STP19NM65N [STMICROELECTRONICS]

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET; N沟道650 V - 0.25 Ω - 15.5 - TO- 220 / FP -D2 / I2PAK - TO-247第二代的MDmesh ™功率MOSFET
STP19NM65N
型号: STP19NM65N
厂家: ST    ST
描述:

N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
N沟道650 V - 0.25 Ω - 15.5 - TO- 220 / FP -D2 / I2PAK - TO-247第二代的MDmesh ™功率MOSFET

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STF19NM65N-STI19NM65N-STW19NM65N  
STB19NM65N - STP19NM65N  
N-channel 650 V - 0.25 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247  
second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax  
Type  
RDS(on) max  
ID  
)
3
2
3
1
2
1
STB19NM65N  
STF19NM65N  
STI19NM65N  
STP19NM65N  
STW19NM65N  
710 V  
710 V  
710 V  
710 V  
710 V  
< 0.27  
< 0.27 Ω  
< 0.27 Ω  
< 0.27 Ω  
< 0.27 Ω  
15.5 A  
15.5 A(1)  
15.5 A  
PAK  
TO-220  
3
2
1
15.5 A  
TO-220FP  
15.5 A  
3
1. Limited only by maximum temperature allowed  
1
3
2
1
100% avalanche tested  
PAK  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices implements the second  
generation of MDmesh™ Technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the Company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STI19NM65N  
STF19NM65N  
STP19NM65N  
19NM65N  
19NM65N  
19NM65N  
19NM65N  
19NM65N  
Tube  
Tube  
TO-220FP  
TO-220  
PAK  
Tube  
STB19NM65NT4  
STW19NM65N  
Tape and reel  
Tube  
TO-247  
February 2008  
Rev 1  
1/19  
www.st.com  
19  
Contents  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
2/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Value  
Parameter  
Unit  
TO-220/I²PAK  
PAK/TO-247  
TO-220FP  
VDS  
VGS  
ID  
Drain-source voltage (VGS=0)  
650  
25  
V
V
A
A
Gate-source voltage  
15.5(1)  
10(1)  
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
15.5  
ID  
10  
(2)  
62(1)  
35  
Drain current (pulsed)  
62  
150  
15  
A
W
IDM  
PTOT  
dv/dt (3)  
VISO  
Total dissipation at TC = 25 °C  
Peak diode recovery voltage slope  
V/ns  
Insulation withstand voltage (RMS) from all three  
leads to external heat sink (t=1 s;TC=25 °C)  
--  
2500  
V
Tstg  
Tj  
Storage temperature  
-55 to 150  
150  
°C  
°C  
Max. operating junction temperature  
1. Limited only by maximum temperature allowed  
2. Pulse width limited by safe operating area  
3. ISD 15.5 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
TO-220 I²PAK D²PAK TO-247 TO-220FP  
Unit  
Thermal resistance junction-  
case Max  
Rthj-case  
Rthj-amb  
Rthj-pcb  
Tl  
0.83  
3.6  
62.5  
--  
°C/W  
°C/W  
°C/W  
°C  
Thermal resistance junction-  
amb Max  
62.5  
--  
50  
--  
Thermal resistance junction-  
pcb max  
--  
--  
30  
Maximum lead temperature for  
soldering purpose  
300  
3/19  
Electrical ratings  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Table 4.  
Symbol  
Avalanche characteristics  
Parameter  
Max value  
Unit  
Avalanche current, repetitive or not-repetitive  
(pulse width limited by Tj max)  
IAS  
4
A
Single pulse avalanche energy  
EAS  
400  
mJ  
(starting Tj=25 °C, ID= IAS, VDD= 50 V)  
4/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Electrical characteristics  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 5.  
Symbol  
On/off states  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Drain-source  
V(BR)DSS  
ID = 1 mA, VGS = 0  
650  
V
breakdown voltage  
V
DD= 520 V, ID=15.5 A,  
dv/dt (1) Drain source voltage slope  
30  
V/ns  
VGS=10 V  
Zero gate voltage  
IDSS  
V
DS = Max rating  
1
µA  
µA  
drain current (VGS = 0)  
VDS = Max rating, @125 °C  
100  
Gate-body leakage  
IGSS  
VGS  
VDS = VGS, ID = 250 µA  
GS = 10 V, ID = 7.75 A  
