STP8NM60FP [STMICROELECTRONICS]
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh⑩ Power MOSFET; N沟道600V - 0.9ohm - 8A TO- 220 / TO- 220FP / DPAK / IPAK MDmesh⑩功率MOSFET
| 型号： | STP8NM60FP |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh⑩ Power MOSFET |
| 文件： | 总13页 (文件大小：604K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP8NM60, STP8NM60FP
STD5NM60, STD5NM60-1
N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK
MDmesh™ Power MOSFET
TYPE
V
DSS
R
I
D
Pw
DS(on)
STP8NM60
STP8NM60FP
STD5NM60
STD5NM60-1
600 V
600 V
600 V
600 V
< 1 Ω
< 1 Ω
< 1 Ω
< 1 Ω
8 A
8 A(*)
5 A
100 W
30 W
96 W
96 W
5 A
3
2
TO-220F1P
■
■
■
■
TYPICAL R (on) = 0.9Ω
DS
TO-220
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
3
3
2
■
LOW GATE INPUT RESISTANCE
1
1
DPAK
TO-252
IPAK
TO-251
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
MARKING
P8NM60
PACKAGE
PACKAGING
TUBE
STP8NM60
TO-220
TO-220FP
DPAK
STP8NM60FP
STD5NM60T4
STD5NM60-1
P8NM60FP
D5NM60
TUBE
TAPE & REEL
TUBE
D5NM60
IPAK
August 2003
1/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STD5NM60
STD5NM60-1
STP8NM60
STP8NM60FP
V
Drain-source Voltage (V = 0)
600
600
± 30
8 (*)
5 (*)
32 (*)
30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
8
5
5
A
D
C
I
Drain Current (continuous) at T = 100°C
3.1
20
96
0.4
15
-
A
D
C
I
( )
Drain Current (pulsed)
32
100
0.8
15
-
A
DM
P
TOT
Total Dissipation at T = 25°C
W
C
Derating Factor
0.24
15
W/°C
V/ns
V
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
V
ISO
2500
T
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤5A, di/dt ≤400A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
THERMAL DATA
DPAK
IPAK
TO-220
1.25
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
4.16
62.5
300
1.3
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
T
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
2.5
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
200
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
600
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
DS
1
10
µA
µA
DSS
Drain Current (V = 0)
= Max Rating, T = 125 °C
GS
DS
C
I
Gate-body Leakage
V
= ± 30V
±100
nA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 250µA
Gate Threshold Voltage
3
4
5
1
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 2.5 A
0.9
Ω
DS(on)
D
2/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
= I
2.4
S
fs
DS
D(on)
I
= 2.5A
D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
440
100
10
pF
pF
pF
iss
DS
GS
C
oss
C
rss
C
(2) Equivalent Output
Capacitance
V
= 0V, V = 0V to 480V
50
4
pF
oss eq.
GS
DS
R
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Ω
G
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 300 V, I = 2.5 A
= 4.7Ω V = 10 V
GS
14
10
ns
ns
d(on)
DD
D
t
r
G
(Resistive Load see, Figure 3)
Q
Q
Q
V
V
= 400V, I = 5 A,
= 10V
18
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
13
5
6
nC
nC
nC
g
DD
GS
D
gs
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
= 300 V, I = 2.5 A
23
10
ns
ns
d(off)
DD
D
t
f
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
t
V
R
= 480V, I = 5 A,
ns
ns
ns
Off-voltage Rise Time
Fall Time
Cross-over Time
7
10
17
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
8
32
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 5 A, V = 0
Forward On Voltage
1.5
V
SD
SD
SD
GS
t
= 5 A, di/dt = 100A/µs
= 100 V, T = 25°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
300
1950
13
ns
µC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
t
I
= 5 A, di/dt = 100A/µs
= 100 V, T = 150°C
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
SD
445
3005
13.5
ns
µC
A
Q
rr
RRM
V
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Safe Operating Area For TO-220
Thermal Impedance For TO-220
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Safe Operating Area For DPAK/IPAK
Thermal Impedance For DPAK/IPAK
4/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
6/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
10/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
11/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
12/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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© http://www.st.com
13/13
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