STP22NF03L [STMICROELECTRONICS]
N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFET⑩ POWER MOSFET; N沟道30V - 0.038ohm - 22A TO- 220 STripFET⑩功率MOSFET
| 型号： | STP22NF03L |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFET⑩ POWER MOSFET |
| 文件： | 总8页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP22NF03L
N-CHANNEL 30V - 0.038Ω - 22A TO-220
STripFET™ POWER MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP22NF03L
30V
<0.05Ω
22A
■
■
■
■
TYPICAL R (on) = 0.038Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE AT 100°C
APPLICATION ORIENTED CHARACTERIZATION
3
2
1
TO-220
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
■
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
Drain-source Voltage (V = 0)
30
30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
±15
22
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
16
A
D
C
I
(●)
Drain Current (pulsed)
88
A
DM
P
TOT
Total Dissipation at T = 25°C
45
W
C
Derating Factor
0.3
W/°C
V/ns
mJ
°C
°C
dv/dt (1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
6
E
AS
(2)
200
–65 to 175
175
T
stg
T
Max. Operating Junction Temperature
j
(●) Pulse width limited by safe operating area
(1) I ≤10A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(2) Starting T =25°C, I =11A, V =15V
j
D
DD
Aug 2000
1/8
STP22NF03L
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
3.33
62.5
300
°C/W
°C/W
°C
Rthj-amb
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
30
V
(BR)DSS
GS
V
V
= Max Rating
1
µA
µA
DS
Zero Gate Voltage
I
I
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
Gate-body Leakage
V
= ±20V
±100
nA
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
GS(th)
V
V
V
= V , I = 250µA
Gate Threshold Voltage
1
DS
GS
GS
GS
D
= 10V, I = 11 A
0.038
0.045
0.05
0.06
Ω
D
Static Drain-source On
Resistance
R
DS(on)
D(on)
= 5 V, I = 11 A
D
V
V
> I
x R
DS
D(on) DS(on)max,
I
On State Drain Current
22
A
= 10V
GS
DYNAMIC
Symbol
Parameter
Test Conditions
> I x R
D(on)
=11A
Min.
Typ.
Max.
Unit
V
DS
DS(on)max,
g
fs
(1)
Forward Transconductance
7
S
I
D
C
C
Input Capacitance
Output Capacitance
330
90
pF
pF
iss
oss
V
DS
= 25V, f = 1 MHz, V = 0
GS
Reverse Transfer
Capacitance
C
rss
40
pF
2/8
STP22NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 15V, I = 11A
Turn-on Delay Time
11
ns
d(on)
DD
D
= 4.7Ω V = 4.5V
G
GS
t
Rise Time
100
6.5
ns
r
(see test circuit, Figure 3)
V
V
= 24V, I = 22A,
DD
D
Q
Total Gate Charge
9
nC
g
= 10V
GS
Q
Gate-Source Charge
Gate-Drain Charge
3.6
2
nC
nC
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 15V, I = 11A,
D
t
Turn-off-Delay Time
R
G
= 4.7Ω, V = 4.5V
25
ns
d(off)
GS
(see test circuit, Figure 3)
t
Fall Time
22
22
ns
ns
f
Vclamp =24V, I =22A
D
t
Off-voltage Rise Time
r(off)
R
G
= 4.7Ω, V = 4.5V
GS
t
Fall Time
(see test circuit, Figure 5)
55
75
ns
ns
f
t
Cross-over Time
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
22
Unit
A
I
Source-drain Current
SD
I
(1)
(2)
Source-drain Current (pulsed)
Forward On Voltage
88
A
SDM
V
I
I
= 22A, V = 0
1.5
V
SD
SD
GS
= 22A, di/dt = 100A/µs,
= 15V, T = 150°C
SD
t
rr
Reverse Recovery Time
V
30
ns
DD
j
(see test circuit, Figure 5)
Q
Reverse Recovery Charge
Reverse Recovery Current
18
nC
A
rr
I
1.2
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/8
STP22NF03L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STP22NF03L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STP22NF03L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STP22NF03L
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/8
STP22NF03L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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