STP11N52K3 [STMICROELECTRONICS]
N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET; N沟道525 V， 0.41欧姆， 10 A SuperMESH3功率MOSFET
| 型号： | STP11N52K3 |
| 厂家： | 
ST |
| 描述： | N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET |
| 文件： | 总20页 (文件大小：1160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB11N52K3, STF11N52K3
STP11N52K3
N-channel 525 V, 0.41 Ω, 10 A SuperMESH3™ Power MOSFET
in D²PAK,TO-220FP and TO-220 packages
Datasheet — production data
Features
TAB
RDS(on)
max.
Order codes
VDSS
ID
Pw
3
3
STB11N52K3
125 W
2
2
1
1
STF11N52K3 525 V
STP11N52K3
< 0.51 Ω
10 A 30 W
125 W
TO-220
TO-220FP
TAB
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
3
1
D²PAK
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Figure 1.
Internal schematic diagram
D(2,TAB)
Applications
■ Switching applications
Description
G(1)
These devices are N-channel Power MOSFETs
made using the SuperMESH3™ technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting transistor has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Packages
Packaging
STB11N52K3
STF11N52K3
STP11N52K3
D²PAK
TO-220FP
TO-220
Tape and reel
Tube
11N52K3
Tube
March 2012
Doc ID 018868 Rev 2
1/20
This is information on a product in full production.
www.st.com
20
Contents
STB11N52K3, STF11N52K3, STP11N52K3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220, D²PAK
525
30
TO-220FP
VDS
VGS
ID
Drain- source voltage
V
V
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
10
6
10 (1)
6 (1)
40 (1)
30
A
A
ID
(2)
IDM
40
125
A
PTOT
IAR
Total dissipation at TC = 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
5
A
Single pulse avalanche energy
EAS
170
mJ
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
dv/dt(3) Peak diode recovery voltage slope
VESD(G-S)
2500
12
V
V/ns
Insulation withstand voltage (RMS) from all
VISO
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
TJ
Operating junction temperature
Storage temperature
- 55 to 150
°C
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
I
≤ 10 A, di/dt ≤ 400 A/µs, V = 80% V
DD (BR)DSS
SD
Table 3.
Symbol
Thermal data
Parameter
Value
TO-220FP
4.17
Unit
TO-220
D²PAK
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb Thermal resistance junction-pcb max
1
1
°C/W
°C/W
°C/W
62.50
30
Maximum lead temperature for soldering
purpose
TJ
300
°C/W
Doc ID 018868 Rev 2
3/20
Electrical characteristics
STB11N52K3, STF11N52K3, STP11N52K3
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
VDS = 525 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
525
V
Zero gate voltage
1
µA
µA
IDSS
drain current (VGS = 0) VDS = 525 V, TC=125 °C
50
Gate-body leakage
IGSS
VGS
=
20 V; VDS=0
10
µA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
3
3.75
0.41
4.5
VGS = 10 V, ID = 5 A
0.51
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
1400
110
22
pF
V
V
DS = 50 V, f = 1 MHz,
GS = 0
-
-
pF
pF
Reverse transfer
capacitance
Equivalent output
capacitance
(1)
Coss eq.
VDS = 0 to 420 V, VGS = 0
-
83
3
-
pF
Rg
Gate input resistance f=1 MHz open drain
1
7
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 420 V, ID = 10 A,
GS = 10 V
(see Figure 18)
51
8
nC
nC
nC
V
-
-
32
1.
C
is defined as a constant equivalent capacitance giving the same charging time as C
when V
DS
oss eq.
