STN790A_08 [STMICROELECTRONICS]
Medium current, high performance, low voltage PNP transistor; 中等电流,高性能,低电压PNP晶体管![STN790A_08](http://pdffile.icpdf.com/pdf1/p00106/img/icpdf/STN790A_572550_icpdf.jpg)
型号: | STN790A_08 |
厂家: | ![]() |
描述: | Medium current, high performance, low voltage PNP transistor |
文件: | 总9页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STN790A
Medium current, high performance, low voltage PNP transistor
Features
■ Very low collector to emitter saturation voltage
■ DC current gain, h >100
FE
4
■ 3 A continuous collector current
■ 40 V breakdown voltage V
(BR)CER
3
■ SOT-223 plastic package for surface mounting
2
circuits in tape and reel packing
1
SOT-223
Applications
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger
Figure 1.
Internal schematic diagram
applications
■ Heavy load driver
Description
The device in manufactured in low voltage PNP
planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
Table 1.
Order code
STN790A
Device summary
Marking
Package
Packaging
N790A
SOT-223
Tape and reel
June 2008
Rev 4
1/9
www.st.com
9
Electrical ratings
STN790A
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
Collector-base voltage (I = 0)
-40
-40
V
V
CBO
E
V
Collector-emitter voltage (R = 47 Ω)
CER
BE
V
Collector-emitter voltage (I = 0)
-30
V
CEO
B
V
Emitter-base voltage (I = 0)
-5
V
EBO
C
I
Collector current
-3
A
C
I
Collector peak current (t < 5 ms)
-6
A
CM
P
P
Total dissipation at T
= 25 °C
1.6
W
°C
°C
tot
amb
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
(1)
R
78
°C/W
Thermal resistance junction-ambient
__max
thj-amb
1. Device mounted on PCB area of 1 cm2.
2/9
STN790A
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ. Max. Unit
V
V
= -30 V
Collector cut-off current
-10
µA
µA
CB
CB
I
CBO
EBO
(I = 0)
= -30 V; T = 100 °C
-100
E
C
Emitter cut-off current
I
V
= -4 V
-10
µA
V
EB
(I = 0)
C
Collector-emitter
breakdown voltage
(1)
(1)
I = -10 mA
-30
-40
V
V
C
(BR)CEO
(I = 0)
B
Collector-emitter
breakdown voltage
I = -10 mA
V
C
(BR)CER
(R = 47 Ω)
BE
Collector-base
breakdown voltage
V
V
I = -100 µA
-40
-5
V
V
(BR)CBO
C
(I = 0)
E
Emitter-base breakdown
I = -100 µA
(BR)EBO
E
voltage (I = 0)
C
I = -0.5 A
I = -5 mA
-0.15
-0.25
-0.5
V
V
V
V
C
B
I = -1.2 A
I = -20 mA
C
B
Collector-emitter
saturation voltage
(1)
I = -2 A
I = -20 mA
V
C
B
CE(sat)
-0.7
I = -3 A
I = -100 mA
B
C
I = -3 A
I = -100 mA
C
B
-0.9
-1
V
V
V
T = 100 °C
J
Base-emitter saturation
voltage
(1)
(1)
I = -1 A
I = -10 mA
-0.8
-0.8
V
C
B
BE(sat)
I = -1 A
V
= -2 V
Base-emitter on voltage
-1
V
C
CE
BE(on)
I = -10 mA
V
V
= -2 V
= -2 V
= -2 V
= -1 V
= -1 V
100
100
100
100
90
200
200
400
400
C
CE
CE
I = -500 mA
C
(1)
I = -1 A
V
DC current gain
h
C
CE
CE
CE
FE
I = -2 A
V
160
130
C
I = -3 A
V
C
3/9
Electrical characteristics
STN790A
Table 4.
Symbol
Electrical characteristics (continued)
Parameter
Test conditions
Min.
Typ. Max. Unit
I = -50 mA
V
= -5 V
CE
C
f
Transition frequency
100
MHz
t
f = 50 MHz
Resistive load
Delay time
Rise time
t
I = -3 A
V
= -20 V
CC
180
160
250
80
220
210
300
100
ns
ns
ns
ns
d
C
t
I
= -I = -60 mA
B2
r
B1
t
Storage time
Fall time
see Figure 8
s
t
f
1. Pulse duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation Figure 5.
voltage
Base-emitter saturation
voltage
4/9
STN790A
Electrical characteristics
Figure 6.
Switching time resistive load Figure 7.
Switching time resistive load
2.2
Test circuit
Figure 8.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
5/9
Package mechanical data
STN790A
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
6/9
STN790A
Package mechanical data
SOT-223 mechanical data
mm.
typ
DIM.
min.
max.
1.80
0.1
A
A1
B
0.02
0.60
2.90
0.24
6.30
0.70
3.00
0.26
6.50
2.30
4.60
3.50
7.00
0.85
3.15
0.35
6.70
B1
c
D
e
e1
E
3.30
3.70
7.30
H
6.70
o
V
10
0046067_L
7/9
Revision history
STN790A
4
Revision history
Table 5.
Date
Document revision history
Revision
Changes
24-Mar-2006
26-Jun-2008
3
4
Updated to new template
Updated SOT-223 mechanical data.
8/9
STN790A
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