STN790A_08 [STMICROELECTRONICS]

Medium current, high performance, low voltage PNP transistor; 中等电流,高性能,低电压PNP晶体管
STN790A_08
型号: STN790A_08
厂家: ST    ST
描述:

Medium current, high performance, low voltage PNP transistor
中等电流,高性能,低电压PNP晶体管

晶体 晶体管
文件: 总9页 (文件大小:183K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STN790A  
Medium current, high performance, low voltage PNP transistor  
Features  
Very low collector to emitter saturation voltage  
DC current gain, h >100  
FE  
4
3 A continuous collector current  
40 V breakdown voltage V  
(BR)CER  
3
SOT-223 plastic package for surface mounting  
2
circuits in tape and reel packing  
1
SOT-223  
Applications  
Power management in portable equipment  
Voltage regulation in bias supply circuits  
Switching regulator in battery charger  
Figure 1.  
Internal schematic diagram  
applications  
Heavy load driver  
Description  
The device in manufactured in low voltage PNP  
planar technology by using a “Base Island” layout.  
The resulting transistor shows exceptional high  
gain performance coupled with very low  
saturation voltage.  
Table 1.  
Order code  
STN790A  
Device summary  
Marking  
Package  
Packaging  
N790A  
SOT-223  
Tape and reel  
June 2008  
Rev 4  
1/9  
www.st.com  
9
Electrical ratings  
STN790A  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
Collector-base voltage (I = 0)  
-40  
-40  
V
V
CBO  
E
V
Collector-emitter voltage (R = 47 )  
CER  
BE  
V
Collector-emitter voltage (I = 0)  
-30  
V
CEO  
B
V
Emitter-base voltage (I = 0)  
-5  
V
EBO  
C
I
Collector current  
-3  
A
C
I
Collector peak current (t < 5 ms)  
-6  
A
CM  
P
P
Total dissipation at T  
= 25 °C  
1.6  
W
°C  
°C  
tot  
amb  
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
(1)  
R
78  
°C/W  
Thermal resistance junction-ambient  
__max  
thj-amb  
1. Device mounted on PCB area of 1 cm2.  
2/9  
STN790A  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25 °C unless otherwise specified)  
case  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
Min.  
Typ. Max. Unit  
V
V
= -30 V  
Collector cut-off current  
-10  
µA  
µA  
CB  
CB  
I
CBO  
EBO  
(I = 0)  
= -30 V; T = 100 °C  
-100  
E
C
Emitter cut-off current  
I
V
= -4 V  
-10  
µA  
V
EB  
(I = 0)  
C
Collector-emitter  
breakdown voltage  
(1)  
(1)  
I = -10 mA  
-30  
-40  
V
V
C
(BR)CEO  
(I = 0)  
B
Collector-emitter  
breakdown voltage  
I = -10 mA  
V
C
(BR)CER  
(R = 47 )  
BE  
Collector-base  
breakdown voltage  
V
V
I = -100 µA  
-40  
-5  
V
V
(BR)CBO  
C
(I = 0)  
E
Emitter-base breakdown  
I = -100 µA  
(BR)EBO  
E
voltage (I = 0)  
C
I = -0.5 A  
I = -5 mA  
-0.15  
-0.25  
-0.5  
V
V
V
V
C
B
I = -1.2 A  
I = -20 mA  
C
B
Collector-emitter  
saturation voltage  
(1)  
I = -2 A  
I = -20 mA  
V
C
B
CE(sat)  
-0.7  
I = -3 A  
I = -100 mA  
B
C
I = -3 A  
I = -100 mA  
C
B
-0.9  
-1  
V
V
V
T = 100 °C  
J
Base-emitter saturation  
voltage  
(1)  
(1)  
I = -1 A  
I = -10 mA  
-0.8  
-0.8  
V
C
B
BE(sat)  
I = -1 A  
V
= -2 V  
Base-emitter on voltage  
-1  
V
C
CE  
BE(on)  
I = -10 mA  
V
V
= -2 V  
= -2 V  
= -2 V  
= -1 V  
= -1 V  
100  
100  
100  
100  
90  
200  
200  
400  
400  
C
CE  
CE  
I = -500 mA  
C
(1)  
I = -1 A  
V
DC current gain  
h
C
CE  
CE  
CE  
FE  
I = -2 A  
V
160  
130  
C
I = -3 A  
V
C
3/9  
Electrical characteristics  
STN790A  
Table 4.  
Symbol  
Electrical characteristics (continued)  
Parameter  
Test conditions  
Min.  
Typ. Max. Unit  
I = -50 mA  
V
= -5 V  
CE  
C
f
Transition frequency  
100  
MHz  
t
f = 50 MHz  
Resistive load  
Delay time  
Rise time  
t
I = -3 A  
V
= -20 V  
CC  
180  
160  
250  
80  
220  
210  
300  
100  
ns  
ns  
ns  
ns  
d
C
t
I
= -I = -60 mA  
B2  
r
B1  
t
Storage time  
Fall time  
see Figure 8  
s
t
f
1. Pulse duration = 300 µs, duty cycle 1.5%  
2.1  
Electrical characteristics (curves)  
Figure 2.  
DC current gain  
Figure 3.  
DC current gain  
Figure 4.  
Collector-emitter saturation Figure 5.  
voltage  
Base-emitter saturation  
voltage  
4/9  
STN790A  
Electrical characteristics  
Figure 6.  
Switching time resistive load Figure 7.  
Switching time resistive load  
2.2  
Test circuit  
Figure 8.  
Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
5/9  
Package mechanical data  
STN790A  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
6/9  
STN790A  
Package mechanical data  
SOT-223 mechanical data  
mm.  
typ  
DIM.  
min.  
max.  
1.80  
0.1  
A
A1  
B
0.02  
0.60  
2.90  
0.24  
6.30  
0.70  
3.00  
0.26  
6.50  
2.30  
4.60  
3.50  
7.00  
0.85  
3.15  
0.35  
6.70  
B1  
c
D
e
e1  
E
3.30  
3.70  
7.30  
H
6.70  
o
V
10  
0046067_L  
7/9  
Revision history  
STN790A  
4
Revision history  
Table 5.  
Date  
Document revision history  
Revision  
Changes  
24-Mar-2006  
26-Jun-2008  
3
4
Updated to new template  
Updated SOT-223 mechanical data.  
8/9  
STN790A  
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9/9  

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