oss
increases from 0 to 80% V
DS
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min. Typ. Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
7
ns
ns
ns
ns
VDD = 210 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
18
-
-
Turn-off-delay time
Fall time
281
42
4/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Electrical characteristics
Min. Typ. Max Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
10
40
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 10 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD= 60 V
270
2700
20
ns
nC
A
Qrr
-
-
IRRM
(see Figure 19)
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 19)
320
3400
22
ns
nC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
30
Gate-source breakdown
voltage
BVGSO
Igs= 1 mA (open drain)
-
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 018868 Rev 2
5/20
Electrical characteristics
STB11N52K3, STF11N52K3, STP11N52K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK
AM09112v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1ms
1
10ms
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
AM09113v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1ms
1
10ms
0.1
0.01
10
VDS(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
AM09114v1
AM09115v1
I
D
(A)
I
D
(A)
VDS=15V
VGS=10V
20
20
15
10
7V
15
10
5
6V
5
0
5V
0
0
9
VGS(V)
8
6
7
1
3
4
5
5
2
20
25
V
DS(V)
0
10
15
6/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Static drain-source on resistance
AM09116v1
AM09117v1
V
(V)
GS
DS(on) (Ω)
0.54
R
VDS
V
GS=10V
V
DD=420V
400
12
10
8
ID=10A
0.52
350
0.50
0.48
0.46
0.44
0.42
300
250
200
6
150
100
4
2
0
0.40
50
0
0.38
0.36
4
6
10
12
2
8
20
40
60
Qg
(nC)
ID(A)
0
0
Figure 10. Capacitance variations
Figure 11. Output capacitance stored energy
AM09118v1
AM09119v1
C
(pF)
Eoss (µJ)
6
1000
100
5
4
3
2
Ciss
Coss
Crss
10
1
1
0
500
0.1
100
200
400
1
10
V
DS(V)
0
100
300
VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
AM09120v1
AM09121v1
V
GS(th)
(norm)
R
DS(on)
(norm)
ID=1.2A
1.10
1.00
0.90
2.5
2.0
1.5
1.0
0.80
0.5
0.0
0.70
-75
-50
-25
-25
25
75
T
J(°C)
0
25 50 75
TJ(°C)
125
100
Doc ID 018868 Rev 2
7/20
Electrical characteristics
STB11N52K3, STF11N52K3, STP11N52K3
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
AM09123v1
AM09122v1
BVDSS
SD (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
(norm)
TJ=-50°C
TJ=25°C
1.10
TJ=150°C
1.05
1.00
0.95
0.90
0.1
0
0
-75
1
2
3
4
5
I
SD(A)
-25
25
75
TJ(°C)
125
Figure 16. Maximum avalanche energy vs
starting Tj
AM09124v1
EAS
(mJ)
I
D
=5 A
180
160
140
120
100
80
V
DD=50 V
60
40
20
0
0
20
40
60
80 100
120
140 T
J(°C)
8/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Test circuits
3
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
ton
tdon
toff
tdoff
V(BR)DSS
tr
tf
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 018868 Rev 2
9/20
Package mechanical data
STB11N52K3, STF11N52K3, STP11N52K3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
mm
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Doc ID 018868 Rev 2
11/20
Package mechanical data
Figure 23. TO-220FP drawing
STB11N52K3, STF11N52K3, STP11N52K3
7012510_Rev_K_B
12/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Package mechanical data
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
Doc ID 018868 Rev 2
13/20
Package mechanical data
Figure 24. TO-220 type A drawing
STB11N52K3, STF11N52K3, STP11N52K3
0015988_typeA_Rev_S
14/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Package mechanical data
Table 11. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
Doc ID 018868 Rev 2
15/20
Package mechanical data
Figure 25. D²PAK (TO-263) drawing
STB11N52K3, STF11N52K3, STP11N52K3
0079457_T
Figure 26. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
16/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Package mechanical data
5
Package mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
Doc ID 018868 Rev 2
17/20
Package mechanical data
STB11N52K3, STF11N52K3, STP11N52K3
Figure 27. Tape for D²PAK (TO-263)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 28. Reel for D²PAK (TO-263)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
18/20
Doc ID 018868 Rev 2
STB11N52K3, STF11N52K3, STP11N52K3
Revision history
6
Revision history
Table 13. Document revision history
Date
Revision
Changes
20-May-2011
1
First release.
Inserted max and min. values for RG in Table 5.
Updated Section 4: Package mechanical data.
27-Mar-2012
2
Doc ID 018868 Rev 2
19/20
STB11N52K3, STF11N52K3, STP11N52K3
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20/20
Doc ID 018868 Rev 2
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