STK850 [STMICROELECTRONICS]
N-CHANNEL 30V - 0.0024 ヘ - 30A - PolarPAK-TM STripFET⑩ Power MOSFET; N沟道30V - 0.0024 Ω - 30A - 的PolarPAK -TM的STripFET ？功率MOSFET
| 型号： | STK850 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 30V - 0.0024 ヘ - 30A - PolarPAK-TM STripFET⑩ Power MOSFET |
| 文件： | 总12页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STK850
N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK™
STripFET™ Power MOSFET
General features
V
R
R
*Q
P
TOT
Type
DSS
DS(on)
DS(on)
g
STK850 30V <0.0029Ω 58.8 nC*mΩ
5.2W
■ ULTRA LOW TOP AND BOTTOM JUNCTION
TO CASE THERMAL RESISTANCE
■ VERY LOW CAPACITANCES
■ 100% R TESTED
g
PolarPAK™
■ FULLY INCAPSULATED DIE
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
Description
Internal schematic diagram
This MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, moreover the double sides
cooling package with ultra low junction to case
thermal resistance allows to handle higher levels
of current.
Applications
Top View
Bottom View
■ HIGH CURRENT VRM
■ SINCHRONOUS RECTIFICATION
■ DC-DC CONVERTERS FOR TELECOM
Order codes
Sales Type
Marking
Package
Packaging
STK850
K850
PolarPAK™
TAPE & REEL
Rev 3
1/12
February 2006
www.st.com
12
Electrical ratings
STK850
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
V
Drain-Source Voltage (V = 0)
30
± 16
30
V
V
DS
GS
GS
Gate-Source Voltage
I
Note 2
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
18.75
120
A
D
C
I
Note 1
Drain Current (pulsed)
A
DM
P
Note 2 Total Dissipation at T = 25°C
C
5.2
W
TOT
Derating Factor
0.0416
W/°C
T
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
T
stg
Table 2.
Thermal data
Typ.
Max
Unit
Rthj-amb
Thermal Resistance Junction-amb
20
0.8
2.2
24
°C/W
Note 2
Rthj-c
Thermal Resistance Junction-case (Top Drain)
Thermal Resistance Junction-case (Source)
1
°C/W
°C/W
Note 3
Rthj-c
2.7
Note 4
2/12
STK850
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 3.
On/off states
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown
Voltage
V
I = 250µA, V = 0
30
V
(BR)DSS
D
GS
V
= Max Rating,
1
µA
µA
Zero Gate Voltage Drain
DS
DS
I
I
DSS
Current (V = 0)
V
V
V
= Max Rating,Tc=125°C
10
GS
Gate Body Leakage Current
= ±16V
±100
2.5
nA
V
GSS
GS
DS
(V = 0)
DS
V
= V , I = 250µA
Gate Threshold Voltage
1
GS(th)
DS(on)
GS
D
V
V
= 10V, I = 15A
D
0.0024 0.0029
0.0029 0.0035
Ω
Ω
GS
Static Drain-Source On
Resistance
R
= 4.5V, I = 15A
GS
D
Table 4.
Symbol
Dynamic
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
Note 5
V
=10V, I = 15A
Forward Transconductance
48
S
fs
DS
DS
D
C
C
iss
Input Capacitance
3150
940
90
pF
pF
pF
V
=25V, f=1 MHz, V =0
Output Capacitance
oss
GS
Reverse Transfer Capacitance
C
rss
Q
V
V
=15V, I = 30A
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
24.5
8
32.5
nC
nC
nC
DD
GS
D
Q
Q
=4.5V
gs
gd
8.2
(see Figure 14)
Table 5.
Symbol
Switching times
Parameter
Test Conditions
= 15V, I = 15A,
Min.
Typ.
Max.
