STP9NK80Z [STMICROELECTRONICS]
N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET; N沟道800V -0.9ohm - 7.5A TO- 220 / TO- 220FP齐纳保护超网MOSFET
| 型号： | STP9NK80Z |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET |
| 文件： | 总11页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP9NK80Z
STF9NK80Z
N-CHANNEL 800V -0.9Ω - 7.5A TO-220/TO-220FP
Zener-Protected SuperMESH™MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP9NK80Z
STF9NK80Z
800 V
800 V
<1.2 Ω 7.5 A 150 W
<1.2 Ω 7.5 A 35 W
■ TYPICAL R (on) = 0.9Ω
DS
■ EXTREMELY HIGH dv/dt CAPABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
3
■ GATE CHARGE MINIMIZED
2
1
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
TO-220FP
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES
■ SMPS
Table 2: Order Codes
SALES TYPE
STP9NK80Z
STF9NK80Z
MARKING
P9NK80Z
F9NK80Z
PACKAGE
TO-220
PACKAGING
TUBE
TO-220FP
TUBE
Rev. 1
May 2005
1/11
STP9NK80Z - STF9NK80Z
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
V
Drain-source Voltage (V = 0)
800
800
± 30
V
V
DS
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuous) at T = 25°C
7.5
4.7
7.5 (*)
4.7 (*)
30 (*)
35
A
D
C
I
D
Drain Current (continuous) at T = 100°C
A
C
I
( )
Drain Current (pulsed)
30
A
DM
P
Total Dissipation at T = 25°C
150
1.20
W
TOT
C
Derating Factor
0.28
W/°C
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
4000
4.5
ESD(G-S)
dv/dt (1)
V/ns
V
V
ISO
-
2500
T
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤7.5A, di/dt ≤200A/µs, V = 80% V
(BR)DSS
SD
DD
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.83
3.6
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
62.5
350
T
Maximum Lead Temperature For Soldering
Purpose
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
7.5
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
350
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
Table 6: Gate-Source Zener Diode
Symbol
BV
Parameter
Gate-Source
Breakdown Voltage
Test Conditions
Min.
30
Typ.
Max.
Unit
Igs=± 1mA (Open Drain)
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/11
STP9NK80Z - STF9NK80Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 1 mA, V = 0
800
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
Drain Current (V = 0)
GS
DS
C
I
Gate-body Leakage
V
GS
= ± 20V
±10
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 100µA
Gate Threshold Voltage
3
3.75
0.9
4.5
1.2
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 3.75 A
Ω
DS(on)
GS
D
Table 8: DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
= 15 V I = 3.75 A
7.5
S
DS
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
1900
180
38
pF
pF
pF
iss
DS
GS
C
oss
C
rss
C
(3) Equivalent Output
Capacitance
V
V
= 0V, V = 0V to 640V
75
pF
oss eq.
GS
DS
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
= 400 V, I = 3.75 A
26
19
58
18
ns
ns
ns
ns
DD
D
t
t
d(on)
R
= 4.7Ω V = 10 V
GS
G
t
r
(see Figure 19)
d(off)
t
f
t
V
R
= 640 V, I = 7.5A,
Off-voltage Rise Time
Fall Time
Cross-over Time
12
10
24
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
G
GS
t
(see Figure 20)
c
Q
V
V
= 640V, I = 7.5 A,
= 10V
60
12
35
84
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
nC
nC
nC
g
DD
D
Q
gs
Q
gd
GS
(see Figure 22)
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
7.5
30
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 7.5 A, V = 0
GS
Forward On Voltage
1.6
V
SD
SD
t
= 7.5 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
530
4.5
17
ns
µC
A
rr
SD
Q
V
= 35V, T = 25°C
rr
DD
j
I
(see Figure 20)
RRM
t
Q
I
V
= 7.5 A, di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
690
6.4
17
ns
µC
A
rr
SD
= 35V, T = 150°C
rr
DD
j
I
(see Figure 20)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/11
STP9NK80Z - STF9NK80Z
Figure 3: Safe Operating Area for TO-220
Figure 6: Thermal Impedance for TO-220
Figure 7: Thermal Impedance for TO-220FP
Figure 8: Transfer Characteristics
Figure 4: Safe Operating Area for TO-220FP
Figure 5: Output Characteristics
4/11
STP9NK80Z - STF9NK80Z
Figure 9: Transconductance
Figure 12: Static Drain-source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 14: Normalized BVDSS vs Temperature
5/11
STP9NK80Z - STF9NK80Z
Figure 15: Normalized On Resistance vs Tem-
peratureS
Figure 17: Source-Drain Diode Forward Char-
acteristics
Figure 16: Avalanche Energy vs Temperature
6/11
STP9NK80Z - STF9NK80Z
Figure 18: Unclamped Inductive Load Test Cir-
cuit
Figure 21: Unclamped Inductive Wafeform
Figure 19: Switching Times Test Circuit For
Resistive Load
Figure 22: Gate Charge Test Circuit
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/11
STP9NK80Z - STF9NK80Z
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
4.40
0.61
1.15
0.49
15.25
10
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/11
STP9NK80Z - STF9NK80Z
TO-220FP MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.4
TYP
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
TYP.
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
9/11
STP9NK80Z - STF9NK80Z
Table 10: Revision History
Date
Revision
Description of Changes
18-May-2005
1
First Release.
10/11
STP9NK80Z - STF9NK80Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
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11/11
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