=
20 V  
100  
4
nA  
V
current (VDS = 0)  
VGS(th) Gate threshold voltage  
2
3
Static drain-source on  
resistance  
RDS(on)  
V
0.25 0.27  
1. Characteristics value at turn off on inductive load  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
(1)  
gfs  
Forward transconductance VDS=15 V I =7.75 A  
15  
S
, D  
Input capacitance  
Ciss  
Coss  
Crss  
1900  
110  
10  
pF  
pF  
pF  
VDS = 50 V, f = 1 MHz,  
VGS = 0  
Output capacitance  
Reverse transfer  
capacitance  
VGS = 0 ,  
Equivalent output  
capacitance  
(2)  
Coss eq.  
230  
pF  
V
DS = 0 to 520 V  
VDD = 520 V, ID = 15.5 A,  
GS = 10 V,  
(see Figure 19)  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
55  
9
nC  
nC  
nC  
V
30  
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
5/19  
Electrical characteristics  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Table 7.  
Symbol  
Switching times  
Parameter  
Turn-on delay time  
Test conditions  
Min Typ Max Unit  
td(on)  
tr  
td(off)  
tf  
25  
8
ns  
ns  
ns  
ns  
VDD =325 V, ID = 7.75 A  
RG = 4.7 VGS = 10 V  
(see Figure 18)  
Rise time  
Turn-off delay time  
Fall time  
80  
26  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min Typ Max Unit  
ISD  
Source-drain current  
15.5  
62  
A
A
(1)  
ISDM  
Source-drain current (pulsed)  
(2)  
VSD  
Forward on voltage  
ISD = 15.5 A, VGS = 0  
1.3  
V
ISD = 15.5 A,  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
460  
6
ns  
µC  
A
di/dt = 100 A/µs  
VDD = 100 V, Tj = 25 °C  
(see Figure 20)  
Qrr  
IRRM  
27  
ISD = 15.5 A,  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
600  
8
ns  
µC  
A
di/dt = 100 A/µs  
VDD = 100 V, Tj = 150°C  
(see Figure 20)  
Qrr  
IRRM  
27  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
6/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Electrical characteristics  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area for TO-220 -  
Figure 3. Thermal impedance for TO-220 -  
2
2
2
2
D PAK - I PAK  
D PAK - I PAK  
Figure 4. Safe operating area for TO-220FP  
Figure 5. Thermal impedance for TO-220FP  
Figure 6. Safe operating area for TO-247  
Figure 7. Thermal impedance for TO-247  
7/19  
Electrical characteristics  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Figure 9. Transfer characteristics  
Figure 8. Output characteristics  
Figure 10. Transconductance  
Figure 11. Static drain-source on resistance  
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations  
8/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Electrical characteristics  
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs  
vs temperature  
temperature  
Figure 16. Source-drain diode forward  
characteristics  
Figure 17. Normalized B  
vs temperature  
VDSS  
9/19  
Test circuit  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
3
Test circuit  
Figure 18. Switching times test circuit for  
resistive load  
Figure 19. Gate charge test circuit  
Figure 20. Test circuit for inductive load  
switching and diode recovery times  
Figure 21. Unclamped Inductive load test  
circuit  
Figure 22. Unclamped inductive waveform  
Figure 23. Switching time waveform  
10/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
11/19  
Package mechanical data  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
TO-220 mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
A
b
4.40  
0.61  
1.14  
0.49  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
12/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Package mechanical data  
TO-220FP mechanical data  
mm.  
TYP  
inch  
DIM.  
MIN.  
4.4  
MAX.  
4.6  
2.7  
2.75  