Unit
V
DD
D
t
Turn-on Delay Time
Rise Time
20
57
ns
ns
d(on)
R =4.7Ω, V =4.5V
G
GS
t
r
(see Figure 15)
=15V, I = 15A,
V
DD
D
t
Turn-off Delay Time
Fall Time
31
13
ns
ns
d(off)
R =4.7Ω, V =4.5V
G
GS
t
f
(see Figure 15)
3/12
Electrical characteristics
STK850
Table 6.
Symbol
Source drain diode
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Source-drain Current
30
A
A
SD
I
Note 1 Source-drain Current (pulsed)
120
SDM
V
Note 5
I
I
= 15A, V =0
Forward on Voltage
1.2
V
SD
SD
GS
t
= 30A, di/dt = 100A/µs,
=20V, Tj=150°C
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
39
39.8
2
ns
nC
A
SD
V
Q
DD
rr
(see Figure 15)
I
RRM
(1)Pulse width limited by package
(2) When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10sec
(3) Steady State
(4) Measured at Source pin when the device is mounted on FR-4 board in steady state
(5) Pulsed: pulse duration = 300µs, duty cycle 1.5%
PolarPAK is SILICONIX Trademark
4/12
STK850
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1. Safe Operating Area
Figure 3. Output Characteristics
Figure 5. Transconductance
Figure 2. Thermal Impedance
Figure 4. Transfer Characteristics
Figure 6. Static Drain-source on Resistance
5/12
Electrical characteristics
STK850
Figure 7. Gate Charge
Figure 8. Capacitance Variations
Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized On Resistance vs
vs Temperature
Temperature
Figure 11. Source-drain Diode Forward
Characteristics
Figure 12. Normalized BVDSS vs Temperature
6/12
STK850
Test circuits
3
Test circuits
Figure 13. Switching Times Test Circuit For
Resistive Load
Figure 14. Gate Charge Test Circuit
Figure 15. Test Circuit For Inductive Load
Switching and Diode Recovery
Times
7/12
Package mechanical data
STK850
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
8/12
STK850
Table 7.
Package mechanical data
PolarPAK (Option L) mechanical data
Ref
Dimensions
Millimiters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.75
0.80
0.85
0.05
0.68
0.61
2.39
1.19
0.43
0.30
6.30
6.04
5.31
5.05
0.030
0.031
0.033
0.002
0.027
0.024
0.094
0.047
0.017
0.012
0.248
0.238
0.209
0.199
A1
b1
b2
b3
b4
b5
c
0.48
0.41
2.19
0.89
0.23
0.20
6
0.58
0.51
2.29
1.04
0.33
0.25
6.15
5.89
5.16
4.90
0.019
0.016
0.086
0.035
0.009
0.008
0.236
2.226
0.197
0.187
0.009
0.020
0.012
0.020
0.166
0.043
0.054
0.009
0.169
0.135
0.009
0.002
0.006
0.137
0.022
0.051
0.154
0.023
0.020
0.090
0.041
0.013
0.010
0.242
2.232
0.203
0.193
D
D1
E
5.74
5.01
4.75
0.23
0.45
0.31
0.45
4.22
1.08
1.37
0.24
4.30
3.43
0.22
0.05
0.15
3.48
0.56
1.20
3.90
E1
H1
H2
H3
H4
K1
K2
K3
K4
M1
M2
M3
M4
P1
T1
T2
T3
T4
T5
<
0.56
0.51
0.56
4.52
1.18
0.022
0.020
0.022
0.178
0.046
0.41
0.016
4.37
1.13
0.172
0.044
4.50
3.58
4.70
3.73
0.177
0.141
0.185
0.147
0.20
3.64
0.76
0.25
4.10
0.95
0.008
0.143
0.030
0.010
0.150
0.037
0.18
10°
0.36
12°
0.007
10°
0.014
12°
0°
0°
9/12
Package mechanical data
STK850
Figure 16. Package dimentions plus footprint
10/12
STK850
Revision History
5
Revision History
Date
Revision
Changes
10-Nov-2005
19-Dec-2005
02-Feb-2006
1
2
3
First version
Complete version
Modified description on first page, mechanical data updated
11/12
STK850
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
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12/12
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