_D

Drain-source voltage (V_GS= 0)

Gate- source voltage

100

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

120

110

480

160

115

640

I_D

(1)

I_DM

P_TOT

Total dissipation at T_C= 25 °C

Derating factor

315

2.1

W/°C

(2)

E_AS

Single pulse avalanche energy

Storage temperature

TBD

T_stg

T_j

– 55 to 175

175

°C

Max. operating junction temperature

1. Pulse width limited by safe operating area

2. Starting T_j= 25 °C, I_D= 45 A, V_DD= 60 V

Table 3.

Symbol

Thermal data

Value

Parameter

Unit

TO-220,

0.48

H²PAK

R_thj-case

R_thj-pcb

R_thj-a

T_l

Thermal resistance junction-case max

Thermal resistance junction-pcb max

°C/W

35⁽¹⁾

Thermal resistance junction-ambient max

Maximum lead temperature for soldering purpose

62.5

315

°C/W

°C

1. When mounted on FR-4 board of 1 inch², 2 oz Cu

Doc ID 15781 Rev 1

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Electrical characteristics

STH165N10F4-2, STP165N10F4

Electrical characteristics

=25°C unless otherwise specified)

CASE

Table 4.

Symbol

On/off states

Parameter

Test conditions

Min.

Typ.

Max. Unit

Drain-source

V_(BR)DSS

I_D= 250 µA, V_GS= 0

100

Breakdown voltage

_DS= max rating

µA

Zero gate voltage

I_DSS

Drain current (V_GS= 0)

V_DS= max rating,T_C=125 °C

100

Gate-body leakage

current (V_DS= 0)

I_GSS

V_GS

20 V

100

V_GS(th)Gate threshold voltage

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 60 A⁽¹⁾

4.4

4.1

5.5

5.1

mΩ

Static drain-source on

R_DS(on)

_GS= 10 V, I_D= 80 A⁽²⁾

resistance

1. For TO-220

2. For H²PAK

Table 5.

Symbol

Dynamic

Parameter

Test conditions

Min.

Typ. Max. Unit

C_iss

Input capacitance

Output capacitance

10500

1170

V_DS= 25 V, f = 1 MHz,

C_oss

V_GS= 0

Reverse transfer

capacitance

C_rss

630

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

180

TBD

V_DD= 50 V, I_D= 120 A,

V_GS= 10 V

(see Figure 3)

Table 6.

Symbol

Switching times

Parameter

Test conditions

Min.

Typ. Max. Unit

V_DD= 50 V, I_D= 60 A

R_G= 4.7 Ω V_GS= 10 V

(see Figure 2)

t_d(on)

t_r

Turn-on delay time

Rise time

TBD

V_DD= 50 V, I_D= 60 A,

R_G= 4.7 Ω, V_GS= 10 V

(see Figure 2)

t_d(off)

t_f

Turn-off-delay time

Fall time

TBD

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Doc ID 15781 Rev 1

STH165N10F4-2, STP165N10F4

Electrical characteristics

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

120⁽¹⁾

160⁽²⁾

I_SD

Source-drain current

480⁽¹⁾

640⁽²⁾

(3)

I_SDM

Source-drain current (pulsed)

Forward on voltage

(4)

V_SD

I_SD= 120 A, V_GS= 0

TBD

I_SD= 120 A,

V_DD= 25 V

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

TBD

Q_rr

di/dt = 100 A/µs,

T_j= 150 °C

I_RRM

(see Figure 4)

1. For TO-220

2. For H²PAK

3. Pulse width limited by safe operating area.

4. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

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Test circuits

STH165N10F4-2, STP165N10F4

Test circuits

Figure 2.

Figure 4.

Figure 6.

Switching times test circuit for

resistive load

Figure 3.

Figure 5.

Figure 7.

Gate charge test circuit

Test circuit for inductive load

switching and diode recovery times

Unclamped inductive load test

circuit

Unclamped inductive waveform

Switching time waveform

6/12

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STH165N10F4-2, STP165N10F4

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK

specifications, grade definitions and product status are available at: www.st.com. ECOPACK

is an ST trademark.

Doc ID 15781 Rev 1

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Package mechanical data

STH165N10F4-2, STP165N10F4

TO-220 mechanical data

inch

Dim

Min

Typ

Max

Min

Typ

Max

4.40

0.61

1.14

0.48

15.25

4.60

0.88

1.70

0.70

15.75

0.173

0.024

0.044

0.019

0.6

0.181

0.034

0.066

0.027

0.62

1.27

0.050

10.40

2.70

5.15

1.32

6.60

2.72

0.393

0.094

0.194

0.048

0.244

0.094

0.511

0.137

0.409

0.106

0.202

0.051

0.256

0.107

0.551

0.154

2.40

4.95

1.23

6.20

2.40

L20

L30

∅P

3.50

3.93

16.40

0.645

28.90

1.137

3.75

3.85

2.95

0.147

0.104

0.151

0.116

2.65

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Doc ID 15781 Rev 1

STH165N10F4-2, STP165N10F4

Package mechanical data

Table 8.

Dim.

H²PAK 2 leads mechanical data

Min.

Typ.

Max.

4.30

0.03

1.17

4.98

0.50

0.78

10.00

7.171

15.30

1.27

4.93

7.45

1.5

4.80

0.20

1.37

5.18

0.90

0.85

10.40

7.971

15.80

1.40

5.23

7.85

1.7

2.6

2.9

0.20

0°

0.60

8°

Doc ID 15781 Rev 1

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Package mechanical data

Figure 8. H²PAK 2 leads drawing

STH165N10F4-2, STP165N10F4

8159712_B

Figure 9.

H²PAK 2 recommended footprint

8159712_B

10/12

Doc ID 15781 Rev 1

STH165N10F4-2, STP165N10F4

Revision history

Table 9.

Date

19-May-2009

Document revision history

Revision

Changes

First release

Doc ID 15781 Rev 1

11/12

STH165N10F4-2, STP165N10F4

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STH165N10F4-2 [STMICROELECTRONICS]

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