0.7  
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
TYP.  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
1
F1  
F2  
G
1.7  
1.7  
5.2  
G1  
H
2.7  
10  
10.4  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1
2 3  
L5  
L2  
L4  
13/19  
Package mechanical data  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
PAK (TO-263) mechanical data  
mm  
Typ  
inch  
Typ  
Dim  
Min  
Max  
Min  
Max  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
0.173  
0.001  
0.027  
0.045  
0.017  
0.048  
0.352  
0.295  
0.394  
0.334  
0.181  
0.009  
0.037  
0.067  
0.024  
0.053  
0.368  
b2  
c
c2  
D
D1  
E
10.40  
0.409  
E1  
e
8.50  
2.54  
0.1  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
0.192  
0.590  
0.099  
0.090  
0.05  
0.208  
0.624  
0.106  
0.110  
0.055  
0.069  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.051  
0.4  
0.016  
V2  
0°  
8°  
0°  
8°  
0079457_M  
14/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Package mechanical data  
TO-262 mechanical data  
mm  
Typ  
inch  
Dim  
Min  
Max  
Min  
Typ  
Max  
A
A1  
b
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.194  
0.393  
0.511  
0.137  
0.050  
0.181  
0.107  
0.034  
0.066  
0.027  
0.052  
0.368  
0.106  
0.202  
0.410  
0.551  
0.154  
0.055  
b1  
c
c2  
D
e
e1  
E
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
15/19  
Package mechanical data  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
TO-247 Mechanical data  
mm.  
Dim.  
Min.  
Typ  
Max.  
A
A1  
b
4.85  
5.15  
2.20  
1.0  
2.60  
1.40  
2.40  
3.40  
b1  
b2  
c
2.0  
3.0  
0.40  
19.85  
15.45  
0.80  
D
20.15  
15.75  
E
e
5.45  
18.50  
5.50  
L
14.20  
14.80  
4.30  
L1  
L2  
øP  
øR  
S
3.70  
3.55  
3.65  
4.50  
5.50  
16/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
Packaging mechanical data  
5
Packaging mechanical data  
2
D PAK FOOTPRINT  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
24.4  
100  
0.059  
13.2 0.504 0.520  
0795  
26.4 0.960 1.039  
3.937  
30.4  
1.197  
BASE QTY  
BULK QTY  
1000  
TAPE MECHANICAL DATA  
1000  
mm  
inch  
DIM.  
MIN. MAX. MIN. MAX.  
10.5 10.7 0.413 0.421  
15.7 15.9 0.618 0.626  
A0  
B0  
D
1.5  
1.6 0.059 0.063  
D1  
E
1.59 1.61 0.062 0.063  
1.65 1.85 0.065 0.073  
F
11.4  
4.8  
3.9  
11.9  
1.9  
50  
11.6 0.449 0.456  
5.0 0.189 0.197  
4.1 0.153 0.161  
12.1 0.468 0.476  
2.1 0.075 0.082  
1.574  
K0  
P0  
P1  
P2  
R
T
0.25 0.35 0.0098 0.0137  
23.7 24.3 0.933 0.956  
W
* on sales type  
17/19  
Revision history  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
6
Revision history  
Table 9.  
Date  
14-Feb-2008  
Document revision history  
Revision  
Changes  
1
First release  
18/19  
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N  
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19/19  

相关型号:

STP1N120

channel 1200V - 30ヘ - 500mA - TO-220 Zener - protected SuperMESH⑩ Power MOSFET
STMICROELECTR

STP2000QFP

I/O Controller
ETC

STP2001QFP

I/O Controller
ETC

STP2002QFP

I/O Controller
ETC

STP2003PQFP

Peripheral IC
ETC

STP2003QFP

LAN Node Controller
ETC

STP200N12F7

Power Field-Effect Transistor
STMICROELECTR

STP200N4F3

N-channel 40V - 0.0035ヘ - 120A - D2PAK - TO-220 planar STripFET⑩ Power MOSFET
STMICROELECTR

STP200N6F3

120A, 60V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
STMICROELECTR

STP200NF03

N-CHANNEL 30V - 0.0032 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET
STMICROELECTR

STP200NF04

N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET
STMICROELECTR

STP200NF04L

N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET
STMICROELECTR